Oxygen '96
Early Stages of Oxygen Precipitation in Silicon
UNIFORM STRESS EFFECT ON NUCLEATION OF OXYGEN PRECIPITATES IN
CZOCHRALSKI GROWN SILICON
Andrezej Misiuk
Institute of Electron Technology, Al. Lotnikow 32/46, 02-668
Warszawa, POLAND
An effect of hydrostatic pressure, HP, of up to 1.1 Gpa on the
nucleation stage of oxygen precipitation in Czochralski grown silicon,
Cz-Si, was investigated. Cz-Si samples with the initial oxygen
interstitials concentration up to 1.8x1018 cm-3
were subjected to annealing under HP at 720-1000 K for up to 10 hours
in an argon ambient. After HP treatment the sample properties
were investigated by numerous FTIR, X-ray, electrical and other
methods. Additionally some samples were annealed at 1200-1400 K under
atmospheric pressure to check the effect of HP applied during the
nucleation stage on the oxygen precipitation stage.
Depending on
the initial oxygen concentration, the HP treatment enhances the rate
of creation of thermal donors (at about 620 K) and of new donors (at
about 870-920 K), the last being related to small oxygen clusters.
Also oxygen precipitation at 1200-1400 K is influenced by HP applied
during preannealing at 670-1000 K.
The observed phenomena are
discussed from the point of view of small oxygen cluster stabilisation
under HP, enhanced rate of oxygen interstitials diffusion and possible
sample contamination during HP processing.
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Last modified: Mon Feb 19 12:11:11 GMT 1996
JG
