PHY3102 (PHY3305) Solid State Physics 1: Slide corrections

Slide 2.6: equation for Fermi energy should be

Slide 12.4: Important note should read "Always calculate minority carrier concentration from n₀p₀=n_i² once the majority carrier concentration has been determined, rather than directly via the equations derived on slide 11.8 (otherwise..."

Slide 12.6: Example should read "Calculate position of Fermi Energy level with respect to the bottom of the conduction band in n-type phosphorous doped Si at room temperature with..."

Slide 14.2: replacement here

Slide 18.2: The equation for the high temperature hear capcity should have no T dependence (i.e C = 3Nk_B)