Oxygen '96
Early Stages of Oxygen Precipitation in Silicon
THE ELECTRONIC STRUCTURE OF THE OXYGEN DONOR IN SI FROM
PIEZOSPECTROSCOPY
M. Stavola
Department of Physics, Lehigh University, Bethlehem, USA
The effect of uniaxial stress upon the helium-like electronic
transitions of the oxygen thermal donor in Si will be reviewed. The
stress-induced splittings of the electronic transitions are
characteristic of a defect with C2v symmetry and show that
the thermal donor has a ground state wave function that is constructed
from the pair of conduction band valleys that lies along the defect's
C2 axis. EPR measurements made under stress have led to
similar conclusions and the splittings of the thermal donor's DLTS
spectrum by stress are also explained by this model. Thus
piezospectroscopy serves to bring together the results of several
groups to provide a consistent picture of the oxygen donor's
effective-mass-like ground state.
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Last modified: Mon Feb 19 12:11:07 GMT 1996
JG
