PHY3129 Device Physics

2007-2008

Code: PHY3129
Title: Device Physics
Instructors: Prof. R.J. Hicken
CATS credits: 10
ECTS credits: 5
Availability: unrestricted
Level: 3
Pre-requisites: N/A
Co-requisites: Solid State Physics I (PHY3102)
Background Assumed: N/A
Duration: Semester I
Directed Study Time: 22 lectures
Private Study Time: 78 hours
Assessment Tasks Time: -
Observation report: 2003/04 RJH (AKS)

Aims

This module aims to examine the physics (e.g. electronic and optical properties) of the materials used to make electronic and optoelectronic devices and to study the way these properties are exploited to produce commercial devices. Particular attention is paid to the relationship between material properties and device function. This module assumes a knowledge of basic solid state physics so the lectures are organised so that stage 3 students taking the module have time to acquire this background.

Intended Learning Outcomes

Students will be able to describe and explain the function of the basic devices of optoelectronics: optical fibres, liquid crystal displays, p-n junctions, transistors of various types, light-emitting and tunnelling diodes.

Transferable Skills

Organisation of time in a module that is not continuously assessed.

Learning and Teaching Methods

Lectures and problems classes.

Assignments

There are no set assignments during the semester.

Assessment

One 90-minute examination (100%).

Syllabus Plan and Content

1. Display Devices
   1. The human viewer and the implications for a display device. Electroluminescent, gas-plasma and light-emitting-diode displays.
   2. Nematic, smectic and cholesteric liquid crystals. Liquid crystal devices, including the twisted and supertwisted nematic cells.
2. Optical Waveguides
   1. Reflection at a dielectric interface, the Fresnel coefficients, total internal reflection and guiding in single mode and mulitmode planar waveguides. Optical fibres: numerical aperture; dispersion and loss; materials and fabrication.
   2. Discussion of some of the following: waveguide couplers, fibre amplifiers, optical time-domain reflectometry, preserving polarisation.
3. Excess Carriers in Semiconductors
   1. Revision of relevant solid state physics: main properties of electrons in semiconductors.
   2. Generation, injection, radiative and non-radiative recombination.
   3. Motion of excess carriers. Drift, diffusion and the Einstein relation.
   4. Quasi-Fermi levels for excess carriers.
4. Semiconductor Devices
   1. The PN junction: Built-in potential, depletion width and capacitance; I-V characteristic and Shockley's law; The light-emitting diode (LED); The tunnel (Esaki) diode.
   2. The bipolar transistor: Device structure and the distribution of currents;
   3. The MESFET: Device structure and band diagrams; I-V characteristics in linear and saturation regimes; Depletion layer thickness and capacitance; using capacitance measurements for determining the doping profile.
   4. The MOSFET: Device structure and band diagram; accumulation, depletion and inversion regimes; capacitance of the MOS diode at low and high frequencies.

Core Text

Not applicable

Supplementary Text(s)

Neamen D.A. (1992), Semiconductor Physics and Devices : Basic Principles, Irwin (UL: 537.622 NEA)
Reitz J.R., Milford F.J. and Christy R.W. (1993), Foundations of Electromagnetic Theory (4^th edition), Addison-Wesley, ISBN 0-201-52624-7 (UL: 530.141 REI)
Smith S.D. , Optoelectronic Devices, Prentice Hall International, ISBN 0-13-143769-0 (UL: 621.36 SMI)
Sze S.M. (1981), Physics of Semiconductor Devices, Wiley (UL: 537.622 SZE)
Wilson J. and Hawkes J.F.B. , Optoelectronics: An Introduction (3^rd edition), Prentice-Hall (UL: 621.36 WIL)

Formative Mechanisms

Students are expected to attempt problems set on a regular basis to re-enforce the material covered in lectures and to prepare answers to questions later discussed in the problems classes. Sample solutions are made available in the Physics library.

Evaluation Mechanisms

The module will be evaluated using information gathered via the student representation mechanisms, the staff peer appraisal scheme, and measures of student attainment based on summative assessment.