NATO ARW - Oxygen '96

Early Stages of Oxygen Precipitation in Silicon

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Contents of the Proceedings

• Oxygen-related defects in silicon: Studies using stress-induced alignment
  G. D. Watkins
• The initial stages of oxygen agglomeration in silicon: Dimers, hydrogen and self-interstitials
  R. C. Newman
• Infrared studies of the early stages of oxygen clustering in silicon
  J. L. Lindström and T. Hallberg
• Magnetic resonance investigations of thermal donors in silicon
  C. A. J. Ammerlaan, I. S. Zevenbergen, Yu.V. Martynov and T. Gregorkiewicz
• Magnetic resonance on heat treatment centres in silicon
  J. -M. Spaeth
• Effect of hydrogen on oxygen-related defect reactions in silicon at elevated temperatures
  V. P. Markevich, I. F. Medvedeva and L. I. Murin
• Passivation of thermal donors by atomic hydrogen
  J. Weber and D. I. Bohne
• Oxygen-carbon, oxygen-nitrogen and oxygen-dimer defects in silicon
  C. P. Ewels, R. Jones and S. O¨berg
• The role of trivalent oxygen in electrically active complexes
  P. Deák
• Hydrogen-oxygen interactions in silicon
  S. K. Estreicher, Y. K. Park and P. A. Fedders
• Oxygen diffusion in silicon: The influence of hydrogen
  M. Ramamoorthy and S. T. Pantelides
• Generation of thermal donors, nitrogen-oxygen complexes and hydrogen-oxygen complexes in Si
  M. Suezawa
• The electronic structure of the oxygen donor in Si from piezospectroscopy
  M. Stavola
• Low temperature diffusion and agglomeration of oxygen in silicon
  U. Gösele, E. Schroer, P. Werner and T. Y. Tan
• Roles of structural defects and contaminants in oxygen precipitation in silicon
  K. Sumino
• Various forms of isolated oxygen in semiconductors
  B. Pajot
• Oxygen-related luminescence centres created in Czochralski silicon
  E. C. Lightowlers and G. Davies
• The nitrogen-pair oxygen defect in silicon
  F. Berg Rasmussen, S. Oöberg, R. Jones, C. Ewels, J. Goss, J. Miro and P. Deák
• Thermal double donors in silicon: a new insight into the problem
  L. I. Murin and V. P. Markevich
• Interaction of positrons with vacancy-oxygen complexes and oxygen clusters in Si
  M. Fujinami
• Formation of thermal donors in czochralski grown silicon under hydrostatic pressure up to 1GPa
  V. V. Emtsev, B. A. Andreev, A. Misiuk and K. Schmalz
• Complexes of oxygen and group II impurities in silicon
  E. McGlynn, M. O. Henry, S. E. Daly and K. G. McGuigan
• Oxygen and copper precipitation during thermal oxidation of silicon: A TEM and EBIC study
  A. Correia, D. Ballutaud and A. Boutry-Forveille
• Computer simulated distribution of defects formed during Cz-Si crystal growth
  K. Kawakami, H. Harada, T. Iwasaki and R. Habu
• A small angle neutron scattering study of oxygen precipitation in silicon
  R. J. Stewart, S. Messoloras and S. Rycroft
• Atomic composition, structure and vibrational excitation of substitutional carbon-oxygen complexes in silicon
  H. Yamada-Kaneta, Y. Shirakawa and C. Kaneta
• Influence of isovalent doping on the processes of thermal donor formation in silicon
  L. I. Khirunenko, V. I. Shakhovstov, V. V. Shumov and V. I. Yashnik
• Some properties of oxygen-related radiation induced defects in silicon and germanium
  L. I. Khirunenko, V. I. Shakhovstov, V. V. Shumov and V. I. Yashnik
• Defect profiling of oxygen related defects using a slow positron beam
  A. P. Knights, R. D. Goldberg, U. Myler and P. J. Simpson
• Shallow N-O donors in silicon
  A. Gali, J. Miro and P. Deák
• The C-Si-O-Si(.C) four-member ring and the Si-G15 centre
  L. C. Snyder, R. Wu and P. Deák
• Kinetics of oxygen loss and thermal donor formation in silicon: The rapid diffusion of oxygen clusters
  S. A. McQuaid and R. C. Newman
• Molecular dynamics study of oxygen defects in silicon
  P. J. Grönberg, J. von Boehm and R. M. Nieminen
• A kinetic model for precipitation of oxygen in silion
  S. Senkader and G. Hobler
• Oxygen gettering and thermal donor formation at post-implantation annealing of silicon
  A. G. Ulyashin, Yu.A. Bumai, A.I. Ivanov, V.S. Varichenko, N.M. Kazychits, A.M.Zaitsex and W.R.Fahrner
• Carbon-hydrogen-oxygen related centre responsible for the I-line luminescence system
  J. E. Gower, E. C. Lightowlers, G. Davies and A. N. Safanov
• Luminescence investigations of the interaction of oxygen with dislocations in Cz Si
  V. Higgs
• An isochronal annealing study of the kinetics of VO and VO₂ defects in neutron irradiated Si
  C. A. Londos, N. V. Sarlis and L. G. Fytros
• Uniform stress effect on nucleation of oxygen precipitates in Czochralski grown silicon
  A. Misiuk
• On the impact of grown-in silicon oxide precipitate nuclei on silicon gate oxide integrity
  J. Vanhellemont, G. Kissinger, K. Kenis, M. Depas, D. Gräf, U. Lambert and P. Wagner
• Low temperature annealing studies of the divacancy in p-type silicon
  M.-A. Trauwaert, J. Vanhellemont, A. -M. van Bavel, P. Clauws, A. Stesmans, H. E. Maes and G. Langouche
• Anomalous distribution of oxygen precipitates in a silicon wafer after annealing
  H. Ono, T. Ikarashi, S. Kimura, A. Tanikawa and K. Terashima
• Oxygen precipitation in MCz silicon: Behaviour and dependence on the origin of raw material and growth conditions
  T. M. Tkacheva, G. N. Petrov, K. L. Enisherlova and N. A. Iasamanov

Last modified: Mon Dec 9 17:04:54 GMT 1996 Chris Ewels