Electronic properties of semiconductors

Please read the notes following the table.

[ physical properties ] [ electronic properties ]

band bandgap Eg (eV) relative
elements type(a) 0 K[2] 300 K permittivity
C I 5.48 5.50 5.570
Si I 1.17 1.1242 11.9
Ge I 0.74 0.664 16.2
Sn[2] D 0.082 - -
IV-IV
c-SiC I 2.42[4] 2.416 9.72
aSiC[2] I 3.03 2.996 10.0
h-SiC I 3.33[4] - -
III-V
c-BN I - 6.4 7.1
h-BN I - 5.2 || = 5.06
_|_ = 6.85
BP I - 2.4 11
BAs - - - -
AlN D - 6.2 (9.14)
AlP I - 2.45 9.8
AlAs I 2.36 2.153 10.06
AlSb I 1.68 1.615 12.04
c-GaN D 3.30[5] - -
h-GaN D 3.50[5] 3.44 || = 10.4
_|_ = 9.5
GaP I 2.34 2.272 11.11
GaAs D 1.52 1.4241 13.18
GaSb D 0.81 0.75 15.69
c-InN - - - -
h-InN D - 0.7(b)[6] -
InP D 1.42 1.344 12.56
InAs D 0.42 0.354 15.15
InSb D 0.23 0.230 16.8
II-VI
BeO[3] - - - -
BeS[3] - - - -
BeSe[3] - - - -
BeTe[3] - - - -
BePo[3] - - - -
h-ZnO D - 3.44 || = 8.75
_|_ = 7.8
c-ZnO[2] D 3.42 3.35 9.0
c-ZnS D 3.84 3.68 8.9
h-ZnS D - 3.9107 (9.6)
ZnSe D - 2.8215 9.1
c-ZnTe D - 2.3941 8.7
h-ZnTe[3] - - - -
ZnPo[3] - - - -
CdO I - 0.84 21.0
c-CdS D 2.56 2.50 -
h-CdS D - 2.501 (9.38)
c-CdSe D - - -
h-CdSe D 1.85 1.751 || = 10.16
_|_ = 9.29
CdTe D - 1.475 10.2
HgS[3] - - - -
HgSe[3] - - - -
HgTe[3] - - - -
IV-VI
PbS D* 0.286 0.41 169
PbSe D* - 0.278 210
PbTe D* 0.19 0.310 414

Notes

(a) I = indirect, D = direct, * = gap at L point.

(b) The previously accepted value for Eg in InN of about 1.89 eV is now thought to be far too large: see ref. [6].

Whilst every effort is made to ensure the information given here is correct, it is possible there may be some mistakes. If you notice any errors, or have any suggestions, please contact the author.

References

Values are taken from ref. [1] unless rows, columns, or items are marked otherwise.

  1. Physics of Semiconductors and Their Heterostructures, Jasprit Singh, McGraw-Hill, New York (1993).
  2. Physics of Semiconductor Devices, 2nd edition, S. M. Sze, John Wiley & Sons, New York (1981).
  3. CRC Handbook of Chemistry and Physics, 75th edition, ed. D. R. Lide, CRC Press, Boca Raton (1913-1995).
  4. Chin-Yu Yeh, Z. W. Lu, S. Froyen, and Alex Zunger, "Zinc-blende polytypism in semiconductors", Phys. Rev B, 46(16), 10086-1097 (1992).
  5. J. Menniger, U. Jahn, O. Brandt, H. Yang, and K. Ploog, "Identification of optical transitions in cubic and hexagonal GaN by spatially resolved cathodoluminescence", Phys. Rev. B, 53(4), 1881-1885 (1996).
  6. V. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev, S. V. Ivanov, V. V. Vekshin, F. Bechstedt, J. Furthmüller, H. Harima, A. V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul, E. E. Haller, "Band gap of InN and In-rich InxGa1-xN alloys (0.36 < x < 1)", physica status solidi (b), 230(2), R4-R6 (2002).
Christopher D. Latham27th December 2005HTML 4.0