Oxygen '96
Early Stages of Oxygen Precipitation in Silicon
HYDROGEN PLASMA-ASSISTED THERMAL DOUBLE DONOR FORMATION IN
SILICON: EFFECT OF VARIOUS PARAMETERS
V. P. Markevich (a),
L. I. Murin
(a),
Yu. A. Bumai (b),
and A. G. Ulyashin (b)
(a) nstitute of Solid State and Semiconductor Physics, Academy of
Sciences of Belarus, P.Brovki str. 17, Minsk 220072,
Belarus
(b) Belarussian State Polytechnical Academy, Minsk 220027, Belarus
Keywords: silicon, oxygen, hydrogen plasma treatment, thermal double
donors, depth profiles
Oxygen-related thermal double donor (TDD) formation at temperatures of
620-720 K under hydrogen plasma exposure has been investigated in
Czochralski-grown (Cz) silicon crystals with different oxygen
concentration and thermal pre-history. Concentration and depth
profiles for hydrogen-assisted TDD formation are analysed. It is found
that enhancement of TDD generation depends significantly on the
content of defects and impurities in Cz-Si crystals and H plasma
treatment conditions. Possible ways of hydrogen incorporation into the
crystals and mechanisms of hydrogen-enhanced TDD formation are
considered.
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Last modified: Mon Feb 19 12:11:10 GMT 1996
JG
