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Professor G. P. Srivastava publications in Solid State Commun

Up to the index or back to Professor G. P. Srivastava publications in SemiInsulating IIIV Materials (1 publication).

Electron-phonon interaction and superconductivity in SnAs with the sodium chloride crystal structure
H. M. Tutuncu and G. P. Srivastava
Solid State Commun. 221 (2015) 24-27.

Identification of specific phonon contributions in BCS-type superconductivity of boride-carbide crystals with a layer-like structure
H. Y. Uzunok, H. M. Tutuncu, S. Ozer, S. Ugur and G. P. Srivastava
Solid State Commun. 206 (2015) 1.

Characterisation of optical phonons within epitaxial Ge2Sb2Te5/InAs(111) structures
R. A. Alsaigh, L. R. Shelford, H. J. Mohamad, A. Shalini, U. A. S. Al-Jarah, V. Bragaglia, A. Giussani, R. Calarco, G. P. Srivastava, and R. J. Hicken
Solid State Commun 351 (2022) 114788:1-10

Choice of trial function for the calculation of thermal resistivity due to electron-phonon scattering
G. P. Srivastava and G S Verma
Solid State Commun 9 2077-2079 (1971).

A model pseudopotential calculation of the electronic structure of Si(111) 1x1 surface
G. P. Srivastava
Solid State Commun 33, 1209-1212 (1980).

On the linewidth of G- and X-like intersubband optical transitions in semiconductor quantum wells
Z. Ikonic, J. C. Inkson and G. P. Srivastava
Solid State Commun 73, 421-424 (1990).

On level splitting by intervalley interference effects in semiconductor quantum wells
Z. Ikonic, J. C. Inkson and G. P. Srivastava
Solid State Commun 76, 117-119 (1990).

Intersubband absorption line broadening in In0.53Ga0.47As/In0.52Al0.48As quantum wells: a pseudopotential calculation
Z. Ikonic, G. P. Srivastava and J. C. Inkson
Solid State Commun 81, 841-843 (1992).

Calculation of X-valley intersubband optical transitions linewidth in [111] grown AlAs/(GaAl)As quantum wells
Z. Ikonic, G. P. Srivastava and J. C. Inkson
Solid State Commun 85, 327-330 (1993).

Twinning superlattices
Z. Ikonic, G. P. Srivastava and J. C. Inkson
Solid State Commun 86, 799-802 (1993).

First-principles calculations of interface phonons of an epitaxial Sb monolayer on GaAs(110) and InP(110)
W G Schmidt and G. P. Srivastava
Solid State Commun 89, 345-348 (1994).

III--N(110) Surface Relaxation and its Dependence on the Chemical Bonding
R. Miotto, G. P. Srivastava and A. C. Ferraz
Solid State Commun. 115, 67-71 (2000)

Forward to Professor G. P. Srivastava publications in Solid State Phys and Nucl Phys (3 publications).

                                                                                                                                                                                                                                                                       

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