Professor G. P. Srivastava publications by Williams, RH

Photoelectron Spectroscopy of Solids and Their Surfaces (REVIEW ARTICLE)
R H Williams, G. P. Srivastava and I T McGovern
Reports on Progress in Physics 43, 1357-1414 (1980).

Electronic structure of Si(111) surfaces (check title)
R H Williams, G P Srivastava and I T McGovern
`Electron Properties of Surfaces' (compiled by M Prutton, Publ: Adam Hilger, Bristol) (1985) pp: 71-133

Angle-resolved photoelectron spectroscopy -the cleaved (110) surface of indium phosphide
A McKinley, G. P. Srivastava and R H Williams
J Phys C 13, 1581-91 (1980).

The electronic structure of cleaved silicon (111) surfaces following adsorption of aluminium
A W Parke, A McKinley, R H Williams and G. P. Srivastava
J Phys C 13, L369-K374 (1980).

The influence of adsorbate layers in controlling Schottky barriers
V Montgomery, R H Williams and G. P. Srivastava
J Phys C 14, L191-L194 (1981).

Laser cleaned silicon surfaces-electronic structure and surface crystallography
A McKinley, R H Williams, A W Parke and G. P. Srivastava
Vacuum 31, 549-552 (1981).

The electronic structure of cleaved indium phosphide (110) surfaces: experiment and theory
G. P. Srivastava, I Singh, V Montgomery and R H Williams
J Phys C 16, 3627-3640 (1983).

Angle-resolved photoemission from the cleaved (110) surface of cadmium telluride
T P Humphreys, G. P. Srivastava and R H Williams
J Phys C 19, 1259-1271 (1986).

Forward to Professor G. P. Srivastava publications by Xiao, N. (1 publication).