Oxygen '96

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The workshop will take place on the main University of Exeter campus. Participants will be accommodated in Lopes Hall of residence on the campus. All lectures will take place in the main theatre in the Engineering Building. A conference desk will be established in the Foyer of Engineering Building from Tuesday until Friday, 9:00-10:00. The poster sessions will take place in Lopes Hall. (A map of the campus is available, the Engineering building and Lopes halls of residence are on the right).

Urgent messages can be left with the secretary of the Physics Department during the conference:

Tel: +44 1392 264151
Fax: +44 1392 264111

The delegates phone number at Lopes Hall is

Tel: +44 1392 263891

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Monday - Tuesday - Wednesday - Thursday - Friday

Monday March 25

Participants arrive; a conference minibus service will run between Exeter St. David's station and Lopes Hall.

17:00-20:00	Registration: Foyer of Lopes Hall
19:00-21:00	Buffet Reception: Lopes Hall
21:00-23:30	Registration: Foyer of Lopes Hall

Tuesday March 26

7:30-8:30	Breakfast: Lopes Hall
9:00-9:15	Introduction by the Vice Chancellor, Sir Geoffrey Holland
9:15-9:30	The oxygen problem, R Jones
9:30-10:15	Properties of oxygen and oxygen-related defects in silicon determined from stress-induced alignment studies, G. D. Watkins Sherman Fairchild Laboratory, Lehigh University, Bethlehem, USA
10:15-10:30	Discussion
10:30-11:00	Coffee
11:00-11:45	The initial stages of oxygen aggregation in silicon: hydrogen, dimers and self-interstitials, R. C. Newman, IRC Semiconductor Materials, Imperial College, London
11:45-12:00	Discussion
12:00-12:45	Infrared studies of early stages of oxygen clustering in silicon, J. L. Linström, T. Hallberg Department of Physics and Measurement, Linköping University, Sweden
12:45-13:00	Discussion
13:00-14:00	Lunch: Engineering Building, Rms 101-103
14:00-14:45	Magnetic resonance investigations of thermal donors in silicon, C. A. J. Ammerlaan Van der Waals-Zeeman Laboratorium, Universiteit van Amsterdam, The Netherlands
14:45-15:00	Discussion
15:00-15:45	Magnetic Resonance on Heat Treatment Centres in Silicon, M. Spaeth Fachbereich Physik,Universität Paderborn, Germany
15:45-16:00	Discussion
16:00-16:30	Tea
16:30-17:15	Effect of hydrogen on oxygen-related defect reactions in silicon at elevated temperatures, V. P. Markevich, L. I. Murin Institute of Solid-State Physics and Semiconductors, Academy of Sciences of the Belarus, Minsk, Belarus
17:15-17:30	Discussion
17:30-18:15	Passivation of thermal donors, J. Weber Max Planck Institute, Stuttgart, Germany
18:15-18:30	Discussion
19:30-20:30	Dinner: Lopes Hall
20:30-	Poster Session and Bar

Wednesday March 27

7:30-8:30	Breakfast: Lopes Hall
9:00-9:45	Theoretical studies of vacancy-oxygen defects and oxygen diffusion, C. P. Ewels, R. Jones, Department of Physics, Exeter, UK S. Öberg, Department of Mathematics, University of Luleå, Sweden
9:45-10:00	Discussion
10:00-10:45	The role of trivalent oxygen in electrically active complexes, P. Deák Physical Institute of the Technical University of Budapest, Budapest, Hungary
10:45-11:00	Discussion
11:00-11:30	Coffee
11:30-12:15	Hydrogen oxygen interactions in silicon, S. Estreicher Physics Department, Texas-Tech, USA, Y. K. Park, Physics Department, University of California
12:15-12:30	Discussion
12:30-14:00	Lunch: Engineering Building, Rms 101-103
14:00-14:45	Oxygen Diffusion in Si -- a very complex simple jump, M. Ramamoorthy and S. T. Pantelides Department of Physics and Astronomy, Vanderbilt University, Nashville, USA
14:45-15:00	Discussion
15:00-15:45	Interstitial oxygen, vacancies-oxygen, Si-interstitial-oxygen defects, J. Chadi NEC, Princeton, USA
15:45-16:00	Discussion
16:00-16:30	Tea
16:30-17:15	Generation of thermal donors, nitrogen-oxygen complexes and hydrogen-oxygen complexes in Si, M. Suezawa Institute for Materials Research, Tohoku University, Sendai, Japan
17:15-17:30	Discussion
17:30-18:15	The electronic structure of the oxygen donor in Si from piezospectroscopy, M. Stavola Sherman Fairchild Laboratory, Lehigh University, Bethlehem, USA
18:15-18:30	Discussion
19:30-20:30	Dinner: Lopes Hall
20:30-	Poster Session and Bar

Thursday March 28

9:00-9:45	Low temperature diffusion and agglomeration processes of oxygen in silicon, U. Gösele Max Planck Inst. of Microstructural Physics, Halle, Germany
9:45-10:00	Discussion
10:00-10:45	Relation between grown-in defects and oxygen precipitates in Czochralski silicon, K. Sumino Nippon Steel Co., Japan
10:45-11:00	Discussion
11:00-11:30	Coffee
11:30-12:15	Precipitation kinetics of oxygen and transition metals, E. R. Weber University of California, Berkeley, USA
12:15-12:30	Discussion
12:30-14:00	Lunch: Engineering Building, Rms 101-103
14:00-17:45	Conference Trips
19:30-20:00	Reception for Banquet
20:00-	Conference Banquet: Reed Hall Bar until midnight

Friday March 29

9:00-9:45	Various configurations of isolated oxygen in semiconductors, B. Pajot Groupe de Physique des Solides, Université Denis Diderot, Paris, France
9:45-10:00	Discussion
10:00-10:45	Oxygen related luminescence centres created in Czochralski silicon, E. C. Lightowlers, G. Davies King's College, London
10:45-11:00	Discussion
11:00-11:30	Coffee
11:30-12:00	Summary and Conclusion
12:00	Lunch: Engineering Building, Rms 101-103

Ferry participants to station.

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Last modified: Fri Mar 15 18:48:01 GMT 1996 by Chris Ewels