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Professor G. P. Srivastava publications by Williams, RH

Up to the index or back to Professor G. P. Srivastava publications by Weymouth, A.J. (6 publications).

Photoelectron Spectroscopy of Solids and Their Surfaces (REVIEW ARTICLE)
R H Williams, G. P. Srivastava and I T McGovern
Reports on Progress in Physics 43, 1357-1414 (1980).

Electronic structure of Si(111) surfaces (check title)
R H Williams, G P Srivastava and I T McGovern
`Electron Properties of Surfaces' (compiled by M Prutton, Publ: Adam Hilger, Bristol) (1985) pp: 71-133

Angle-resolved photoelectron spectroscopy -the cleaved (110) surface of indium phosphide
A McKinley, G. P. Srivastava and R H Williams
J Phys C 13, 1581-91 (1980).

The electronic structure of cleaved silicon (111) surfaces following adsorption of aluminium
A W Parke, A McKinley, R H Williams and G. P. Srivastava
J Phys C 13, L369-K374 (1980).

The influence of adsorbate layers in controlling Schottky barriers
V Montgomery, R H Williams and G. P. Srivastava
J Phys C 14, L191-L194 (1981).

Laser cleaned silicon surfaces-electronic structure and surface crystallography
A McKinley, R H Williams, A W Parke and G. P. Srivastava
Vacuum 31, 549-552 (1981).

The electronic structure of cleaved indium phosphide (110) surfaces: experiment and theory
G. P. Srivastava, I Singh, V Montgomery and R H Williams
J Phys C 16, 3627-3640 (1983).

Angle-resolved photoemission from the cleaved (110) surface of cadmium telluride
T P Humphreys, G. P. Srivastava and R H Williams
J Phys C 19, 1259-1271 (1986).

Forward to Professor G. P. Srivastava publications by Yalcn, B.G. (1 publication).

                                                                                                                                                                                                                                                                       

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