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Oxygen '96

Early Stages of Oxygen Precipitation in Silicon

THE ELECTRONIC STRUCTURE OF THE OXYGEN DONOR IN SI FROM PIEZOSPECTROSCOPY

M. Stavola

Department of Physics, Lehigh University, Bethlehem, USA

The effect of uniaxial stress upon the helium-like electronic transitions of the oxygen thermal donor in Si will be reviewed. The stress-induced splittings of the electronic transitions are characteristic of a defect with C2v symmetry and show that the thermal donor has a ground state wave function that is constructed from the pair of conduction band valleys that lies along the defect's C2 axis. EPR measurements made under stress have led to similar conclusions and the splittings of the thermal donor's DLTS spectrum by stress are also explained by this model. Thus piezospectroscopy serves to bring together the results of several groups to provide a consistent picture of the oxygen donor's effective-mass-like ground state.


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Last modified: Mon Feb 19 12:11:07 GMT 1996 JG
                                                                                                                                                                                                                                                                       

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