Oxygen '96
Early Stages of Oxygen Precipitation in Silicon
THERMAL DOUBLE DONORS IN SILICON: A NEW INSIGHT INTO THE
PROBLEM
L. I. Murin,
and V. P. Markevich
Institute of Solid State and Semiconductor Physics, Academy of
Sciences of Belarus, P.Brovki str. 17, Minsk 220072, Belarus
Keywords: silicon, oxygen, carbon, thermal double donors, generation
and annihilation kinetics, formation mechanism
The kinetics of thermal double donor (TDD) formation and annihilation
in Czochralski-grown silicon crystals with different oxygen and carbon
content have been investigated in a wide range of temperatures
(620-820 K). It is revealed that binding energies of TDDs and their
nuclei are functions of the oxygen and carbon concentrations. A new
explanation of the well-known dependences of the TDD formation rate on
the oxygen and carbon concentrations is given. The existing TDD
kinetics models are critically reviewed and a new mechanism of the
successive formation of the thermal double donor family is proposed.
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Last modified: Mon Feb 19 12:11:10 GMT 1996
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