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Professor G. P. Srivastava publications by first author Srivastava, G.P.

Up to the index or back to Professor G. P. Srivastava publications by first author Smardon, RD (3 publications).

`Thermal conduction in nonmetals' of Materials
G. P. Srivastava
Encyclopedia Science and Technology (Editors: K H J Buschow, R W Cahn, M C Flemings, B Llschner, E J Kramer, S Mahajan; Publisher: Elsevier, 2002) pp. 1-5

Surface passivation by dissociative molecular adsorption
G. P. Srivastava
Vacuum 67 (2002) 11-20.

Progress in theoretical studies of surface phonons
G. P. Srivastava
Phonons in Condensed Materials Ed: S P Sanyal and R K Singh, Allied Publishers (2004)

Atomic-scale theoretical investigations of compound semiconductor surfaces
G. P. Srivastava
Appl. Surf. Sci. 244 (2005) 129-136

Lattice Thermal Conduction Mechanism in Solids
G. P. Srivastava
Publisher: Springer; Editors: S L Shinde and J S Goela (2006) pp 1-35

Non-equilibrium optical phonon dynamics in bulk and low-dimensional semiconductors
G. P. Srivastava
Proc. SPIE 6471 (2007) 64710W

Origin of the hot phonon effect in group-III nitrides
G.P. Srivastava
Phys. Rev. B 77 (2008) 155205:1-6

Theory of Thermal Conductivity of Micro- and Nano-structured Materials
G. P. Srivastava
Mater. Res. Soc. Symp. Proc. 1172 (2009) T08-07:1-12

Theoretical modelling of surface phonons
G. P. Srivastava and H. M. Tutuncu
Central Europ. J. Phys 7 (2009) 209-219.

Anharmonic phonon decay rate in group-III nitrides
G. P. Srivastava
J. Phys. CM 21 (2009) 174205:1-8

Theoretical analysis of semiconductor surface passivation by adsorption of alkaline-earth metals and chalcogens
G. P. Srivastava, A. Z. AlZahrani and D. Usanmaz
Appl. Surf. Sci. 258 (2012) 8377.

Tuning phonon properties in thermoelectric materials
G. P. Srivastava
Rep. Prog. Phys. 78 (2015) 026501:1-41

Thermal Conduction in Nonmetals
G. P. Srivastava
In: Saleem Hashmi (editor-in-chief), Reference Module in Materials Science and Materials Engineering. Oxford: Elsevier; (2016) pp. 1-9.

Temperature-dependent Raman linewidths in transition-metal dichalcogenides
G. P. Srivastava and I. O. Thomas
Phys. Rev. B 98 (2018) 035430:1-8

Complementary Variational Principles (REVIEW ARTICLE)
G. P. Srivastava and R A H Hamilton
Phys Reports 38C, 1-86 (1978).

Theory of the Cohesive Energies of Solids (REVIEW ARTICLE)
G. P. Srivastava and D Weaire
Advances in Physics 36, 463-517 (1987).

Ab-Initio Computer modelling of semiconductor surfaces (REVIEW ARTICLE)
G. P. Srivastava and R Jones
Advanced Materials 4, 482-489 (1992).

c-Si surfaces - review of theoretical studies
G. P. Srivastava
`Properties of Crystalline Silicon' (Ed: R Hull; Publ: INSPEC, The Institution of Electrical Engineers, London, UK) (1999) pp: 288-298.

Computers calculate silicon surface structure
G. P. Srivastava and R Jones
Physics World 4, 28 (1991).

Parallel studies reconstruct silicon
G. P. Srivastava
Physics World 5, 20-21 (1992).

Three-phonon processes and third-order atomic coupling constants
G. P. Srivastava, D P Singh and G S Verma
Solid State Phys and Nucl Phys (India) 12C, 187-190 (1969).

Variational treatment of the Ziman limit of thermal resistance due to umklapp processes
G. P. Srivastava and G S Verma
Solid State Phys and Nucl Phys (India) 13C, 531-534 (1970).

A two-sided variational approach for phonon conductivity
G. P. Srivastava
Solid State Phys and Nucl Phys (India) 15C, 491-494 (1973).

Acoustic-optical phonon interactions in solids
G. P. Srivastava
Phonon Scattering in Condensed Matter (Ed H J Maris, Publ : Plenum 1979) 149-153

Influence of deep levels on Schottky barrier formation
G. P. Srivastava
Semi-Insulating III-V Materials (Ed. G J Rees, Shiva Publ 1980) 296-298

Phonon conductivity due to nondiagonal energy-flux operator
G. P. Srivastava
J Physique 42 C6:149-151 (1981).

Role of thermal expansion in the phonon conductivity of solids
G. P. Srivastava
J Physique 42 C6:253-255 (1981).

Phonons in germanium along the [110] direction: 'Direct' approach
G. P. Srivastava and K Kunc
Phonon Physics (Publ: World Scientific Publ Pte Ltd Singapore 1985) 953-955

Electronic states in the ultrathin superlattices (GaAs)n(AlAs)n and (GaAs)n(ZnSe)n
G. P. Srivastava
Inst Phys Conf Ser No 91: Chapter 6 (int Symp GaAs and Related Compounds, Heraklion, Greece, 1987) 529-532

Discussion on paper "STM studies of Fermi-level pinning on the GaAs(001) surface"
G. P. Srivastava
Phil Trans of the Royal Soc : physical sciences 344, 543 (1993).

Discussion on paper "Control of electrical barriers at semiconductor heterojunctions by interface doping"
G. P. Srivastava
Phil Trans of the Royal Soc : physical sciences 344, 585 (1993).

Temperature dependence of the bounds on thermal resistance due to U-processes
G. P. Srivastava and G S Verma
Phys Stat Sol (b) 47, 669 (1971).

Choice of trial function for the calculation of thermal resistivity due to electron-phonon scattering
G. P. Srivastava and G S Verma
Solid State Commun 9 2077-2079 (1971).

On the bounds on the three-phonon U-resistance
G. P. Srivastava and G S Verma
Phys Stat Sol (b) 50, K121- (1972).

Second upper-bound on the three-phonon resistivity in Ge
G. P. Srivastava and G S Verma
Phys Lett 41A, 61- (1972).

Variational treatment of Ziman limit conductivity
G. P. Srivastava and G S Verma
Ind J Pure and Appl Phys 10, 750- (1972).

Three-phonon scattering strengths and Ziman limit of resistivity due to three-phonon scattering processes in Ge
G. P. Srivastava, D P Singh and G S Verma
Phys. Rev. B 6, 3053-3055 (1972).

Variational treatment of three-phonon scattering processes in an anisotropic insulator
G. P. Srivastava, D P Singh and G S Verma
Ind J Pure and Appl Phys 11, 79- (1973).

Contribution of longitudinal and transverse phonons towards the thermal conductivity of Ge in the Ziman limit
G. P. Srivastava and G S Verma
Phys. Rev. B 7, 897-898 (1973).

On the boundary scattering of phonons
G. P. Srivastava and G S Verma
Can J Phys 51, 223-225 (1973).

On the boundedness of the eigenvalue spectrum of phonon collision operator
G. P. Srivastava
Phys Lett 45A, 321 (1973).

Lower and upper bounds on the three-phonon U-resistance in Ge
G. P. Srivastava
Phys Stat Sol (b) 56, K39- (1973).

Anharmonic relaxation of phonons
G. P. Srivastava
Pramana (India) 3, 209-217 (1974).

Calculation of bounds on the eigenvalue spectrum of anharmonic phonon collision operator
G. P. Srivastava
Phys Lett 54A, 22- (1975).

Complementary variational principles for lattice thermal conductivity
G. P. Srivastava
Phys Stat Sol (b) 68, 213-222 (1975).

Calculation of some variational bound results on lattice thermal conductivity of Ge
G. P. Srivastava
J Phys C 8, 4147-4156 (1975).

Calculation of anharmonic relaxation of phonons
G. P. Srivastava
Pramana (India) 6, 1-18 (1976).

Comparison of high-temperature three-phonon resistivities from different theoretical models
G. P. Srivastava
Pramana (India) 7, 236-244 (1976).

Derivation and calculation of a sequence of lower bounds for lattice thermal conductivity
G. P. Srivastava
Phys Stat Sol (b) 77, 131-140 (1976).

Calculation of lattice thermal conductivity of Ge from 4 - 900 K
G. P. Srivastava
Phil Mag 34, 795-809 (1976).

On the use of variational n-parameters trial function in the calculation of lattice thermal conductivity
G. P. Srivastava
J Phys C 9, L11-L13 (1976).

Derivation and calculation of complementary variational principles for lattice thermal conductivity
G. P. Srivastava
J Phys C 9, 3037-3053 (1976).

Hypercircle approach and complementary variational principles for lattice thermal conductivity
G. P. Srivastava
Phys Stat Sol (b) 60, 657-660 (1977).

Improvement of variational bounds on lattice thermal conductivity by scaling and Ritz procedures
G. P. Srivastava
J Phys C 10, 1843-1854 (1977).

A note on the nature of phonon collision operator
G. P. Srivastava
J Phys C 10, L63- (1977).

Electronic and optical properties of c- and a-Si
G. P. Srivastava
Phys Stat Sol (b) 85, K121-K126 (1978).

Role of optical phonons in the high-temperature thermal conductivity of semiconductors
G. P. Srivastava
Phys Stat Sol (b) 90, K125-K128 (1978).

Electronic structure of a neutral phosphorus vacancy in GaP and InP
G. P. Srivastava
Phys Stat Sol (b) 93, 761-765 (1979).

A model pseudopotential calculation of the electronic structure of Si(111) 1x1 surface
G. P. Srivastava
Solid State Commun 33, 1209-1212 (1980).

Phonon conductivity of insulators and semiconductors
G. P. Srivastava
J. Phys. Chem. Solids 41, 357-368 (1980).

Diagonal and nondiagonal Peierls contribution to the thermal conductivity of anharmonic crystals
G. P. Srivastava and M Prasad
Phys. Rev. B 23, 4273-4275 (1981).

Semiempirical pseudopotential calculation of the clean (110) surface of InP
G. P. Srivastava and I Singh
Vacuum 31, 675-677 (1981).

Self-consistent pseudopotential calculation for the electronic structure of Ge
G. P. Srivastava
Phys. Rev. B 25, 2815-2820 (1982).

Self-consistent pseudopotential calculations for the electronic structure of bulk and (111) surface of a-Sn
G. P. Srivastava
J Phys C 15, 699-706 (1982).

Electronic structure and total energy of Si, Ge, and a-Sn by the self-consistent local pseudopotential method
G. P. Srivastava
J Phys C 15, 707-719 (1982).

Self-consistent pseudopotential calculations of the equilibrium bulk properties of diamond-type semiconductors
G. P. Srivastava
J Phys C 15, L739-L742 (1982).

Self-consistent nonlocal pseudopotential calculations for the ground state properties of a-Sn
G. P. Srivastava
J Phys C 16, 1649 (1983).

The electronic structure of cleaved indium phosphide (110) surfaces: experiment and theory
G. P. Srivastava, I Singh, V Montgomery and R H Williams
J Phys C 16, 3627-3640 (1983).

Broyden's method for self-consistent-field convergence acceleration
G. P. Srivastava
J Phys A 17, L317-L321 (1984).

Atomic structure and ordering in semiconductor alloys
G. P. Srivastava, J L Martins and A. Zunger
Phys. Rev. B 31, 2561-2564 (Rapid Commun) (1985).

p-bonded chain structure for Ge on Si(111)
G. P. Srivastava, S Ciraci and I P Batra
Surf. Sci. 183, L290-L296 (1987).

The electronic band structure of (GaAs)n(AlAs)n and (GaAs)n(ZnSe)n superlattices
G. P. Srivastava and A. C. Ferraz
Surf. Sci. 189/190, 913-918 (1987).

Reply to "Comments on 'Atomic structure and ordering in semiconductor alloys' "
G. P. Srivastava, J L Martins and A. Zunger
Phys. Rev. B 36, 2902-2905 (1987).

Electronic band structure of monolayer thin semiconductor superlattices
G. P. Srivastava
Vacuum 36, 233-236 (1988).

Phonon dispersion in the [110] direction: a testing ground for phenomenological models of germanium
G. P. Srivastava and K Kunc
J Phys C 21, 5087-5106 (1988).

Erratum: Atomic structure and ordering in semiconductor alloys
G. P. Srivastava, J L Martins and A. Zunger
Phys. Rev. B 38, 12694 (1988).

Report on a Kellar plan course in first-year university physics
G. P. Srivastava
Phys Educ 24, 295-299 (1989).

Low lying conduction states in (GaAs)n(AlAs)n superlattices
G. P. Srivastava, R J Gordon and Z. Ikonic
Superlattices and Microstructures 9, 43-46 (1991).

Electronic states on InP(110)-Sb(1ML)
G. P. Srivastava and R P Martin
J. Phys.: Condens. Matter 4, 2007-2026 (1992).

Atomic geometries of InP(110)-Sb(1ML) and GaAs(110)-Sb(1ML)
G. P. Srivastava
Phys. Rev. B 46, 7300-7303 (rapid commun) (1992).

Atomic geometry and electronic structure of a monolayer of Sb on (110) GaAs and InP
G. P. Srivastava
Phys. Rev. B 47, 16616-19 (1993).

Atomic geometry, electronic states and bonding at the GaP(110)-Sb(1 ML) interface
G. P. Srivastava
J. Phys.: Condens. Matter 5, 4695-4710 (1993).

Atomic geometry, electronic states and bonding at the GaP(110)-Sb(1 ML) interface
G. P. Srivastava
J. Phys.: Condens. Matter 5, 4695-4710 (1993).

Ab initio molecular dynamics study of InP(110)-Sb(1 ML)
G. P. Srivastava
Surf. Sci. 307-309, 326-334 (1994).

Chemisorption of antimony on III-V(110) surfaces
G. P. Srivastava
Surf. Rev. Lett. 1, 677-680 (1994).

Theoretical studies of the GaAs(001)-Ge(2x1) and (1x2) structures
G. P. Srivastava and S. J. Jenkins
Surf. Sci. 352-354, 416 (1996).
  Abstract

Atomic geometry and bonding of the GaAs(001)-beta2(2x4) surface from ab initio pseudopotential calculations
G. P. Srivastava and S. J. Jenkins
Phys. Rev. B 53, 12589-12592 (1996).
  Abstract

Atomic structure and bonding on GaAs(001)/Sb(2x4)
G. P. Srivastava and S. J. Jenkins
Surf. Sci. 377, 23-26 (1997)
  Abstract

Semiconductor surface reconstruction
G. P. Srivastava
Reports on Progress in Physics 60, 561-613 (1997)

Atomic structure of the GaAs(001)-beta2(2X4) surface
G. P. Srivastava and S. J. Jenkins
Surf. Rev. Lett. 5, 219-222 (1998)

Theoretical modelling of semiconductor surfaces and interfaces
G. P. Srivastava
Vacuum 57, 121-129 (2000)

Geometry, electrons, phonons and reactions on Si(001) surfaces
G. P. Srivastava
Comp Phys Commun 137 (2001) 143-162

Theory of thermal conduction in nonmetals
G. P. Srivastava
MRS Bull 26 (2001) 445-450

Forward to Professor G. P. Srivastava publications by first author Srivastava, GP (5 publications).

                                                                                                                                                                                                                                                                       

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