Professor G. P. Srivastava publications by first author Cakmak, M.

Ab initio study of the adsorption of In on the Ge(001) surface
M. Cakmak and G. P. Srivastava
Surf Sci 566-568 (2004) 931-36

An ab initio study of the Te surfactant on Ge/Si(001)
M. Cakmak, G. P.~Srivastava, and S. Ellialtioglu
Surf Sci 966-968 (2004) 719-22

A theoretical study of sulphur adsorption on InP(110)
M. Cakmak and G. P. Srivastava
Surf. Sci. 3777, 592-596 (1997)

Calculation of atomic geometry, electronic states and bonding for the S-deposited InP(110) surface
M. Cakmak and G. P. Srivastava
Phys. Rev. B 56, 1928-1935 (1997)

An ab initio study of atomic geometry, electronic states and bonding for H₂S-adsorption on III-V(110)-(1X1) surfaces
M. Cakmak and G. P. Srivastava
Phys. Rev. B 57, 4486 (1998)

An ab initio calculation of the adsorption of H₂S onto InP(110)-(1X1) surface
M. Cakmak and G. P. Srivastava
Appl Surf Sci 123/124, 52-55 (1998)

Theoretical study of the GaAs(110)-H₂S surface
M. Cakmak and G. P. Srivastava
Surf. Sci. 402-404, 658-662 (1998)

Adsorption and desorption of S on and off Si(001) studied by Ab initio Density Functional Theory
M. Cakmak and G. P. Srivastava
J. Appl. Phys. 84, 6070 (1998)

Ab initio study of the adsorption of H2S onto the Si(001) surface
M. Cakmak and G. P. Srivastava
Surf Sci 433-435 (1999) 420-424

Adsorption of partially and fully dissociated H2S molecule on the Si(001) and Ge(001) surfaces
M. Cakmak and G. P. Srivastava
Phys Rev B 60 (1999) 5497-5505

Adsorption of partially and fully dissociated H2S molecule on the Si(001) and Ge(001) surfaces
M. Cakmak and G. P. Srivastava
Phys. Rev. B 60, 5497 (1999)

Structure and energetics of segregated and nonsegregated H:Ge(001)/Si and Cl:Ge(001)/Si
M. Cakmak, S. C. A. Gay and G. P. Srivastava
Surf. Sci. 454-456, 166-171 (2000)

Dissociative adsorption of Si$_2$H$_6$ on the Si(001) surface
M. Cakmak and G. P. Srivastava
Phys. Rev. B 61, 10216-22 (2000)

Forward to Professor G. P. Srivastava publications by first author Cangozen, M. (1 publication).