Oxygen '96
Early Stages of Oxygen Precipitation in Silicon
BEAM RAPID THERMAL OXIDATION OF SI
Sergey A. Korenev
Joint Institute for Nuclear Research, 141980, Dubna, Moscow region,
Russia
The results of investigations of rapid thermal oxidation (RTO) of Si
by pulsed electron and ion beams are presented in the report. The
electron beams had kinetic energy E=200-300 keV, beam current
J=300-500 A and pulse duration t=300 ns; and ion beam of carbon with
E=200-300 keV, J=10-50 A, t=300 ns. The beam is pulsed energy source
in the RTO. Adiabatic conditions of pulsed beam oxidation are
discussed. The main electrical characteristics of forming
semiconductors structures are considered. The properties of these
structure also discussed. The future development of beam method of
oxidation of Si and equipment is considered. Beam equipment is very
simple. The main advantages of beam oxidation of Si in the comparison
with lamp method is explained. The questions of defects in the oxygen
layers are investigated and results are discussed.
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Last modified: Mon Feb 19 12:11:13 GMT 1996
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