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Doping Issues in Wide Band-Gap Semiconductors

Exeter, United Kingdom
21-23 March 2001
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Participants

NAMEADDRESS ABSTRACTTYPE
Fanny Albrecht Friedrich-Schiller-Universität, Institut für Festkörperphysik, AG Festkörperphysik, Max-Wien-Platz 1, D-07743 Jena, Germany (email) Radiotracer investigation of a deep Be-related band gap state in 4H-SiC  Poster
Helder Alves I. Physics Institut, University of Giessen, Germany (email) Compensation Mechanism in MBE and MOVPE grown GaN:Mg  Poster
Donat J As University of Paderborn, FB-6 Physics, Warburger Str. 100, D-33095 Paderborn, Germany (email) Carbon - an alternative acceptor for cubic GaN  Talk
Alam Assadulah AIXTRON AG, Kackertstr. 15-17, 52072 Aachen, Germany (email, web) Aixtron AG  Booth
Danie Auret Physics Department, University of Pretoria, Pretoria 0002, South Africa (email) Electrical Characterisation of Defects in As-Grown and Proton Irradiated n-Type ZnO  Invited talk
Johannes Baur OSRAM Opto Semiconductors GmbH&Co OHG (email)    
Friedhelm Bechstedt Friedrich-Schiller-Universität, Institut für Festkörpertheorie und Theoretische Optik, Max-Wien-Platz 1, 07743 Jena, Germany (email, web) Native defects and self-doping in SiC  Invited talk
Baiba Berzina Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., LV-1063 Riga, Latvia (email, web) Natural dopants and their spectral characteristics in AlN crystalline lattice  Talk
Alexander T Blumenau Theoretische Physik, Universität Paderborn, D-33098 Paderborn, Germany, and, School of Physics, University of Exeter, Exeter EX4 4QL, UK (email, web) 60-degree dislocations in GaN and their dissociation  Poster
Paul D Bristowe University of Cambridge, Dept of Materials Science and Metallurgy, Pembroke St, Cambridge CB2 3QZ, UK (email, web) Computational study of the effect of Al and In on the formation energies and acceptor levels of Mg and C dopants in GaN  Poster
Christopher WM Castleton Department of Physics, Uppsala University, Box 530, 751 21 Uppsala, Sweden (email)    
Bernard Clerjaud Laboratoire d'Optique des Solides, Université Pierre et Marie Curie, Case Courrier 80, 4, Place Jussieu, F-75252 Paris cedex 05, France (email) Beryllium and Magnesium Dopants in GaN and their Interactions with Oxygen and Hydrogen  Invited talk
José Coutinho School of Physics, University of Exeter, Exeter EX4 4QL, UK (email, web)    
Stephen Cummins Emcore Corp., Les Campagnes 1C, Le Mas Neuf, 34130 Mauguio, France (email, web) Emcore Corporation  Booth
J. John Davies Department of Physics, University of Bath, Claverton Down, Bath BA2 7AY, UK (email, web) Displaced substitutional acceptors in semiconductors of zincblende structure  Poster
Edward A Davis Department of Physics and Astronomy, University of Leicester, Leicester, LE1 7RH, UK (email) Shallow versus deep hydrogen states in ZnO and HgO  Talk
Peter Deák Budapest University of Technology and Economics, Department of Atomic Physics, Budafoki út 8, Budapest, H-1111, Hungary (email, web) Boron and Aluminum Doping in SiC and its Passivation by Hydrogen  Invited talk
Thomas Eberlein School of Physics, University of Exeter, Exeter EX4 4QL, UK (email, web)    
Jan Evans-Freeman Centre for Electronic Materials and Department EE&E, UMIST, PO Box 88, Sackville Street, Manchester M60 1QD, UK (email)    
Chris P Ewels CPES, University of Sussex, Falmer, Brighton, BN1 9QJ, UK (email, web)    
Caspar J Fall School of Physics, University of Exeter, Exeter EX4 4QL, UK (email, web)    
Antonio Ferreira da Silva Instituto de Fisica, Universidade Federal da Bahia 40210-340 Salvador, Bahia, Brazil (email, web) Influence of Si doping on optical properties of wurtzite GaN  Talk
Jonathan P Goss School of Physics, Stocker Road, Exeter University, Exeter, EX4 4QL, UK (email, web) p-type surface doping of diamond: a first principles study  Talk
Joachim Grillenberger IFK / University of Jena, Max-Wien-Platz 1, 07743 Jena, Germany (email)    
Ulrike Grossner Institut für Festkörperphysik, Friedrich-Schiller-Universität, Max-Wien-Platz 1, 07743 Jena (email, web)    
Pascal Gubbini Emcore Corp., Les Campagnes 1C, Le Mas Neuf, 34130 Mauguio, France (email, web) Emcore Corporation  Booth
Nigel Harrison EMF Limited, Unit 5 Chesterton Mills, French's Road, Cambridge CB4 3NP, UK (email, web) EMF Ltd  Booth
Malcolm Heggie CPES, University of Sussex, Falmer, Brighton., BN1 9QJ, UK (email)    
Ben Hourahine School of Physics, University of Exeter, Exeter EX4 4QL, UK (email, web)    
Bob Jones School of Physics, University of Exeter, Exeter EX4 4QL, UK (email, web)    
Hiroshi Katayama-Yoshida Department of Condensed Matter Physics, The Institute of Scientific and Industrial Research (ISIR), Osaka University, Osaka 567-0047, Japan (email, web) Codoping method for the fabrication of low-resistivity wide bandgap semiconductors: prediction vs. experiment  Invited talk
Markus O Kaukonen School of Physics, University of Exeter, Stocker Road, Exeter, EX4 4QL, UK (email) Hydrogen interstitials in silicon carbide polytypes  Poster
Philip J C King ISIS Facility, Chilton, Oxfordshire, OX11 0QX, United Kingdom (email, web)    
Stanislaw A Krukowski High Pressure Research Center, Polish Academy of Sciences, 01-142 Warsaw, Sokolowska 29/37, Poland (email, web) High nitrogen pressure growth of GaN single crystals: doping and physical properties  Invited talk
   Peculiarities of Dopants Activation in Pressure-Grown GaN:Mg Crystals  Poster
Sergei O Kucheyev Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia (email) Problems of doping GaN by ion implantation  Talk
David Lancefield Department of Physics, School of Physics and Chemistry, University of Surrey, Guildford, Surrey, GU2 7XH, UK (email, web) Temperature Dependent Hole Transport in GaN  Talk
Chris D Latham Laboratory of Physics, Helsinki University of Technology, P.O. Box 1100, FIN-02015 HUT, Finland (email, web) Defects in beryllium doped GaN modelled by local density functional theory  Poster
Yves Marfaing LPSC, CNRS Bellevue, 1, Place Briand, F-92195 Meudon Cedex, France (email, web) Contribution of statistical fluctuations to the co-doping effect  Poster
Bastian Marheineke Thomas Swan Scientific Equipment Ltd, Buckingway Business Park, Cambridge CB4 5UG, UK (email, web) Thomas Swan  Booth
Trevor Martin DERA Malvern, Room PA224, St Andrews Road, Malvern, Worcs WR14 3PS, UK (email) Conduction in Undoped GaN Grown by MOVPE  Talk
Alan Mills III-Vs Review magazine, Elsevier Advanced Technology, The Boulevard, Langford Lane, Kidlington, Oxford OX5 1GB, UK (email, web)    
Bo A Monemar Department of Physics, Linköping University, S-581 83 Linköping, Sweden (email, web) Shallow dopants in GaN  Invited talk
John Mullins Thomas Swan Scientific Equipment Ltd, Buckingway Business Park, Cambridge CB4 5UG, UK (email, web) Thomas Swan  Booth
Christoph E Nebel Walter Schottky Institut, TU-Munich, Am Coulombwall, D-85748 Garching, Germany (email, web) n-type doping of CVD diamond by sulfur  Invited talk
Joerg Neugebauer Fritz-Haber-Institut, Faradayweg 4-6, D-14195 Berlin, Germany (email, web) Dopants on GaN surfaces: Incorporation mechanisms and effect on surface morphology  Invited talk
Risto M Nieminen Laboratory of Physics, Helsinki University of Technology, P.O. Box 1100, 02015 HUT, Finland (email, web) Computational studies of defects and doping in GaN and SiC  Invited talk
Wilfred Okolie Ukrainian Engineerno-Pedagogical Academia, Prospect Pobedi, Dom 60A KB-50, Kharkov-61202, Ukraine (email) Material Physics  Poster
Toshihiko Ooie Marine Resource and Environment Institute, National Institute of Advanced Industrial Science and, Technology, 2217-14 Hayashi-cho, Takamatsu, Kagawa 761-0395 Japan (email, web)    
Derek Palmer Palmer Semiconductor Associates, "Olde Stone", Lydford, Devon EX20-4BH, UK (email, web)    
Rui Nuno Pereira Institute of Solid State Physics, Technical University of Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany (email, web) Determination of nickel-related defect levels in the diamond gap  Talk
Clas Persson Condensed Matter Theory Group, Department of Physics, Box 534, University of Uppsala, SE-751 21 Uppsala, Sweden (email, web) Effective electron and hole masses in intrinsic and heavily n-type doped GaN and AlN  Talk
   First-principle calculations of dielectric function in cubic and hexagonal InN  Poster
Nelson Pinho School of Physics, University of Exeter, Exeter EX4 4QL, UK (email) Passivation of Beryllium and Magnesium by Hydrogen in Boron Nitride  Poster
Luis L Ramos Institut fuer Festkoerpertheorie und Theoretische Optik, Friedrich-Schiller-Universitaet, 07743 Jena, Germany (email, web) Ab initio theory of native defects in alloys: application to charged N vacancies in Al_xGa_(1-x)N  Poster
Jürgen Ristein Institute of Technical Physics, University of Erlangen, Erwin-Rommel-Str. 1, D-91058 Erlangen, Germany (email) An Electrochemical Model for the Surface Conductivity of Diamond  Invited talk
John Robertson Engineering Dept, Cambridge University, Cambridge CB2 1PZ, UK (email) Electronic Structure of Wide-gap Diamond-like Carbons  Invited talk
Simon Rushworth Epichem Ltd, Power Road, Bromborough, Wirral CH62 3QF, UK (email, web) Epichem  Booth
Kimmo T Saarinen Laboratory of Physics, Helsinki University of Technology, P. O. Box 1100, 02015 HUT, Finland (email, web) Vacancies in the growth and doping of gallium nitride  Invited talk
Margaret E Samiji Physics Department, University of Port Elizabeth, PO Box 1600, Port Elizabeth 6000, South Africa (email, web) Hydrogen passivation and reactivation of the Al-acceptors in p-type 6H-SiC  Poster
Gianluca Savini CPES, University of Sussex, Falmer, Brighton., BN1 9QJ, UK (email) Structure and Energy of the 90 Degree Partial Dislocation in wurtzite-GaN  Poster
Paul J Sellin University of Surrey, Department of Physics, Guildford GU2 7XH, UK (email, web)    
Elena Sirenko Ukrainian Engineerno-Pedagogical Academia, Prospect Pobedi, Dom 60A KB-50, Kharkov-61202, Ukraine (email) Material Physics  Poster
Mike Smyth Oxford Instruments plc, Old Station Way, Eynsham, Witney, Oxfordshire OX8 1TL, UK (email, web) Oxford Instruments  Booth
James S Speck Materials Department and ECE Department, University of California, Santa Barbara, CA 93106, USA (email) Optimization of p-doping in the MBE growth of GaN  Talk
G.P. Srivastava School of Physics, University of Exeter, Exeter EX4 4QL, UK (email, web)    
John W Steeds Department of Physics, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, UK (email, web) Photoluminescence microscopy of TEM irradiated diamond and SiC - a new route to high spatial resolution information about point defects at the ppm level and below  Talk
   Micro-Raman and Low Temperature Photoluminescence Investigation of cubic Boron Nitride Single Crystals  Poster
Bengt G Svensson Oslo University, Physical Electronics, Department of Physics, P.B. 1048 Blindern, N-0316 Oslo, Norway (email) Ion Implantation and Doping of Silicon Carbide  Invited talk
Ted Thrush Thomas Swan Scientific Equipment Ltd, Buckingway Business Park, Cambridge CB4 5UG, UK (email, web) Thomas Swan  Booth
Vitor V Torres Physics Department, University of Aveiro, 3810 - 193 Aveiro, Portugal (email)    
Laima Trinkler Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., LV-1063 Riga, Latvia (email, web) Controllable doping as a way to improve dosimetric properties of AlN ceramics  Poster
Daniel DJ Twitchen De Beers Industrial Diamonds (UK) Ltd, Charters, Sunninghill, Sunningdale, Ascot, Berkshire (email)    
Chris G Van de Walle Xerox PARC, 3333 Coyote Hill Road, Palo Alto, CA 94304, USA (email, web) Dopant engineering in wide-band-gap semiconductors  Invited talk
Andre Venter Department of Physics, University of Port Elizabeth, PO Box 1600, Port Elizabeth 6000, South Africa (email)    
Nicholas T Wilson CPES, University of Sussex, Falmer, Brigton., BN1 9QJ, UK (email, web) Annealing processes within Diamond-like Carbon  Poster
Colin E C Wood Office of Naval Research, 800 N. Quincy St, Alrington VA 22217, USA (email)