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WideGap2001
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Doping Issues in Wide Band-Gap Semiconductors

Exeter, United Kingdom
21-23 March 2001
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Poster abstract

First-principle calculations of dielectric function in cubic and hexagonal InN

C. Persson(1)

(1) Department of Physics, University of Uppsala, SE­751 21 Uppsala, Sweden

R. Ahuja(1), A. Ferreira da Silva(2), and B. Johansson(1)

(2) Instituto de Fisica, Universidade Federal da Bahia 40210­340, Salvador, Bahia, Brazil

The imaginary part of the dielectric function of InN have been calculated using a full-potential linearized augmented plane wave method. Both the zinc-blende and the wurtzite structures have been investigated. From the Kramers-Kronig dispersion relations the real part of the dielectric function has been obtained, presuming a quasi-particle band-gap correction according to Bechstedt and Del Sole. We have found that it is necessary to have a good treatment of the band gap in order to obtain the low-frequency optical properties. We present the longitudinal as well as the transverse components in wurtzite InN, showing that the anisotropy is small.