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Doping Issues in Wide Band-Gap SemiconductorsExeter, United Kingdom21-23 March 2001 |
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Diamond-like carbon is an amorphous, sp3 bonded, wide band gap material with potential as a large area electronic material. There are various types of DLC, depending on sp3 content and hydrogen content. The band gap can be up to 3.6 eV. The talk will describe the nature of band edge states, defects, and our ability to dope the material. To date, the mobility of DLC based transistors has been quite low. Nitrogen is a weak dopant, but it also induces sp2 formation. Applications for field emission are also discussed.