Atomic structure and bonding on GaAs(001)/Sb(2x4)
To be published in Surface Science (1997)
Semiconductor Physics Group, Department of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL, United Kingdom
We present results of ab initio pseudopotential calculations
for the (2x4) reconstruction of the Sb-terminated GaAs(001)
surface. Using the structural model recently proposed by Moriarty
et al [1] we provide a detailed analysis of the atomic geometry
and the nature of chemical bonding at the surface. The geometrical
results are compared with the x-ray standing wave analysis of Sugiyama
et al [2].
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P.Moriarty, P.H.Beton, Y.-R.Ma, M.Henini, and D.A.Woolf, Phys. Rev. B 53, 16 148 (1996)
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M.Sugiyama, S.Maeyama, F.Maeda, and M.Oshima, Phys. Rev. B 52, 2678 (1995)
Stephen Jenkins
Last modified: Fri Dec 6 13:20:41 GMT 1996