Oxygen '96

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The following list of abstracts shows those provided before the conference began; there were some additional poster presentations given during the conference. However this list largely coincides with the contents of the proceedings to be published by Kluwers Academic Press. The exact list should be provided once the proceedings are published.

Talks:

1. Magnetic resonance investigations of thermal donors in silicon
   C. A. J. Ammerlaan
2. The role of trivalent oxygen in electrically active complexes
   P. Deák
3. Core structure of thermal donors in silicon
   J. Chadi
4. Hydrogen-oxygen interactions in silicon
   S. K. Estreicher
5. Theoretical studies of vacancy-oxygen and nitrogen-oxygen defects in silicon
   C. P. Ewels
6. Low temperature diffusion and agglomeration of oxygen in silicon
   U. Gösele
7. Oxygen-related luminescence centres created in Czochralski silicon
   E. C. Lightowlers and G. Davies
8. Infrared studies of the early stages of oxygen clustering in silicon
   J. L. Lindström
9. Effect of hydrogen on oxygen-related defect reaction in silicon at elevated temperatures
   V. P. Markevich
10. The initial stages of oxygen agglomeration in silicon: Dimers, hydrogen and self-interstitials
    R. C. Newman
11. Various configurations of isolated oxygen in semiconductors
    B. Pajot
12. Oxygen in Silicon - a very complex simple jump
    M. Ramamoorthy
13. Magnetic resonance on heat treatment centres in silicon
    J. -M. Spaeth
14. The electronic structure of the oxygen donor in Si from piezospectroscopy
    M. Stavola
15. Generation of thermal donors, nitrogen-oxygen complexes and hydrogen-oxygen pairs in Si
    M. Suezawa
16. Relation between grown-in defects and oxygen precipitates in Czochralski silicon
    K. Sumino
17. Properties of oxygen and oxygen-related defects in silicon determined from stress-induced alignment studies
    G. D. Watkins
18. Precipitation kinetics of oxygen and transition metals in silicon
    E. R. Weber
19. Passivation of thermal donors by atomic hydrogen
    J. Weber

Posters:

1. Oxygen and copper precipitation during thermal annealing of monocrystalline silicon
   D. Ballutaud
2. Uniaxial stress measurements on oxygen-implanted silicon: the 889 cm^-1 local mode
   B. Bech Neilsen
3. The nitrogen-pair oxygen defect in silicon
   F. Berg Rasmussen
4. Formation of thermal donors in czochralski grown silicon under hydrostatic pressure up to 1GPa
   V. V. Emtsev
5. Interaction of positrons with vacancy-oxygen complexes and oxygen clusters in Si
   M. Fujinami
6. Shallow donor complexes in silicon
   A. Gali and J. Miro
7. Molecular dynamics study of oxygen defects in silicon
   P. Grönberg and R. M. Nieminen
8. Luminescence investigations of the interaction of oxygen with dislocations in Cz Si
   V. Higgs
9. Computer simulation of defects distribution formed during CZ-si crystal growth
   L. Kawakami
10. Some properties of oxygen-related radiation induced defects in silicon and germanium
    L. Khirunenko
11. Defect profiling of oxygen related defects using a slow positron beam
    A. P. Knights
12. Beam rapid thermal oxidation of Si
    S. A. Korenev
13. An isochronal annealing study of the kinetics of VO and VO₂ defects in neutron irradiated Si
    C. A. Londos
14. Uniform stress effect on nucleation of oxygen precipitates in Czochralski grown silicon
    A. Misiuk
15. Injection enhanced reactions of interstitial defects in silicon
    B. Mukashev
16. Metastable interstitial silicon-interstitial oxygen complex in silicon
    B. Mukashev
17. Thermal double donors in silicon: a new insight into the problem
    L. I. Murin
18. Hydrogen plasma-assisted thermal double donor formation in silicon: effect of various parameters
    L. I. Murin
19. Complexes of oxygen and group II impurities in silicon
    M. O. Henry
20. Anomalous distribution of oxygen precipitates in a silicon wafer after anneal processes
    H. Ono
21. Carbon-hydrogen-oxygen(?) related centre responsible for the photoluminescence I-line (0.965 eV).
    A. N. Safanov
22. A kinetic model for precipitation of oxygen in Cz-Si
    S. Senkader
23. Influence of isovalent doping on the processes of thermal donors formation in silicon
    V. Shakhovtsov
24. Oxygen precipitation in MCz silicon: behaviour and dependence on the origin of raw material and growth conditions
    T. M. Tkacheva
25. Oxygen gettering and thermal donor formation at post-implantation annealing of silicon
    A. G. Ulyashin
26. On the impact of grown-in silicon oxide precipitate nuclei on silicon gate oxide integrity
    J. Vanhellemont
27. Low temperature annealing studies of the divacancy in p-type silicon
    J. Vanhellemont
28. Oxygen precipitation in annealed Cz. and FZ. silicon detected by S.I.R.M., F.T.I.R. and L.B.I.C.
    C. Veve and N. Gay
29. Atomic composition, structure and vibrational excitation of substitutional carbon-oxygen complexes in silicon
    H. Yamada-Kaneta

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Last modified: Sun Mar 17 15:54:25 1996 by JG