Oxygen '96
Early Stages of Oxygen Precipitation in Silicon
OXYGEN GETTERING AND THERMAL DONOR FORMATION AT
POST-IMPLANTATION ANNEALING OF SILICON
A. G. Ulyashin
(a)
Yu. A. Bumay (a),
A. I. Ivanov (a), V. S. Varichenko (b), A. M. Zaitsev
(b), N. M. Kazychits (b) and W. R. Fahrner (c)
(a) Belorussian State Polytechnical Academy, 65 Skarina ave.,
220027 Minsk, Belarus
(b) Belorussian State University, Minsk, Belarus
(c) University of Hagen, German
An effect of the oxygen gettering in buried layers formed by 160 keV
hydrogen and 210 MeV krypton ion implantation in Czochralski-grown
silicon has been investigated. Hydrogen and krypton have been
implanted at doses of 3x1016 cm2 and
3x1014 cm2 respectively. After a subsequent
annealing at different temperatures up to 1100 degrees C the samples
have been examined by secondary ion mass spectrometry in order to
measure the hydrogen and oxygen concentration distribution profiles.
Spreading resistance technique has been used to obtain the resistivity
depth profiles on the annealed samples. It has been found that the
buried defect layer could be an effective getter for oxygen atoms by
an appropriate heat treatment. The correlations between the
dependencies of the buried layer resistance versus annealing
temperature and appearance of the thermal donors has been
established. The krypton implanted samples have been also treated with
hydrogen plasma at 400 degrees C. The observed modification of
electrical properties of the samples has been tentatively assigned to
both hydrogen passivation of ion tracks formed by the swift Kr ions
and hydrogen enhanced formation of the thermal donors within the track
containing area.
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Last modified: Mon Feb 19 12:11:06 GMT 1996
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