Oxygen '96
Early Stages of Oxygen Precipitation in Silicon
EFFECT OF HYDROGEN ON OXYGEN-RELATED DEFECT REACTION IN
SILICON AT ELEVATED TEMPERATURES
V. P. Markevich,
I. F. Medvedeva and L. I. Murin
Institute of Solid State and Semiconductor Physics, Academy of
Sciences of Belarus, P.Brovki str. 17, Minsk 220072, Belarus
Keywords: silicon, oxygen, hydrogen, diffusion, thermal
double donors, irradiation, defect reactions
Peculiarities of oxygen-related defect reactions at elevated
temperatures have been studied in Czochralski-grown silicon crystals
pre-annealed in hydrogen gas at 1200-1500 K or in H plasma at 600-750
K. The presence of hydrogen is found to influence significantly
the behaviour of thermally- and radiation-induced defects and to
result in formation of several new electrically and optically active
centres. The generation kinetics of these centres as well as the
thermal double donors in the crystals with different content of
oxygen, hydrogen and radiation-induced defects are investigated.
The states of hydrogen in Si:O,H crystals and possible reactions
between the hydrogen- and oxygen-related centres are discussed.
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Last modified: Mon Feb 19 12:11:12 GMT 1996
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