Physical properties of semiconductors

Please read the notes following the table.

[ physical properties ] [ electronic properties ]

crystal lattice parameters density bulk modulus[5]
elements structure(a) at 300 K (Å) kg/m3 (GPa)
C D 3.56683 3515.25 442.3[6]
Si D 5.4310196(11)[3] 2329.002 97.9[7]
Ge D 5.6579060 5323.4 77.2[8]
Sn[2] D 6.48920 5765[4] 111[9]
IV-IV
SiC Z 4.3596 3166 211
aSiC[2] W a = 3.086
c = 15.117 		- -
SiC[4] W a = 3.076
c = 5.048 		- -
III-V
BN Z 3.6157[10] 3487.0 400[11]
BN[10] W a = 2.553
c = 4.228 		- -
BN H a = 2.5040
c = 6.6612 		2180 -
BP Z 4.5383 2970 165.0
BAs Z 4.777 5220 -
AlN Z 4.38[12] - -
AlN W a = 3.111
c = 4.981 		3255 -
AlP Z 5.4635 2401 86.0
AlAs Z 5.6605 3760 77.0
AlSb Z 6.1355 5613.7 58.2
GaN Z 4.511[13] - -
GaN W a = 3.1878
c = 5.1850[13] 		6095 -
GaP Z 5.4505 4138 88.7
GaAs Z 5.65325 5317.6 74.8[8]
GaSb Z 6.09593 5613.7 57.0
InN Z 4.980[14] - -
InN W a = 3.5446
c = 5.7034 		6810 -
InP Z 5.86875[4] 4787[4] 71.0
InAs Z 6.05838[4] 5667 60.0
InSb Z 6.47937 5774.7 47.4
II-VI
BeO[4] W a = 2.698
c = 4.380 		- -
BeS[4] Z 4.865 2360 -
BeSe[4] Z 5.139 4315 -
BeTe[4] Z 5.626 5090 -
BePo[4] Z 5.838 7300 -
ZnO W a = 3.24950
c = 5.2069[4] 		5675.26 -
ZnO[2] R 4.580 - -
ZnS Z 5.4102 4079 77.1
ZnS W a = 3.8226
c = 6.2605 		4084 -
ZnSe Z 5.6676 5266 62.4
ZnTe Z 6.1037 5636 51.0
ZnTe[4] W a = 4.27
c = 6.99 		- -
ZnPo[4] Z 6.309 - -
CdO R 4.689 8150 -
CdS Z 5.818 - 62.0
CdS W a = 4.1362
c = 6.714 		4820 -
CdSe Z 6.052 - 53.0
CdSe W a = 4.2999
c = 7.0109 		5810 -
CdTe Z 6.482 5870 42.4
HgS[4] Z 5.8517 7730 -
HgSe[4] Z 6.084 8250 50.0
HgTe[4] Z 6.4623 8170 42.3
IV-VI
PbS R 5.936 7597 -
PbSe R 6.117 8260 -
PbTe R 6.462 8219 -

Notes

(a) D = diamond, W = wurtzite, Z = zincblende, R = rocksalt, H = hexagonal

Whilst every effort is made to ensure the information given here is correct, it is possible there may be some mistakes. If you notice any errors, or have any suggestions, please contact the author.

References

Values are taken from ref. [1] unless rows, columns, or items are marked otherwise.

  1. Physics of Semiconductors and Their Heterostructures, Jasprit Singh, McGraw-Hill, New York (1993).
  2. Physics of Semiconductor Devices, 2nd edition, S. M. Sze, John Wiley & Sons, New York (1981).
  3. Journal of Research of the National Bureau of Standards, 92(2), March-April 1987. <http://physics.nist.gov/cuu/>
  4. CRC Handbook of Chemistry and Physics, 75th edition, ed. D. R. Lide, CRC Press, Boca Raton (1913-1995).
  5. Landolt-Börnstein, Numerical Data and Functional Relationships in Science and Technology-Crystal and Solid State Physics, Vol. 18, Springer, Berlin (1984).
  6. McSkimin and Andreath, J. Appl. Phys, 43, 2944 (1972).
  7. McSkimin and Andreath, J. Appl. Phys, 35, 2161 (1964).
  8. "The theory of the cohesive energies of solids", G. P. Srivastava and D. Weaire, Advances in Physics, 36(4), 463-617 (1987)
  9. Introduction to solid state physics, 6th edition, C. Kittel, John Wiley & Sons, New York (1986).
  10. T. Soma, A. Sawaoka, and S. Saito, "Characterization of wurtzite type boron nitride synthesized by shock compression", Mater. Res. Bull., 9(6), 755-762 (1974).
  11. M. Grimsditch, E. S. Zouboulis, and A. Polian, "Elastic constants of boron nitride", J. Appl. Phys. 76(2), 832-834 (1994).
  12. I. Petrov, E. Mojab, R. C. Powell, J. E. Greene, L. Hultman, and J.-E. Sundgren, "Synthesis of metastable epitaxial zinc-blende-structure AlN by solid-state reaction", Appl. Phys. Lett. 60(20), 2491-2493 (1992).
  13. M. Leszczynski, H. Teisseyre, T. Suski, I. Grzegory, M. Bockowski, J. Jun, S. Porowski, K. Pakula, J. M. Baranowski, C. T. Foxon, and T. S. Cheng, "Lattice parameters of gallium nitride", Appl. Phys. Lett. 69(1), 73-75 (1996).
  14. Chin-Yu Yeh, Z. W. Lu, S. Froyen, and Alex Zunger, "Zinc-blende polytypism in semiconductors", Phys. Rev B, 46(16), 10086-1097 (1992).
Christopher D. Latham1st October 2002HTML 4.0