Latest Publications

Submitted Articles a.k.a. “Where are they now?”

• The hydrogen related photoluminescent centers in SiC
  D. Prezzi, T. A. G. Eberlein, R. Jones, B. Hourahine, P. R. Briddon, and S. Öberg
  Physical Review B, in press
• Electrical and optical properties of rod-like-defects in silicon
  J. P. Goss, P. R. Briddon, T. A. G. Eberlein, R. Jones, N. Pinho, A. T. Blumenau, and S. Öberg
  Applied Physics Letters, in press
• Stable hydrogen pair trapped at carbon impurities in silicon
  B. Hourahine, R. Jones, S. Öberg, P. R. Briddon, V. P. Markevich, R. C. Newman, J. Hermansson, M. Kleverman, J. L. Lindström, L. I. Murin, N. Fukata, and M. Suezawa
  Submitted PRB Rapid Oct. 2001 [PDF] [PS]

Refereed Articles

2004

• Degradation of boron doped Cz-Si solar cells
  J. Adey, R. Jones, D. W. Palmer, P. R. Briddon, and S. Öberg
  Physical Review Letters 93, 055504 (2004) [Link]
• Shallow donors in diamond: chalcogens, pnictogens, and their hydrogen complexes
  S. J. Sque, R. Jones, J. P. Goss, and P. R. Briddon
  Physical Review Letters 92 (1), 017402 (2004) [Link]
• Donor and acceptor states in diamond
  J. P. Goss, P. R. Briddon, R. Jones, and S. Sque
  Diamond and Related Materials 13, 684–690 (2004) [Link]
• Optical and electrical properties of vanadium and erbium in 4H-SiC
  D. Prezzi, T. A. G. Eberlein, J.-S. Filhol, R. Jones, M. J. Shaw, P. R. Briddon, and S. Öberg
  Physical Review B 69 (19), 193202 (2004) [Link]
• Structure and electrical activity of rare-earth dopants in GaN
  J.-S. Filhol, R. Jones, M. J. Shaw, and P. R. Briddon
  Applied Physics Letters 84 (15), 2841–2843 (2004) [Link]

2003

• Hydrogen molecules in 4H-SiC and 2H-GaN
  T. A. G. Eberlein, L. Huggett, R. Jones, and P. R. Briddon
  Journal of Physics: Condensed Matter 15 (39), S2897–S2902 (2003) [Link]
• Z₁/Z₂ defects in 4H-SiC
  T. A. G. Eberlein, R. Jones, and P. R. Briddon
  Physical Review Letters 90 (22), 225502 (2003) [Link]
• Shallow donors in diamond: pnictogen and chalcogen hydrogen defects
  S. J. Sque, R. Jones, J. P. Goss, and P. R. Briddon
  Physica B: Condensed Matter 340–342, 80–83 (2003) [Link]
• The vacancy-nitrogen-hydrogen complex in diamond: a potential deep centre in chemical vapour deposited material
  J. P. Goss, P. R. Briddon, R. Jones, and S. Sque
  Journal of Physics: Condensed Matter 15, S2903–S2911 (2003) [Link]
• Interstitial boron defects in Si
  J. Adey, J. P. Goss, R. Jones, and P. R. Briddon
  Physica B: Condensed Matter 340–342, 505–508 (2003) [Link]
• Optical and electrical activity of boron interstitial defects in Si
  J. Adey, R. Jones, P. R. Briddon, and J. P. Goss
  Journal of Physics: Condensed Matter 15, S2851–S2858 (2003) [Link]
• Formation of B_iO_i, B_iC_s, and B_iB_sH_i defects in e-irradiated or ion-implanted silicon containing boron
  J. Adey, R. Jones, and P. R. Briddon
  Applied Physics Letters 83 (4), 665–667 (2003) [Link]
• Identification of boron clusters and boron-interstitial clusters in silicon
  J. Adey, J. P. Goss, R. Jones, and P. R. Briddon
  Physical Review B 67, 245325 (2003) [Link]
• Structure and electrical activity of rare-earth dopants in selected III-Vs
  J.-S. Filhol, S. Petit, R. Jones, B. Hourahine, T. Frauenheim, H. Overhof, J. Coutinho, M. J. Shaw, P. R. Briddon, and S. Öberg
  Materials Research Society Symposium Proceedings 798, 471–476 (2003)

2002

• Planar interstitial aggregates in Si
  J. P. Goss, T. A. G. Eberlein, R. Jones, N. Pinho, A. T. Blumenau, T. Frauenheim, P. R. Briddon, and S. Öberg
  Journal of Physics: Condensed Matter 14 (48), 12843–12853 (2002) [Link]
• Alphabet luminescence lines in 4H-SiC
  T. A. G. Eberlein, C. J. Fall, R. Jones, P. R. Briddon, and S. Öberg
  Physical Review B 65 (18), 184108 (2002) [Link]
• Interstitial carbon-oxygen center and hydrogen related shallow thermal donors in Si
  J. Coutinho, R. Jones, P. R. Briddon, S. Oberg, L. I. Murin, V. P. Markevich, and J. L. Lindstrom
  Phys. Rev. B 65, 014109 (2002) [Link]

2001

• Self-interstitial clusters in silicon
  T. A. G. Eberlein, N. Pinho, R. Jones, B. J. Coomer, J. P. Goss, P. R. Briddon, and S. Öberg
  Physica B: Condensed Matter 308, 454–457 (2001) [Link]
• Density-functional calculations of carbon doping in III-V compound semiconductors
  C. D. Latham, R. Jones, S. Öberg, P. R. Briddon
  Physical Review B 63 (15), 155202 (2001) [Link]
• Identification of the tetra-interstitial in silicon
  B. J. Coomer, J. P. Goss, R. Jones, S. Oberg, P. R. Briddon
  J. Phys.: Condens. Matter 13, L1 (2001) [Link] [Preprint PDF]
• Self-interstitial aggregation in diamond
  J. P. Goss, B. J. Coomer, R. Jones, T. D. Shaw, P. R. Briddon, M. Rayson, and S. Öberg
  Phys. Rev. B 63, 195208 (2001) [Link] [Preprint PDF] [Preprint PS]
• Oxygen and dioxygen centers in Si and Ge: Density-functional calculations
  J. Coutinho, R. Jones, S. Öberg, and P. R. Briddon
  Phys. Rev. B 62, 10824 (2001) [Link]
• Thermal double donors and quantum dots
  J. Coutinho , R. Jones, L. I. Murin, V. P. Markevich, J. L. Lindstrom, P. R. Briddon, S. Oberg
  Phys. Rev. Lett 87, 235501 (2001) [Link]

2000

• Intrinsic Defects and the D1 to D4 Optical Bands Detected in Plastically Deformed Si
  R. Jones, B. J. Coomer, J. P. Goss, S. Öberg, and P.R. Briddon
  Physica Status Solidi B 222 (1), 133–140 (2000) [Link] [Preprint PDF]
• Small aggregates of interstitials and models for platelets in diamond
  J. P. Goss, B. J. Coomer, R. Jones, C. J. Fall, C. D. Latham, P. R. Briddon, S. Öberg
  Journal of Physics: Condensed Matter 12 (49), 10257–10261 (2000) [Link]
• Observation and theory of the V-O-H₂ complex in silicon
  V. P. Markevich, L. I. Murin, M. Suezawa, J. L. Lindstrom, J. Coutinho, R. Jones, P. R. Briddon, S. Oberg
  Phys. Rev. B 61, 12964 (2000) [Link]
• Identification of the hexavacancy in silicon with the B⁴₈₀ optical center
  B. Hourahine, R. Jones, A. N. Safonov, S. Öberg, P. R. Briddon, and S. K. Estreicher
  Phys. Rev. B 61, 12594 (2000) [Link] [Preprint PDF]
• Weakly bound carbon-hydrogen complex in silicon
  L. Hoffmann, E. V. Lavrov, B. Bech Nielsen, B. Hourahine, R. Jones, S. Öberg, and P. R. Briddon
  Phys. Rev. B 61, 16659 (2000) [Link]

1999

• Structures, Energetics and Electronic Properties of Complex III-V Semiconductor Systems
  M. Haugk, J. Elsner, Th. Frauenheim, C. D. Latham, R. Jones, H. S. Leipner, G. Seifert, and M. Sternberg
  Physica Status Solidi B 217 (1), 473–511 (1999) [Link] [Abstract]
• Raman scattering observations and ab initio models of dicarbon complexes in AlAs
  B. R. Davidson, R. C. Newman, C. D. Latham, R. Jones, J. Wagner, C. C. Button, P. R. Briddon
  Physical Review B 60 (8), 5447–5445 (1999) [Link] [Abstract]
• Density-functional calculations of carbon diffusion in GaAs
  C. D. Latham, M. Haugk, R. Jones, Th. Frauenheim, P. R. Briddon
  Physical Review B 60 (22), 15117–15122 (1999) [Link] [Abstract]
• Mechanism for dicarbon defect formation in AlAs and GaAs
  C. D. Latham, R. Jones, M. Haugk, Th. Frauenheim, P. R. Briddon
  Physica B 273–274, 784–787 (1999) [Link] [Abstract]
• Calculations of Electrical Levels of Deep Centers: Application to Au-H and Ag-H Defects in Silicon
  A. Resende, R. Jones, S. Öberg, and P. R. Briddon
  Phys. Rev. Lett. 82, 2111 (1999) [Link]
• Self interstitial-hydrogen complexes in silicon
  B. Hourahine, R. Jones, S. Öberg, and P. R. Briddon
  Phys. Rev. B 59, 15729–15732 (1999) [Link] [Preprint PDF]

1998

• Deep acceptors trapped at threading-edge dislocations in GaN
  J. Elsner, R. Jones, M. I. Heggie, P. K. Sitch, M. Haugk, Th. Frauenheim, S. Öberg, and P. R. Briddon
  Phys. Rev. B 58, 12571 (1998) [Link] [Preprint PS]
• First Stage of Oxygen Aggregation in Silicon: The Oxygen Dimer
  S. Öberg, C. P. Ewels, R. Jones, T. Hallberg, J. L. Lindström, L. I. Murin, and P. R. Briddon
  Phys. Rev. Lett. 81, 2930–2933 (1998) [Link]
• Effect of oxygen on the growth of (10[-1]0) GaN surfaces: the formation of nanopipes
  J. Elsner, R. Jones, M. Haugk, R. Gutierrez, Th. Frauenheim, M. I. Heggie, S. Öberg, and P. R. Briddon
  Applied Physics Letters 73, 3530 (1998) [Link] [Preprint PS]
• Hydrogen molecules in silicon located at interstitial sites and trapped in voids
  B. Hourahine, R. Jones, S. Öberg, R. C. Newman, P. R. Briddon, and E. Roduner
  Phys. Rev. B 57 (20), R12666–R12669 (1998) [Link] [Preprint PS]

1997

• Theory of Threading Edge and Screw Dislocations in GaN
  J. Elsner, R. Jones, P. K. Sitch, V. D. Porezag, M. Elstner, Th. Frauenheim, M. I. Heggie, S. Öberg, and P. R. Briddon
  Phys. Rev. Lett. 79 (19), 3672–3675 (1997) [Link]

Conference Proceedings

GADEST (Berlin, 2003)

• Structure and electronic properties of nitrogen defects in silicon
  R. Jones, I. Hahn, J. P. Goss, P. R. Briddon, and S. Öberg
  Diffusion and Defect Data Part B: Solid State Phenomena 95–96, 93–98 (2004)
  [Preprint PDF]

ENDEASD (Stockholm, 2000)

• Interaction of hydrogen with secondary radiation defects
  B. Hourahine, R. Jones, P. R. Briddon, and S. Öberg
  [PS] [PDF]
• The tri-interstitial defect in Si
  N. Pinho, B. J. Coomer, J. P. Goss, R. Jones, P. R. Briddon, and S. Öberg
  [PS] [PDF]
• Formation and diffusivity of small oxygen aggregates in Si and Ge
  J. Coutinho, R. Jones, P. R. Briddon, and S. Öberg
  [PS] [PDF]
• I₄ in silicon: correlation with experiment
  B. J. Coomer, J. P. Goss, R. Jones, S. Öberg, and P. R. Briddon
  [PS] [PDF]
• Theory of interstitial aggregates in germanium
  S. Birner, J. P. Goss, R. Jones, P. R. Briddon, and S. Öberg
  [PS] [PDF]

ICDS-20 (Berkeley, 1999) Physica B 273–274

• Local vibrational mode bands of V-O-H complexes in silicon
  V. P. Markevich, L. I. Murin, M. Suezawa, J. L. Lindstrom, J. Coutinho, R. Jones, P. R. Briddon, S. Oberg
• Optically active hydrogen dimers in silicon
  B. Hourahine, R. Jones, A. N. Safonov, S. Öberg, P. R. Briddon, and S. K. Estreicher
  [PDF] [Postscript]
• Interstitial aggregates and a new model for the I₁/W optical centre in silicon
  B. J. Coomer, J. P. Goss, R. Jones, S. Öberg, and P. R. Briddon
  [PDF] [Postscript]
• The divacancy in silicon and diamond
  B. J. Coomer, A. Resende, J. P. Goss, R. Jones, S. Öberg, and P. R. Briddon
  [PDF] [PS]
• Mechanism for dicarbon defect formation in AlAs and GaAs
  C. D. Latham, R. Jones, M. Haugk, Th. Frauenheim, P. R. Briddon
  [Abstract]

E-MRS Meeting (Strasbourg, 1999)

• Do we really understand dislocations in semiconductors?
  R. Jones
  [PDF] [PS]

ENDEASD (Santorini, 1999)

• Summer School
  • Simulations of Deep-Level Defects in Semiconductors
    A. Resende
    [PS] [PDF]
• Workshop
  • Investigations of Defects in Silicon using First Principles Methods
    R. Jones, A. Resende, S. Öberg and P. R. Briddon
    [PDF]
  • Self-Interstitial Clusters in Silicon
    B. J. Coomer, J. P. Goss, A. Resende, R. Jones, S. Öberg and P. R. Briddon
    [PS] [PDF]

E-MRS Meeting (Strasbourg, 1998)

• The electronic properties of transition metal hydrogen complexes in silicon
  R. Jones, A. Resende, S. Öberg, and P. R. Briddon
  [PDF] [html]
• The structural properties of transition metal hydrogen complexes in silicon
  A. Resende, R. Jones, S. Öberg, and P. R. Briddon
  [PDF] [HTML]
• Molecular hydrogen traps within silicon
  B. Hourahine, R. Jones, S. Öberg, and P. R. Briddon
  [PDF] [HTML]
• Vacancy-hydrogen complexes in germanium
  B. J. Coomer, P. Leary, M. Budde, B. Bech Nielsen, R. Jones, S. Öberg, and P. R. Briddon
  [PDF] [HTML]

Book Contributions

• The Interaction of Hydrogen with Deep Level Defects in Silicon
  R. Jones, B. J. Coomer, J. P. Goss, B. Hourahine, and A. Resende.
  To be published in Special defects in semiconducting materials, edited by R. P. Agarwala [PS] [PDF]
• The Ab Initio Cluster Method and the Dynamics of Defects in Semiconductors
  R. Jones and P. R. Briddon
  Chapter 6 in Identification of Defects in Semiconductors, edited by M. Stavola
  Vol. 51A of Semiconductors and Semimetals, edited by R. K. Willardson, A. C. Beer, and E. R. Weber
  Academic Press, Boston (1998) [PS] [PDF]

AIMPRO Group

Theoretical Physics