Oxygen '96
Early Stages of Oxygen Precipitation in Silicon
AN ISOCHRONAL ANNEALING STUDY OF THE KINETICS OF VO AND
VO2 DEFECTS IN NEUTRON IRRADIATED Si
C. A. Londos,
N. V. Sarlis and L. G. Fytros
University of Athens, Department of Physics, Solid State Section
Panepistimiopolis, Zografos, Athens 157 84, GREECE
Keywords: silicon, oxygen, VO, VO2, kinetics
The infrared spectra of room-temperature neutron-irradiated
Czochralski-grown Si were investigated. During the anneal, the 827
cm-1 band of VO defect decreases and another band at 885
cm-1 of VO2 defect increases. The kinetics of
the evolution of these two defects was investigated. The decay of VO
is dominated by a second order reaction (VO + Sii ->
Oi) with an activation energy of 1.70 eV. The growth of
VO2 exhibits two stages. Below 360 degrees C, a first order
reaction (VO + Oi -> VO2) with an activation
energy of 1.46 eV is more likely to occur. Above 360 degrees C the
growth of VO2 seems to be correlated with mechanisms which
do not involve the VO centre. This behaviour may be explained in terms
of a mechanism that involves oxygen dimer formation.
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Last modified: Mon Feb 19 12:11:12 GMT 1996
JG
