Oxygen '96
Early Stages of Oxygen Precipitation in Silicon
OXYGEN AND COPPER PRECIPITATION DURING THERMAL ANNEALING OF
MONOCRYSTALLINE SILICON
D. Ballutaud
A. Correia, and A. Boutry-Forveille
CNRS / Laboratoire de Physique des Solides de Bellevue (LPSB), 1
place Aristide Briand F-92195 Meudon Cedex France
Oxygen precipitation in Cz silicon is analysed by Transmission
Electron Microscopy (TEM) and using the Electron Beam Induced Current
technique (EBIC), with the presence of copper or not.
Cz silicon
samples are oxidised in dry 18O (1000 degrees C, one hour).
TEM cross-section views exhibit point-like bulk defects to a density
of approximately 1015 cm-3, which are not detected in the
FZ silicon sample submitted to the same treatment. One of these
defects observed in the high resolution mode appears to be plate-like
shaped and lying in a {111} plane. Comparing oxygen concentration
(calculated from secondary ion mass spectrometry analysis and Fourier
transformed infrared analysis) and the particles density, a mean
number of 1000 oxygen atoms per precipitate is obtained.
The
diffusion lengths of the minority carriers are measured by the EBIC
technique in as-grown and oxidised Cz and FZ silicon, with copper
contamination or not. The electrical activity produced by
precipitation is then quantatively evaluated and allows us to assume
that the oxide based precipitates are surrounded by copper atoms,
situated at the particle-silicon interface and/or the highly strained
region in the nearby matrix.
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Last modified: Mon Feb 19 12:11:18 GMT 1996
JG
