Oxygen '96
Early Stages of Oxygen Precipitation in Silicon
VARIOUS CONFIGURATIONS OF ISOLATED OXYGEN IN SEMICONDUCTORS
B. Pajot
Groupe de Physique des Solides, Universit Denis Diderot
75251, Paris Cedex 05, FRANCE
Keywords: interstitial oxygen, silicon, germanium, gallium
arsenide
Isolated oxygen has been identified in a few semiconductors, but has
been mostly investigated in Si because it is the starting entity for
different aggregation states, whose control is important for the
fabrication of silicon-based devices. I compare in this presentation
the data on the isolated oxygen forms in Si with those in Ge and GaAs.
I discuss the structure and dynamics of interstitial oxygen in Si and
Ge at the light of recent experimental and theoretical results based
on isotopic substitutions. I compare the piezo-spectroscopic results
obtained on interstitial and quasi-substitutional forms of oxygen in
GaAs with those in Si. I present then a summary of the illumination
effects observed for quasi-substitutional oxygen in semi-insulating
(SI) GaAs in relation with changes in the charge states and
metastability. The results on interstitial and quasi-substitutional
oxygen in GaAs are finally compared with ab initio calculations
which predict, besides the quasi-substitutional form of oxygen, a true
substitutional form.
I discuss briefly the interaction of hydrogen with oxygen in GaAs,
where at least another configuration of oxygen, bonded to hydrogen, is
found, but not identified with certainty. I finally try to summarise
what is known of oxygen in GaP and ZnTe.
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Last modified: Mon Feb 19 12:11:08 GMT 1996
JG