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Doping Issues in Wide Band-Gap SemiconductorsExeter, United Kingdom21-23 March 2001 |
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This talk summarizes results of computational studies, based on density-functional theory and planewave- pseudopotential methods, of point defects and defect- dopant complexes in GaN, AlN and SiC. Among the properties considered are formation energies, ionisation levels, structural parameters and vibrational frequencies. The results will be used to discuss a number defect-related experimental findings.
This work has been done in collaboration with Leena Torpo, Torsten Staab, Chris Latham and Meri Marlo. -