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Doping Issues in Wide Band-Gap SemiconductorsExeter, United Kingdom21-23 March 2001 |
Next |
Provisional programme| 15:00-18:00 | Set-up of industrial exhibits, Engineering building, rooms 101-103 |
| 17:00-22:00 | Registration, foyer of Mardon Hall |
| 19:30-20:30 | Drinks reception, foyer of Mardon Hall (sponsored by Aixtron) |
| 20:00-21:30 | Buffet meal, Mardon Hall dining room |
| 20:00-23:00 | Bar open in Mardon Hall |
| 07:30-08:45 | Breakfast, Mardon Hall dining room |
| 08:00-11:00 | Late registration, Engineering building,
rooms 101-103 |
| Session I, chairman: Bob Jones Engineering building, Harrison lecture theatre | |
| 09:00-09:15 | Welcome address Bob Jones, University of Exeter, UK |
| 09:15-10:00 |
Native Defects and Self-Doping in SiC Friedhelm Bechstedt, Friedrich-Schiller-Universität, Jena, Germany |
| 10:00-10:45 |
Boron and Aluminum Doping in SiC and
its Passivation by Hydrogen Peter Deák, Budapest University of Technology and Economics, Hungary |
| 10:45-11:15 | Coffee break, Engineering building, rooms 101-103 (sponsored by Emcore) |
| Session II, chairman: Bo Monemar Engineering building, Harrison lecture theatre | |
| 11:15-12:00 |
Computational studies of defects
and doping in GaN and SiC Risto M. Nieminen, Helsinki University of Technology, Finland |
| 12:00-12:30 | Carbon - an Alternative
Acceptor for Cubic GaN Donat As, University of Paderborn, Germany |
| 12:30-13:00 | Conduction in Undoped GaN
Grown by MOVPE Trevor Martin, DERA, United Kingdom |
| 13:00-14:00 | Lunch buffet, Engineering building, rooms 101-103 |
| Session III, chairman: Bernard Clerjaud Engineering building, Harrison lecture theatre | |
| 14:00-14:30 | Temperature Dependent
Hole Transport in GaN D. Lancefield, University of Surrey, UK |
| 14:30-15:00 | Effective Electron and
Hole Masses in Intrinsic and Heavily N-type Doped GaN and AlN Clas Persson, University of Uppsala, Sweden |
| 15:00-15:30 | Influence of Si
Doping on Optical Properties of Wurtzite GaN Antonio Ferreira da Silva, Universidade Federal da Bahia, Brasil |
| 15:30-16:00 | Tea break, Engineering building, rooms 101-103 |
| Session IV, chairman: Bengt Svensson Engineering building, Harrison lecture theatre | |
| 16:00-16:45 | High Nitrogen Pressure Growth
of GaN Single Crystals: Doping and Physical Properties Stanislaw Krukowski, High Pressure Research Center, Poland |
| 16:45-17:30 | Vacancies in the Growth and
Doping of Gallium Nitride Kimmo Saarinen, Helsinki University of Technology, Finland |
| 17:30-19:30 | Poster Session & Industrial Exhibits Engineering building, rooms 101-103 |
| 19:30-23:00 | Bar open in Mardon Hall |
| 20:00-21:00 | Dinner, Mardon Hall dining room |
| 07:30-08:45 | Breakfast, Mardon Hall dining room |
| Session V, chairman: Friedhelm Bechstedt Engineering building, Harrison lecture theatre | |
| 09:00-09:45 | Electronic Structure of
Wide-gap Diamond-like Carbons John Robertson, Cambridge University, UK |
| 09:45-10:30 | N-type Doping of CVD Diamond by Sulfur Christoph Nebel, Walter Schottky Institut, Garching, Germany (talk sponsored by Oxford Instruments) |
| 10:30-11:00 | Coffee break, Engineering building, rooms 101-103 (sponsored by Emcore) |
| Session VI, chairman: Risto Nieminen Engineering building, Harrison lecture theatre | |
| 11:00-11:45 | Photoluminescence
microscopy of TEM irradiated diamond and SiC - a new route to high
spatial resolution information about point defects at the ppm level and below John Steeds, University of Bristol, UK |
| 11:45-12:30 | Dopant engineering in
wide-band-gap semiconductors Chris G. Van de Walle, Xerox PARC, Palo Alto, USA |
| 12:30-13:00 | Group photograph, outside Engineering building |
| 13:00-14:00 | Lunch buffet, Engineering building, rooms 101-103 |
| Session VII, chairman: Joerg Neugebauer Engineering building, Harrison lecture theatre | |
| 14:00-14:45 | Shallow versus deep hydrogen
states in ZnO and HgO P. J. C. King, Rutherford Appleton Laboratory, UK |
| 14:45-15:30 | Electrical
Characterisation of Defects in As-Grown
and Proton Irradiated n-Type ZnO Danie Auret, University of Pretoria, South Africa |
| 15:30-16:00 | Tea break, Engineering building, rooms 101-103 |
| Session VIII, chairman: Kimmo Saarinen Engineering building, Harrison lecture theatre | |
| 16:00-16:45 | Beryllium and Magnesium Dopants
in GaN and their Interactions with Oxygen and Hydrogen Bernard Clerjaud, Université Pierre et Marie Curie, France |
| 16:45-17:30 | Shallow Dopants in GaN Bo Monemar, Linköping University, Sweden |
| 17:30-19:30 | Poster Session & Industrial Exhibits Engineering building, rooms 101-103 |
| 19:30-20:00 | Drinks reception in Reed Hall (sponsored by Thomas Swan) |
| 20:00-22:00 | Conference Banquet, Reed Hall |
| 21:00-24:00 | Bar open in Reed Hall |
| 07:30-08:45 | Breakfast, Mardon Hall dining room |
| Session IX, chairman: Peter Deák Engineering building, Harrison lecture theatre | |
| 09:00-09:45 | Codoping method for the
fabrication of low-resistivity wide bandgap semiconductors:
prediction vs. experiment Hiroshi Katayama-Yoshida, Osaka University, Japan |
| 09:45-10:30 | Dopants on GaN surfaces: Incorporation
mechanisms and effect on surface morphology Joerg Neugebauer, Fritz-Haber-Institut, Germany |
| 10:30-11:00 | Coffee break, Engineering building, rooms 101-103 (sponsored by Emcore) |
| Session X, chairman: Christoph Nebel Engineering building, Harrison lecture theatre | |
| 11:00-11:30 | Determination of
Nickel-Related Defect Levels in the Diamond Gap Rui Nuno Pereira, Technical University Berlin, Germany |
| 11:30-12:15 | Surface doping: a special feature
of diamond Jürgen Ristein, University of Erlangen, Germany |
| 12:15-12:45 | P-type surface doping
of diamond: a first principles study Jonathan Goss, University of Exeter, UK |
| 12:45-14:00 | Lunch buffet, Engineering building, rooms 101-103 |
| Session XI, chairman: John Robertson Engineering building, Harrison lecture theatre | |
| 14:00-14:30 | Problems of Doping
GaN by Ion Implantation Sergei Kucheyev, The Australian National University |
| 14:30-15:15 | Ion Implantation and Doping of
Silicon Carbide Bengt Svensson, Oslo University, Norway |
| 15:15-15:45 | Tea break, Engineering building, rooms 101-103 |
| Session XII, chairman: Chris Van de Walle Engineering building, Harrison lecture theatre | |
| 15:45-16:15 | Optimization of
p-doping in the MBE growth of GaN James Speck, University of California, USA |
| 16:15-16:45 | Natural Dopants
and their Spectral Characteristics in the AlN crystalline lattice Baiba Berzina, University of Latvia |
| 16:45-17:00 | Concluding remarks Bob Jones, University of Exeter, UK |
| 18:00-24:00 | Bar open in Mardon Hall |
| 20:00-21:00 | Dinner, Mardon Hall dining room |
| 08:00-09:30 | Breakfast, Mardon Hall dining room |
| 09:00-10:00 | Conference delegates depart |
Caspar Fall email: C.J.Fall@exeter.ac.uk University of Exeter phone: +44 (1392) 264198 Exeter EX4 4QL, UK fax : +44 (1392) 264111