Skip to content
Physics and Astronomy

Quantum Systems and Nanomaterials Group

Back to top

Oxygen '96


Early Stages of Oxygen Precipitation in Silicon

SHALLOW DONOR COMPLEXES IN SILICON

A. Gali, J. Miro and P. Deák

Department of Atomic Physics, Technical University of Budapest, Budafoki ut. 8, H-1111 Budapest, Hungary.


Shallow thermal donors (STD) are electrically active oxygen-related thermally formed defects observed in silicon after annealing between 300 and 600 degrees C. There are experimental indications that STD's might be related to nitrogen. EPR studies find a C2v symmetry for such defect. Recently, theoretical investigation on an NO complex has shown that this structure is a shallow donor. We discuss the possibility of adding an oxygen interstitial to the NO complex. By using semi-empirical cyclic cluster model calculations, two metastabile structures have been found. One of these has C2v symmetry. These complexes are shallow donors as well. The approximate spin distributions are reported for both of them.


P. Deák's next abstract | full list of abstracts | participants list | main page.
Last modified: Mon Feb 19 12:11:15 GMT 1996 JG
                                                                                                                                                                                                                                                                       

Validate   Link-check © Copyright & disclaimer Privacy & cookies Share
Back to top