Banner
WideGap2001
Shield

Index

Doping Issues in Wide Band-Gap Semiconductors

Exeter, United Kingdom
21-23 March 2001
Next

Announcement

The objective of this workshop is to gather modellers, experimentalists and industrialists studying the engineering of shallow dopants in wide band gap materials such as GaN, SiC, and diamond.

There is a great deal of interest in overcoming problems relating to shallow dopants in these materials. For example, boron is a shallow acceptor in diamond but there are problems relating to shallow donors. Phosphorus and sulphur are key candidates at the moment and there is intense interest in optimising their activity.

In GaN, oxygen and silicon are known to be shallow donors but there are difficulties in finding efficient shallow p-type dopants - Mg and Be are favoured but have low activities. In SiC, nitrogen and boron on the Si site are the best donors available. Nevertheless all these dopants suffer problems relating to solubility and the formation of complexes.

Experimentalists are very well aware that ab initio modelling is a very effective way in which dopant activity can be predicted. It is significant that the oxygen donor in GaN was first suggested from ab initio theoretical results.

There is current interest in co-doping where the electrical activity can be increased when two or more impurities (sometimes both donors and acceptors) are involved and this will be one of the topics at the workshop. Other topics will involve growth and characterisation.

This workshop will last for 3 days and will feature a small number of extended invited talks, contributed talks, and poster sessions. Ample time for informal discussions will be provided.

This workshop follows previous events organised in Exeter: Hydrogen'99, which focused on hydrogen in silicon, and Oxygen'96, a NATO advanced research workshop centred on early stages of oxygen precipitation in silicon.

Confirmed invited speakers include:

Prof. Friedhelm Bechstedt, Friedrich-Schiller-Universität Jena, Germany Native defects and self-doping in SiC
Dr. Bernard Clerjaud, Université P. et M. Curie, Paris, France Beryllium and magnesium impurities in GaN and their interactions with oxygen and hydrogen
Prof. Peter Deák, TU Budapest, Hungary Boron and aluminium doping in SiC and its passivation by hydrogen
Prof. Hiroshi Katayama-Yoshida, Osaka University, Japan Codoping method for the fabrication of low-resistivity wide bandgap semiconductors
Dr. Stanislaw Krukowski, High Pressure Research Center, Warsaw, Poland High nitrogen pressure growth of GaN single crystals: doping and physical properties
Dr. Christoph E. Nebel, Walter Schottky Institut, Garching, Germany n-type doping of CVD-diamond by sulfur
Dr. Joerg Neugebauer, Fritz-Haber-Institut, Berlin, Germany Acceptor doping and compensation in group-III nitrides
Prof. Risto Nieminen, Helsinki University of Technology, Finland
Prof. Bo Monemar, Linköping University, Sweden Shallow dopants in HVPE GaN
Dr. Juergen Ristein, University of Erlangen, Germany Surface doping: a special feature of diamond
Dr. John Robertson, University of Cambridge, UK
Prof. Kimmo Saarinen, Helsinki University of Technology, Finland Vacancies in the growth and doping of GaN
Prof. Bengt Svensson, Royal Institute of Technology, Stockholm, Sweden Doping of silicon carbide by ion implantation
Dr. Chris van de Walle, Xerox PARC, Palo Alto, USA

Additional talks will be selected from the contributed abstracts.

Local Organisers

Prof. R. Jones & Dr. C. J. Fall
School of Physics
University of Exeter
Stocker Road
Exeter EX4 4QL
United Kingdom
Telephone: +44 1392 264134
Secretary: +44 1392 264151
Fax: +44 1392 264111
Email: widegap2001@excc.ex.ac.uk

Caspar Fall              email: C.J.Fall@exeter.ac.uk
University of Exeter     phone: +44 (1392) 264198
Exeter EX4 4QL, UK       fax  : +44 (1392) 264111