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Doping Issues in Wide Band-Gap SemiconductorsExeter, United Kingdom21-23 March 2001 |
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The imaginary part of the dielectric function of InN have been calculated using a full-potential linearized augmented plane wave method. Both the zinc-blende and the wurtzite structures have been investigated. From the Kramers-Kronig dispersion relations the real part of the dielectric function has been obtained, presuming a quasi-particle band-gap correction according to Bechstedt and Del Sole. We have found that it is necessary to have a good treatment of the band gap in order to obtain the low-frequency optical properties. We present the longitudinal as well as the transverse components in wurtzite InN, showing that the anisotropy is small.