Oxygen '96
Early Stages of Oxygen Precipitation in Silicon
DEFECT PROFILING OF OXYGEN RELATED DEFECTS USING A SLOW
POSITRON BEAM
A. P. Knights
and P. J. Simpson
University of Western Ontario, London, Ontario. Canada N6A 3K7
Variable energy positron annihilation spectroscopy (PAS) is a
relatively new technique for probing subsurface defects, and has
provided novel insights, particularly into silicon-based systems such
as SiO2/Si, silicon nitrides, SIMOX and ion-irradiated Si. The
technique entails the measurement of the Doppler broadening of
annihilation radiation from positrons implanted monoenergetically and
subsequently thermalised in the sample, which is in turn dependent on
their electronic environment. Positrons trapped by defects can thus be
distinguished from those in undefected material. By controlling the
incident positron energy, depth profiling of defects to several
microns can be achieved. The technique is described, together with a
study of defects induced by oxygen implantation, and the sensitivity
of the technique to the chemical environment of the defects is
demonstrated.
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Last modified: Thu Feb 22 10:40:59 GMT 1996
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