PHY2020 Lasers and Materials for Quantum Applications

2007-2008

Code: PHY2020
Title: Lasers and Materials for Quantum Applications
Instructors: Dr A.S. Plaut
CATS credits: 10
ECTS credits: 5
Availability: unrestricted
Level: 2
Pre-requisites: N/A
Co-requisites: N/A
Background Assumed: Properties of Matter (PHY1003) and Quantum Physics I (PHY2002)
Duration: Semester II
Directed Study Time: 22 hours
Private Study Time: 78 hours
Assessment Tasks Time: -
Observation report: 2001/02 FYO

Aims

We are now entering the age of quantum optoelectronics: optical-signal processing, high-power laser sources, optical amplifiers, single-photon manipulation, quantum confined-electron devices, etc.. This module will emphasize how our understanding of light and matter may be used to provide assorted optoelectronic devices, and also how they in turn may enhance our understanding of light and matter.

This module is intended as an introductory overview of the breadth of physics that is covered by the field of optoelectronics, while also acting as the first specialist course for the MPhys Quantum Science and Lasers (F341) and BSc Physics with Quantum and Laser Technology (F347) programmes.

Intended Learning Outcomes

A student should be able to:

Module Specific Skills

• Describe atomically precise crystal growth techniques, and their application to grow quantum well devices.
• Describe various surface/thin film analysis, optical and electrical characterisation techniques.
• Show diagrammatically the components of scanning/transmission electron microscopes and explain their operation.
• Explain how various different types of lasers work.

Discipline Specific Skills

• Select the appropriate surface science analysis technique in order to to accomplish a specified task.
• Use diagrams to illustrate the construction and operation of technical devices.

Personal and Key Skills

• Discuss, orally and in writing, technical information learnt from directed reading of journal articles.

Learning and Teaching Methods

Lectures (17×1hr), problem classes (2×1hr), self-study and group discussions (2×1hr) of various journal articles supplied during the module, laboratory visit (1hr).

Assignments

Tackle problems from sheets in advance of problem classes; extensive directed background reading

Assessment

One 90-minute examination (100%).

Syllabus Plan and Content

1. Designing and Building New Materials
   1. Molecular-beam epitaxy - Layout of an MBE reactor, Atomic-monolayer growth conditions
   2. Band-gap engineering
2. Materials Characterization
   1. Characterization techniques - Reflection high-energy electron diffraction (RHEED), Photoelectron spectroscopy, Auger electron spectroscopy, Secondary-ion mass spectroscopy, Optical spectroscopy, Electrical characterization
   2. Scanning Electron Microscopy, Transmission Electron Microscopy
3. Lasers and Amplifiers
   1. Absorption, spontaneous and stimulated emission, Einstein coefficients
   2. Three- and four-level systems
   3. Amplification and lasing - population inversion, optical gain and feedback
   4. Cavities and cavity modes
   5. Continuous wave, and pulsed operation
   6. Gas lasers
   7. Liquid lasers
   8. Solid lasers: PN junctions as LEDs and lasers; Double-heterojunction and quantum-well lasers; Blue-green semiconductor lasers
   9. Applications of lasers: nuclear fusion, data transmission, data storage, sensing

Core Text

Not applicable

Supplementary Text(s)

Svelto O. (1998), Principles of Lasers (4^th edition), Plenum Press, ISBN 0-306-45748-2 (UL: 535.58 SVE/X)
Wilson J. and Hawkes J.F.B. , Optoelectronics: An Introduction (3^rd edition), Prentice-Hall (UL: 621.36 WIL)
Jaros M. (1989), Physics and Applications of Semiconductor Microstructures, Clarendon, ISBN 0-198-53927-4 (UL: 537.622 JAR)

Formative Mechanisms

Students are encouraged to ask questions during and after the class. Students are able to monitor their learning by attempting problems, which are subsequently discussed in the problems classes.

Evaluation Mechanisms

The module will be evaluated using information gathered via the student representation mechanisms, the staff peer appraisal scheme, and measures of student attainment based on summative assessment.