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Oxygen '96

Early Stages of Oxygen Precipitation in Silicon

OXYGEN GETTERING AND THERMAL DONOR FORMATION AT POST-IMPLANTATION ANNEALING OF SILICON

A. G. Ulyashin (a) Yu. A. Bumay (a), A. I. Ivanov (a), V. S. Varichenko (b), A. M. Zaitsev (b), N. M. Kazychits (b) and W. R. Fahrner (c)

(a) Belorussian State Polytechnical Academy, 65 Skarina ave., 220027 Minsk, Belarus
(b) Belorussian State University, Minsk, Belarus
(c) University of Hagen, German

An effect of the oxygen gettering in buried layers formed by 160 keV hydrogen and 210 MeV krypton ion implantation in Czochralski-grown silicon has been investigated. Hydrogen and krypton have been implanted at doses of 3x1016 cm2 and 3x1014 cm2 respectively. After a subsequent annealing at different temperatures up to 1100 degrees C the samples have been examined by secondary ion mass spectrometry in order to measure the hydrogen and oxygen concentration distribution profiles. Spreading resistance technique has been used to obtain the resistivity depth profiles on the annealed samples. It has been found that the buried defect layer could be an effective getter for oxygen atoms by an appropriate heat treatment. The correlations between the dependencies of the buried layer resistance versus annealing temperature and appearance of the thermal donors has been established. The krypton implanted samples have been also treated with hydrogen plasma at 400 degrees C. The observed modification of electrical properties of the samples has been tentatively assigned to both hydrogen passivation of ion tracks formed by the swift Kr ions and hydrogen enhanced formation of the thermal donors within the track containing area.


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Last modified: Mon Feb 19 12:11:06 GMT 1996 JG
                                                                                                                                                                                                                                                                       

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