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Oxygen '96

Early Stages of Oxygen Precipitation in Silicon

OXYGEN AND COPPER PRECIPITATION DURING THERMAL ANNEALING OF MONOCRYSTALLINE SILICON

D. Ballutaud A. Correia, and A. Boutry-Forveille

CNRS / Laboratoire de Physique des Solides de Bellevue (LPSB), 1 place Aristide Briand F-92195 Meudon Cedex France

Oxygen precipitation in Cz silicon is analysed by Transmission Electron Microscopy (TEM) and using the Electron Beam Induced Current technique (EBIC), with the presence of copper or not.

Cz silicon samples are oxidised in dry 18O (1000 degrees C, one hour). TEM cross-section views exhibit point-like bulk defects to a density of approximately 1015 cm-3, which are not detected in the FZ silicon sample submitted to the same treatment. One of these defects observed in the high resolution mode appears to be plate-like shaped and lying in a {111} plane. Comparing oxygen concentration (calculated from secondary ion mass spectrometry analysis and Fourier transformed infrared analysis) and the particles density, a mean number of 1000 oxygen atoms per precipitate is obtained.

The diffusion lengths of the minority carriers are measured by the EBIC technique in as-grown and oxidised Cz and FZ silicon, with copper contamination or not. The electrical activity produced by precipitation is then quantatively evaluated and allows us to assume that the oxide based precipitates are surrounded by copper atoms, situated at the particle-silicon interface and/or the highly strained region in the nearby matrix.


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Last modified: Mon Feb 19 12:11:18 GMT 1996 JG
                                                                                                                                                                                                                                                                       

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