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Professor G. P. Srivastava publications by Cakmak, M.

Up to the index or back to Professor G. P. Srivastava publications by Cakmak, M (2 publications).

Ab initio study of the adsorption of In on the Ge(001) surface
M. Cakmak and G. P. Srivastava
Surf Sci 566-568 (2004) 931-36

Ab initio study of the one-monolayer Sb/Ge(001) interface
R. Shaltaf, M. Cakmak, E. Mete, G.P. Srivastava, and S. Ellialtioglu
Surf Sci 566-568 (2004) 956-60

An ab initio study of the Te surfactant on Ge/Si(001)
M. Cakmak, G. P.~Srivastava, and S. Ellialtioglu
Surf Sci 966-968 (2004) 719-22

Atomic and electronic structure of S-terminated GaAs(001) Surface
D. Usanmaz, G. P. Srivastava and M. Cakmak
J. Appl. Phys. 108 (2010) 063731:1-6

Adsorption of S on Si(111) with M_4x4 superstructure
C. Tayran, M. Cakmak and G. P. Srivastava
Surf Sci 701 (2020) 121694:1-5

Quantum-well states for uniform Ag layers on the Ga-induced Si(111)--(R3xR3)R30 surface
C. Tayran, M. Cakmak and G. P. Srivastava
Surf Sci 701 (2020) 121684:1-6

Atomic and electronic structures of Sn covered W(110) surface
C. Tayran, M. Cakmak and G. P. Srivastava
Euro. Phys. Journal B 93 (2020) 15:1-7

A theoretical study of sulphur adsorption on InP(110)
M. Cakmak and G. P. Srivastava
Surf. Sci. 3777, 592-596 (1997)

Calculation of atomic geometry, electronic states and bonding for the S-deposited InP(110) surface
M. Cakmak and G. P. Srivastava
Phys. Rev. B 56, 1928-1935 (1997)

An ab initio study of atomic geometry, electronic states and bonding for H2S-adsorption on III-V(110)-(1X1) surfaces
M. Cakmak and G. P. Srivastava
Phys. Rev. B 57, 4486 (1998)

An ab initio calculation of the adsorption of H2S onto InP(110)-(1X1) surface
M. Cakmak and G. P. Srivastava
Appl Surf Sci 123/124, 52-55 (1998)

Structural, electronic and vibrational properties of the InSb(110) surface
H. M. Tütüncü, M. Cakmak and G. P. Srivastava
Appl Surf Sci 123/124, 146-150 (1998)

Theoretical study of the GaAs(110)-H2S surface
M. Cakmak and G. P. Srivastava
Surf. Sci. 402-404, 658-662 (1998)

Adsorption and desorption of S on and off Si(001) studied by Ab initio Density Functional Theory
M. Cakmak and G. P. Srivastava
J. Appl. Phys. 84, 6070 (1998)

Ab initio study of the adsorption of H2S onto the Si(001) surface
M. Cakmak and G. P. Srivastava
Surf Sci 433-435 (1999) 420-424

Adsorption of partially and fully dissociated H2S molecule on the Si(001) and Ge(001) surfaces
M. Cakmak and G. P. Srivastava
Phys Rev B 60 (1999) 5497-5505

Adsorption of partially and fully dissociated H2S molecule on the Si(001) and Ge(001) surfaces
M. Cakmak and G. P. Srivastava
Phys. Rev. B 60, 5497 (1999)

Structure and energetics of segregated and nonsegregated H:Ge(001)/Si and Cl:Ge(001)/Si
M. Cakmak, S. C. A. Gay and G. P. Srivastava
Surf. Sci. 454-456, 166-171 (2000)

Comparative study of Bi overlayers on III-Sb(110($1\times 1$) surfaces
S. C. A. Gay, M. Cakmak and G. P. Srivastava
Surf. Sci. 454-456, 26-29 (2000)

Dissociative adsorption of Si$_2$H$_6$ on the Si(001) surface
M. Cakmak and G. P. Srivastava
Phys. Rev. B 61, 10216-22 (2000)

Forward to Professor G. P. Srivastava publications by Calarco, R. (2 publications).

                                                                                                                                                                                                                                                                       

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