WideGap2001

Doping Issues in Wide Band-Gap Semiconductors

University of Exeter, United Kingdom

21-23 March 2001


Group photograph

Report for Compound Semiconductor Magazine

Programme & Participants

Some 3D defect examples:
GaN, SiC, diamond

Practical details, Exhibits

Conference venue, Email access from local systems

Call for papers and registration, Announcement

Download the poster

Workshop Objective:

The aim of the workshop was to bring together experimentalists - interested in optimising and characterising the electrical activity of dopants in wide band-gap materials - and theoreticians who carry out calculations in this area. The workshop focused mainly on defects and impurities in GaN, SiC, ZnO, and diamond.

New:

  • Read the report published in Compound Semiconductor Magazine (PDF)

Supported by the European Science Foundation through the Psi-k network
ESF
Psi-k
with sponsorship from
EMF
Epigress
Thomas Swan
Aixtron
epichem
Emcore
BACG
Oxford Instr.
Visitor Status Bar


Caspar Fall              email: C.J.Fall@exeter.ac.uk
University of Exeter     phone: +44 (1392) 264198
Exeter EX4 4QL, UK       fax  : +44 (1392) 264111
23 March 2001