Oxygen '96
Early Stages of Oxygen Precipitation in Silicon
OXYGEN-RELATED LUMINESCENCE CENTRES CREATED IN CZOCHRALSKI
SILICON
E. C. Lightowlers and G. Davies
Physics Department, King's College London Strand, London WC2R 2LS,
UK.
Keywords: photoluminescence, oxygen, silicon, carbon, hydrogen.
A range of luminescence systems created in Czochralski (CZ) silicon
by thermal treatments, radiation damage with and without subsequent
thermal treatment, and indiffusion of various impurities, has been
reported as oxygen related. However, there is generally no direct
evidence that the centres responsible for these luminescence systems
actually contain oxygen, other than the fact that they are very weak
or not created in float-zone (FZ) silicon with a low oxygen
concentration. Many of the centres have been shown to contain carbon,
which can be released from its substitutional site by silicon self-
interstitials created by radiation damage, oxygen aggregation and
other processes. Some of the centres have been shown recently also to
contain hydrogen. A brief survey will be made of all the luminescence
systems, but with the major emphasis on those created by both short
and long thermal treatments of CZ Si with high and low carbon
concentrations, and the effects of deliberate hydrogen incorporation.
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Last modified: Wed Feb 28 19:00:06 GMT 1996
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