Oxygen '96
Early Stages of Oxygen Precipitation in Silicon
HYDROGEN-OXYGEN INTERACTIONS IN SILICON
S. K. Estreicher (a) and Y. K. Park (b)
(a) Physics Department, Texas Tech University, Lubbock, TX
79409-1051
(b) Physics Department, University of California, Irvine, CA 92717
Interstitial hydrogen plays many roles in crystalline Si, the best
known of which are probably the shallow-dopant passivation
reactions. Hydrogen also activates electrically inactive impurities,
passivates some deep-level defects and impurities, and creates its own
electrically and optically active centres. Hydrogen interacts with the
A-centre, passivates O-related thermal donors (TDs) at low
temperatures, considerably enhances their formation rate at
intermediate temperatures (300-450 degrees C), and under some
conditions, becomes a component of TDs. None of the various
interactions involving H and O in silicon are understood. However,
various pieces of the puzzle(s) are becoming available from a variety
of experimental and theoretical sources. One fact - although it may be
too early to call it that - is that H plays a purely catalytic role as
it enhances the diffusivity of interstitial O. Two models for this
reaction have been proposed, and molecular dynamics simulations are
underway to learn more about this fundamental process. This talk will
summarise the experimental and theoretical work on H-O interactions in
Si, with emphasis on the interactions between the two interstitials.
Full list of abstracts |
participants
list | main page.
Last modified: Mon Feb 19 12:11:16 GMT 1996
JG