Oxygen '96

Early Stages of Oxygen Precipitation in Silicon

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OXYGEN-RELATED LUMINESCENCE CENTRES CREATED IN CZOCHRALSKI SILICON

E. C. Lightowlers and G. Davies

Physics Department, King's College London Strand, London WC2R 2LS, UK.

Keywords: photoluminescence, oxygen, silicon, carbon, hydrogen.

A range of luminescence systems created in Czochralski (CZ) silicon by thermal treatments, radiation damage with and without subsequent thermal treatment, and indiffusion of various impurities, has been reported as oxygen related. However, there is generally no direct evidence that the centres responsible for these luminescence systems actually contain oxygen, other than the fact that they are very weak or not created in float-zone (FZ) silicon with a low oxygen concentration. Many of the centres have been shown to contain carbon, which can be released from its substitutional site by silicon self- interstitials created by radiation damage, oxygen aggregation and other processes. Some of the centres have been shown recently also to contain hydrogen. A brief survey will be made of all the luminescence systems, but with the major emphasis on those created by both short and long thermal treatments of CZ Si with high and low carbon concentrations, and the effects of deliberate hydrogen incorporation.

Last modified: Wed Feb 28 19:00:06 GMT 1996 JG