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WideGap2001
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Doping Issues in Wide Band-Gap Semiconductors

Exeter, United Kingdom
21-23 March 2001
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Invited talk abstract

Computational studies of defects and doping in GaN and SiC

Risto M. Nieminen

Laboratory of Physics, Helsinki University of Technology, P.O.Box 1100, 02015 HUT, Finland, -

This talk summarizes results of computational studies, based on density-functional theory and planewave- pseudopotential methods, of point defects and defect- dopant complexes in GaN, AlN and SiC. Among the properties considered are formation energies, ionisation levels, structural parameters and vibrational frequencies. The results will be used to discuss a number defect-related experimental findings.

This work has been done in collaboration with Leena Torpo, Torsten Staab, Chris Latham and Meri Marlo. -