Oxygen '96
Early Stages of Oxygen Precipitation in Silicon
A KINETIC MODEL FOR PRECIPITATION OF OXYGEN IN Cz-Si
S. Senkader
and G. Hobler
Institute of Solid-State Electronics, TU Vienna A-1040 Wien, AUSTRIA
Keywords: oxygen, silicon, precipitation, internal gettering.
We present a statistical model based on rate- and Fokker-Planck
equations to describe the precipitation of oxygen. In this way the
size distribution function, which is fundamental quantity for
describing growth- and dissolution processes of all precipitate sizes,
is calculated. The experimental observable quantities, like the
concentration of precipitated oxygen, the total density of
precipitates or the average precipitate radius, can be determined as
weighted sums of the size distribution function. The coefficients in
the resulting system of differential equations are related to one
another by phenomenological models through the free energy of an
individual oxygen precipitate. To compare the validity of the model,
we have carried out several simulations. The precipitation behaviour
during LO-HI (low temperature-high temperature), HI-LO-HI and
CMOS-type multi-step anneals, during which the coarsening phenomena
takes place, has been successfully simulated. Finally, the variations
of model parameters and the effect of processing parameters have been
studied.
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Last modified: Mon Feb 19 17:13:30 GMT 1996
JG
