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Doping Issues in Wide Band-Gap Semiconductors

Exeter, United Kingdom
21-23 March 2001
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Talk abstract

Influence of Si doping on optical properties of wurtzite GaN

A. Ferreira da Silva (1)

(1) Instituto de Fisica, Universidade Federal da Bahia 40210-340 Salvador, Bahia, Brazil

C. Moyses Araujo(1) , C. Persson (2), Bo E. Sernelius (3), R. Ahuja(2), and B. Johansson(2)

(2) Department of Physics, University of Uppsala, SE-751 21 Uppsala, Sweden, (3) Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6032, USA

The influence of doping in semiconductor materials leads to a band gap shift (BGS) causing a remarkable effect on the efficiency of optic-electronic devices. We have investigated the BGS of the Si-doped wurtzite GaN for impurity concentrations spanning the insulating to the metallic regimes. The calculations were carried out within a framework of the random phase approximation and the electron-electron, electron-optical phonon, and electron-ion interactions have been taken into account. In the wake of a very recent photoluminescence measurements, we have showed and discussed the possible transitions involved in the present scenario.