Oxygen '96
Early Stages of Oxygen Precipitation in Silicon
PRECIPITATION KINETICS OF OXYGEN AND TRANSITION METALS IN
SILICON
Department of Materials Science University of California,
Berkeley, CA 94720 (e-mail: weber@garnet.berkeley.edu)
Keywords: nuclei for precipitation , precipitation kinetics,
transition metals, gettering, internal gettering, carbon
Oxygen precipitation is the key step to effective internal
gettering of transition metals in silicon. During oxygen
precipitation native lattice defects are formed such as
self-interstitials or dislocations, making it difficult to determine
the detailed gettering mechanism.
Quantitative evaluation of the
precipitation kinetics gives insight into the size and density of the
precipitation nuclei. Comparison with the precipitation kinetics of
mobile, supersaturated transition metals allows to decide whether the
oxygen precipitates serve as preferred nucleation sites for metal
precipitation and gettering.
Detailed studies of oxygen and
transition metal precipitation kinetics in single- and
multi-crystalline silicon with different content of carbon and
microdefects and subjected to different thermal treatment schedules
were performed. The results were combined with defect analysis by
electron microscopy and other characterisation techniques. In
single-crystal Cz-Si, the precipitation kinetics of transition metals
and oxygen are similar, allowing to directly identify oxygen
precipitate nuclei as the sites of transition metal gettering.
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Last modified: Wed Feb 28 19:00:20 GMT 1996
JG
