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Oxygen '96

Early Stages of Oxygen Precipitation in Silicon

BEAM RAPID THERMAL OXIDATION OF SI

Sergey A. Korenev

Joint Institute for Nuclear Research, 141980, Dubna, Moscow region, Russia

The results of investigations of rapid thermal oxidation (RTO) of Si by pulsed electron and ion beams are presented in the report. The electron beams had kinetic energy E=200-300 keV, beam current J=300-500 A and pulse duration t=300 ns; and ion beam of carbon with E=200-300 keV, J=10-50 A, t=300 ns. The beam is pulsed energy source in the RTO. Adiabatic conditions of pulsed beam oxidation are discussed. The main electrical characteristics of forming semiconductors structures are considered. The properties of these structure also discussed. The future development of beam method of oxidation of Si and equipment is considered. Beam equipment is very simple. The main advantages of beam oxidation of Si in the comparison with lamp method is explained. The questions of defects in the oxygen layers are investigated and results are discussed.


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Last modified: Mon Feb 19 12:11:13 GMT 1996 JG
                                                                                                                                                                                                                                                                       

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