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Oxygen '96
Early Stages of Oxygen Precipitation in Silicon
SHALLOW DONOR COMPLEXES IN SILICON
A. Gali,
J. Miro and P. Deák
Department of Atomic Physics, Technical University of Budapest,
Budafoki ut. 8, H-1111 Budapest, Hungary.
Shallow thermal donors (STD) are electrically active oxygen-related
thermally formed defects observed in silicon after annealing between
300 and 600 degrees C. There are experimental indications that STD's
might be related to nitrogen. EPR studies find a C2v
symmetry for such defect. Recently, theoretical investigation on an
NO complex has shown that this structure is a shallow donor. We
discuss the possibility of adding an oxygen interstitial to the NO
complex. By using semi-empirical cyclic cluster model calculations,
two metastabile structures have been found. One of these has
C2v symmetry. These complexes are shallow donors as
well. The approximate spin distributions are reported for both of
them.
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Last modified: Mon Feb 19 12:11:15 GMT 1996
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