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SPICE 3 User's Manual - Appendix B


APPENDIX B: MODEL AND DEVICE PARAMETERS

The following tables summarize the parameters available on each of the devices and models in (note that for some systems with limited memory, output parameters are not available). There are several tables for each type of device supported by . Input parameters to instances and models are parameters that can occur on an instance or model definition line in the form "keyword=value" where "keyword" is the parameter name as given in the tables. Default input parameters (such as the resistance of a resistor or the capacitance of a capacitor) obviously do not need the keyword specified.

Output parameters are those additional parameters which are available for many types of instances for the output of operating point and debugging information. These parameters are specified as "@device[keyword]" and are available for the most recent point computed or, if specified in a ".save" statement, for an entire simulation as a normal output vector. Thus, to monitor the gate-to-source capacitance of a MOSFET, a command


         save @m1[cgs]
given before a transient simulation causes the specified capacitance value to be saved at each timepoint, and a subsequent command such as

         plot @m1[cgs]
produces the desired plot. (Note that the show command does not use this format).

Some variables are listed as both input and output, and their output simply returns the previously input value, or the default value after the simulation has been run. Some parameter are input only because the output system can not handle variables of the given type yet, or the need for them as output variables has not been apparent. Many such input variables are available as output variables in a different format, such as the initial condition vectors that can be retrieved as individual initial condition values. Finally, internally derived values are output only and are provided for debugging and operating point output purposes.

Please note that these tables do not provide the detailed information available about the parameters provided in the section on each device and model, but are provided as a quick reference guide.

B.1 URC: Uniform R.C. line

See Userguide § 3.3.5

URC - instance parameters (input-output)
lLength of transmission line
nNumber of lumps
URC - instance parameters (output-only)
pos_nodePositive node of URC
neg_nodeNegative node of URC
gndGround node of URC
URC - model parameters (input-only)
urcUniform R.C. line model
URC - model parameters (input-output)
kPropagation constant
fmaxMaximum frequency of interest
rperlResistance per unit length
cperlCapacitance per unit length
isperlSaturation current per length
rsperlDiode resistance per length

B.2 ASRC: Arbitrary Source

See Userguide § 3.2.3

ASRC - instance parameters (input-only)
iCurrent source
vVoltage source
ASRC - instance parameters (output-only)
iCurrent through source
vVoltage across source
pos_nodePositive Node
neg_nodeNegative Node

B.3 BJT: Bipolar Junction Transistor

See Userguide § 3.4.4

BJT - instance parameters (input-only)
icInitial condition vector
BJT - instance parameters (input-output)
offDevice initially off
icvbeInitial B-E voltage
icvceInitial C-E voltage
areaArea factor
tempinstance temperature
BJT - instance parameters (output-only)
colnodeNumber of collector node
basenodeNumber of base node
emitnodeNumber of emitter node
substnodeNumber of substrate node
colprimenodeInternal collector node
baseprimenodeInternal base node
emitprimenodeInternal emitter node
icCurrent at collector node
ibCurrent at base node
ieEmitter current
isSubstrate current
vbeB-E voltage
vbcB-C voltage
gmSmall signal transconductance
gpiSmall signal input conductance - pi
gmuSmall signal conductance - mu
gxConductance from base to internal base
goSmall signal output conductance
geqcbd(Ibe)/d(Vbc)
gccsInternal C-S cap. equiv. cond.
geqbxInternal C-B-base cap. equiv. cond.
cpiInternal base to emitter capactance
cmuInternal base to collector capactiance
cbxBase to collector capacitance
ccsCollector to substrate capacitance
cqbeCap. due to charge storage in B-E jct.
cqbcCap. due to charge storage in B-C jct.
cqcsCap. due to charge storage in C-S jct.
cqbxCap. due to charge storage in B-X jct.
cexbcTotal current in B-X junction
qbeCharge storage B-E junction
qbcCharge storage B-C junction
qcsCharge storage C-S junction
qbxCharge storage B-X junction
pPower dissipation
BJT - model parameters (input-output)
npnNPN type device
pnpPNP type device
isSaturation Current
bfIdeal forward beta
nfForward emission coefficient
vafForward Early voltage
va(null)
ikfForward beta roll-off corner current
ik(null)
iseB-E leakage saturation current
neB-E leakage emission coefficient
brIdeal reverse beta
nrReverse emission coefficient
varReverse Early voltage
vb(null)
ikrreverse beta roll-off corner current
iscB-C leakage saturation current
ncB-C leakage emission coefficient
rbZero bias base resistance
irbCurrent for base resistance=(rb+rbm)/2
rbmMinimum base resistance
reEmitter resistance
rcCollector resistance
cjeZero bias B-E depletion capacitance
vjeB-E built in potential
pe(null)
mjeB-E junction grading coefficient
me(null)
tfIdeal forward transit time
xtfCoefficient for bias dependence of TF
vtfVoltage giving VBC dependence of TF
itfHigh current dependence of TF
ptfExcess phase
cjcZero bias B-C depletion capacitance
vjcB-C built in potential
pc(null)
mjcB-C junction grading coefficient
mc(null)
xcjcFraction of B-C cap to internal base
trIdeal reverse transit time
cjsZero bias C-S capacitance
ccsZero bias C-S capacitance
vjsSubstrate junction built in potential
ps(null)
mjsSubstrate junction grading coefficient
ms(null)
xtbForward and reverse beta temp. exp.
egEnergy gap for IS temp. dependency
xtiTemp. exponent for IS
fcForward bias junction fit parameter
tnomParameter measurement temperature
kfFlicker Noise Coefficient
afFlicker Noise Exponent
BJT - model parameters (output-only)
typeNPN or PNP
invearlyvoltfInverse early voltage:forward
invearlyvoltrInverse early voltage:reverse
invrollofffInverse roll off - forward
invrolloffrInverse roll off - reverse
collectorconductCollector conductance
emitterconductEmitter conductance
transtimevbcfactTransit time VBC factor
excessphasefactorExcess phase fact.

B.4 BSIM1: Berkeley Short Channel IGFET Model

See Userguide § 3.4.8

BSIM1 - instance parameters (input-only)
icVector of DS,GS,BS initial voltages
BSIM1 - instance parameters (input-output)
lLength
wWidth
adDrain area
asSource area
pdDrain perimeter
psSource perimeter
nrdNumber of squares in drain
nrsNumber of squares in source
offDevice is initially off
vdsInitial D-S voltage
vgsInitial G-S voltage
vbsInitial B-S voltage
BSIM1 - model parameters (input-only)
nmosFlag to indicate NMOS
pmosFlag to indicate PMOS
BSIM1 - model parameters (input-output)
vfbFlat band voltage
lvfbLength dependence of vfb
wvfbWidth dependence of vfb
phiStrong inversion surface potential
lphiLength dependence of phi
wphiWidth dependence of phi
k1Bulk effect coefficient 1
lk1Length dependence of k1
wk1Width dependence of k1
k2Bulk effect coefficient 2
lk2Length dependence of k2
wk2Width dependence of k2
etaVDS dependence of threshold voltage
letaLength dependence of eta
wetaWidth dependence of eta
x2eVBS dependence of eta
lx2eLength dependence of x2e
wx2eWidth dependence of x2e
x3eVDS dependence of eta
lx3eLength dependence of x3e
wx3eWidth dependence of x3e
dlChannel length reduction in um
dwChannel width reduction in um
muzZero field mobility at VDS=0 VGS=VTH
x2mzVBS dependence of muz
lx2mzLength dependence of x2mz
wx2mzWidth dependence of x2mz
musMobility at VDS=VDD VGS=VTH, channel length modulation
lmusLength dependence of mus
wmusWidth dependence of mus
x2msVBS dependence of mus
lx2msLength dependence of x2ms
wx2msWidth dependence of x2ms
x3msVDS dependence of mus
lx3msLength dependence of x3ms
wx3msWidth dependence of x3ms
u0VGS dependence of mobility
lu0Length dependence of u0
wu0Width dependence of u0
x2u0VBS dependence of u0
lx2u0Length dependence of x2u0
wx2u0Width dependence of x2u0
u1VDS depence of mobility, velocity saturation
lu1Length dependence of u1
wu1Width dependence of u1
x2u1VBS depence of u1
lx2u1Length depence of x2u1
wx2u1Width depence of x2u1
x3u1VDS depence of u1
lx3u1Length dependence of x3u1
wx3u1Width depence of x3u1
n0Subthreshold slope
ln0Length dependence of n0
wn0Width dependence of n0
nbVBS dependence of subthreshold slope
lnbLength dependence of nb
wnbWidth dependence of nb
ndVDS dependence of subthreshold slope
lndLength dependence of nd
wndWidth dependence of nd
toxGate oxide thickness in um
tempTemperature in degree Celcius
vddSupply voltage to specify mus
cgsoGate source overlap capacitance per unit channel width(m)
cgdoGate drain overlap capacitance per unit channel width(m)
cgboGate bulk overlap capacitance per unit channel length(m)
xpartFlag for channel charge partitioning
rshSource drain diffusion sheet resistance in ohm per square
jsSource drain junction saturation current per unit area
pbSource drain junction built in potential
mjSource drain bottom junction capacitance grading coefficient
pbswSource drain side junction capacitance built in potential
mjswSource drain side junction capacitance grading coefficient
cjSource drain bottom junction capacitance per unit area
cjswSource drain side junction capacitance per unit area
wdfDefault width of source drain diffusion in um
dellLength reduction of source drain diffusion

B.5 BSIM2: Berkeley Short Channel IGFET Model

See Userguide § 3.4.8

BSIM2 - instance parameters (input-only)
icVector of DS,GS,BS initial voltages
BSIM2 - instance parameters (input-output)
lLength
wWidth
adDrain area
asSource area
pdDrain perimeter
psSource perimeter
nrdNumber of squares in drain
nrsNumber of squares in source
offDevice is initially off
vdsInitial D-S voltage
vgsInitial G-S voltage
vbsInitial B-S voltage
BSIM2 - model parameters (input-only)
nmosFlag to indicate NMOS
pmosFlag to indicate PMOS
BSIM2 - model parameters (input-output)
vfbFlat band voltage
lvfbLength dependence of vfb
wvfbWidth dependence of vfb
phiStrong inversion surface potential
lphiLength dependence of phi
wphiWidth dependence of phi
k1Bulk effect coefficient 1
lk1Length dependence of k1
wk1Width dependence of k1
k2Bulk effect coefficient 2
lk2Length dependence of k2
wk2Width dependence of k2
|eta0VDS dependence of threshold voltage at VDD=0
leta0Length dependence of eta0
weta0Width dependence of eta0
etabVBS dependence of eta
letabLength dependence of etab
wetabWidth dependence of etab
dlChannel length reduction in um
dwChannel width reduction in um
mu0Low-field mobility, at VDS=0 VGS=VTH
mu0bVBS dependence of low-field mobility
lmu0bLength dependence of mu0b
wmu0bWidth dependence of mu0b
mus0Mobility at VDS=VDD VGS=VTH
lmus0Length dependence of mus0
wmus0Width dependence of mus
musbVBS dependence of mus
lmusbLength dependence of musb
wmusbWidth dependence of musb
mu20VDS dependence of mu in tanh term
lmu20Length dependence of mu20
wmu20Width dependence of mu20
mu2bVBS dependence of mu2
lmu2bLength dependence of mu2b
wmu2bWidth dependence of mu2b
mu2gVGS dependence of mu2
lmu2gLength dependence of mu2g
wmu2gWidth dependence of mu2g
mu30VDS dependence of mu in linear term
lmu30Length dependence of mu30
wmu30Width dependence of mu30
mu3bVBS dependence of mu3
lmu3bLength dependence of mu3b
wmu3bWidth dependence of mu3b
mu3gVGS dependence of mu3
lmu3gLength dependence of mu3g
wmu3gWidth dependence of mu3g
mu40VDS dependence of mu in linear term
lmu40Length dependence of mu40
wmu40Width dependence of mu40
mu4bVBS dependence of mu4
lmu4bLength dependence of mu4b
wmu4bWidth dependence of mu4b
mu4gVGS dependence of mu4
lmu4gLength dependence of mu4g
wmu4gWidth dependence of mu4g
ua0Linear VGS dependence of mobility
lua0Length dependence of ua0
wua0Width dependence of ua0
uabVBS dependence of ua
luabLength dependence of uab
wuabWidth dependence of uab
ub0Quadratic VGS dependence of mobility
lub0Length dependence of ub0
wub0Width dependence of ub0
ubbVBS dependence of ub
lubbLength dependence of ubb
wubbWidth dependence of ubb
u10VDS depence of mobility
lu10Length dependence of u10
wu10Width dependence of u10
u1bVBS depence of u1
lu1bLength depence of u1b
wu1bWidth depence of u1b
u1dVDS depence of u1
lu1dLength depence of u1d
wu1dWidth depence of u1d
n0Subthreshold slope at VDS=0 VBS=0
ln0Length dependence of n0
wn0Width dependence of n0
nbVBS dependence of n
lnbLength dependence of nb
wnbWidth dependence of nb
ndVDS dependence of n
lndLength dependence of nd
wndWidth dependence of nd
vof0Threshold voltage offset AT VDS=0 VBS=0
lvof0Length dependence of vof0
wvof0Width dependence of vof0
vofbVBS dependence of vof
lvofbLength dependence of vofb
wvofbWidth dependence of vofb
vofdVDS dependence of vof
lvofdLength dependence of vofd
wvofdWidth dependence of vofd
ai0Pre-factor of hot-electron effect.
lai0Length dependence of ai0
wai0Width dependence of ai0
aibVBS dependence of ai
laibLength dependence of aib
waibWidth dependence of aib
bi0Exponential factor of hot-electron effect.
lbi0Length dependence of bi0
wbi0Width dependence of bi0
bibVBS dependence of bi
lbibLength dependence of bib
wbibWidth dependence of bib
vghighUpper bound of the cubic spline function.
lvghighLength dependence of vghigh
wvghighWidth dependence of vghigh
vglowLower bound of the cubic spline function.
lvglowLength dependence of vglow
wvglowWidth dependence of vglow
toxGate oxide thickness in um
tempTemperature in degree Celcius
vddMaximum Vds
vggMaximum Vgs
vbbMaximum Vbs
cgsoGate source overlap capacitance per unit channel width(m)
cgdoGate drain overlap capacitance per unit channel width(m)
cgboGate bulk overlap capacitance per unit channel length(m)
xpartFlag for channel charge partitioning
rshSource drain diffusion sheet resistance in ohm per square
jsSource drain junction saturation current per unit area
pbSource drain junction built in potential
mjSource drain bottom junction capacitance grading coefficient
pbswSource drain side junction capacitance built in potential
mjswSource drain side junction capacitance grading coefficient
cjSource drain bottom junction capacitance per unit area
cjswSource drain side junction capacitance per unit area
wdfDefault width of source drain diffusion in um
dellLength reduction of source drain diffusion

B.6 Capacitor: Fixed capacitor

See Userguide § 3.1.4

Capacitor - instance parameters (input-output)
capacitanceDevice capacitance
icInitial capacitor voltage
wDevice width
lDevice length
Capacitor - instance parameters (output-only)
iDevice current
pInstantaneous device power
Capacitor - model parameters (input-only)
cCapacitor model
Capacitor - model parameters (input-output)
cjBottom Capacitance per area
cjswSidewall capacitance per meter
defwDefault width
narrowwidth correction factor

B.7 CCCS: Current controlled current source

See Userguide § 3.2.2.3

CCCS - instance parameters (input-output)
gainGain of source
controlName of controlling source
CCCS - instance parameters (output-only)
neg_nodeNegative node of source
pos_nodePositive node of source
iCCCS output current
vCCCS voltage at output
pCCCS power

B.8 CCVS: Linear current controlled current source

See Userguide § 3.2.2.4

CCVS - instance parameters (input-output)
gainTransresistance (gain)
controlControlling voltage source
CCVS - instance parameters (output-only)
pos_nodePositive node of source
neg_nodeNegative node of source
iCCVS output current
vCCVS output voltage
pCCVS power

B.9 CSwitch: Current controlled ideal switch

See Userguide § 3.1.10

CSwitch - instance parameters (input-only)
onInitially closed
offInitially open
CSwitch - instance parameters (input-output)
controlName of controlling source
CSwitch - instance parameters (output-only)
pos_nodePositive node of switch
neg_nodeNegative node of switch
iSwitch current
pInstantaneous power
CSwitch - model parameters (input-output)
cswCurrent controlled switch model
itThreshold current
ihHysterisis current
ronClosed resistance
roffOpen resistance
CSwitch - model parameters (output-only)
gonClosed conductance
goffOpen conductance

B.10 Diode: Junction Diode model

See Userguide § 3.4.2

Diode - instance parameters (input-output)
offInitially off
tempInstance temperature
icInitial device voltage
areaArea factor
Diode - instance parameters (output-only)
vdDiode voltage
idDiode current
cDiode current
gdDiode conductance
cdDiode capacitance
chargeDiode capacitor charge
capcurDiode capacitor current
pDiode power
Diode - model parameters (input-only)
dDiode model
Diode - model parameters (input-output)
isSaturation current
tnomParameter measurement temperature
rsOhmic resistance
nEmission Coefficient
ttTransit Time
cjoJunction capacitance
cj0(null)
vjJunction potential
mGrading coefficient
egActivation energy
xtiSaturation current temperature exp.
kfflicker noise coefficient
afflicker noise exponent
fcForward bias junction fit parameter
bvReverse breakdown voltage
ibvCurrent at reverse breakdown voltage
Diode - model parameters (output-only)
condOhmic conductance

B.11 Inductor: Inductors

See Userguide § 3.1.7

Inductor - instance parameters (input-output)
inductanceInductance of inductor
icInitial current through inductor
Inductor - instance parameters (output-only)
fluxFlux through inductor
vTerminal voltage of inductor
volt 
iCurrent through the inductor
current 
pinstantaneous power dissipated by the inductor

B.12 mutual: Mutual inductors

See Userguide § 3.1.8

mutual - instance parameters (input-output)
kMutual inductance
coefficient(null)
inductor1First coupled inductor
inductor2Second coupled inductor

B.13 Isource: Independent current source

See Userguide § 3.2.1

Isource - instance parameters (input-only)
pulsePulse description
sineSinusoidal source description
sinSinusoidal source description
expExponential source description
pwlPiecewise linear description
sffmsingle freq. FM description
acAC magnitude,phase vector
cCurrent through current source
distof1f1 input for distortion
distof2f2 input for distortion
Isource - instance parameters (input-output)
dcDC value of source
acmagAC magnitude
acphaseAC phase
Isource - instance parameters (output-only)
neg_nodeNegative node of source
pos_nodePositive node of source
acrealAC real part
acimagAC imaginary part
functionFunction of the source
orderOrder of the source function
coeffsCoefficients of the source
vVoltage across the supply
pPower supplied by the source

B.14 JFET: Junction Field effect transistor

See Userguide § 3.4.1

JFET - instance parameters (input-output)
offDevice initially off
icInitial VDS,VGS vector
areaArea factor
ic-vdsInitial D-S voltage
ic-vgsInitial G-S volrage
tempInstance temperature
JFET - instance parameters (output-only)
drain-nodeNumber of drain node
gate-nodeNumber of gate node
source-nodeNumber of source node
drain-prime-nodeInternal drain node
source-prime-nodeInternalsource node
vgsVoltage G-S
vgdVoltage G-D
igCurrent at gate node
idCurrent at drain node
isSource current
igdCurrent G-D
gmTransconductance
gdsConductance D-S
ggsConductance G-S
ggdConductance G-D
qgsCharge storage G-S junction
qgdCharge storage G-D junction
cqgsCapacitance due to charge storage G-S junction
cqgdCapacitance due to charge storage G-D junction
pPower dissipated by the JFET
JFET - model parameters (output-only)
njfN type JFET model
pjfP type JFET model
vt0Threshold voltage
vto(null)
betaTransconductance parameter
lambdaChannel length modulation param.
rdDrain ohmic resistance
rsSource ohmic resistance
cgsG-S junction capactance
cgdG-D junction cap
pbGate junction potential
isGate junction saturation current
fcForward bias junction fit parm.
bDoping tail parameter
tnomparameter measurement temperature
kfFlicker Noise Coefficient
afFlicker Noise Exponent
JFET - model parameters (output-only)
typeN-type or P-type JFET model
gdDrain conductance
gsSource conductance

B15 LTRA: Lossy transmission line

See Userguide § 3.3.3

LTRA - instance parameters (input-only)
icInitial condition vector:v1,i1,v2,i2
LTRA - instance parameters (input-output)
v1Initial voltage at end 1
v2Initial voltage at end 2
i1Initial current at end 1
i2Initial current at end 2
LTRA - instance parameters (output-only)
pos_node1Positive node of end 1 of t-line
neg_node1Negative node of end 1 of t.line
pos_node2Positive node of end 2 of t-line
neg_node2Negative node of end 2 of t-line
LTRA - model parameters (input-output)
ltraLTRA model
rResistance per metre
lInductance per metre
g(null)
cCapacitance per metre
lenlength of line
nocontrolNo timestep control
steplimitalways limit timestep to 0.8*(delay of line)
nosteplimitdon't always limit timestep to 0.8*(delay of line)
lininterpuse linear interpolation
quadinterpuse quadratic interpolation
mixedinterpuse linear interpolation if quadratic results look unacceptable
truncnruse N-R iterations for step calculation in LTRAtrunc
truncdontcutdon't limit timestep to keep impulse response calculation errors low
compactrelspecial reltol for straight line checking
compactabsspecial abstol for straight line checking
LTRA - model parameters (output-only)
relRel. rate of change of deriv. for bkpt
absAbs. rate of change of deriv. for bkpt

B.16 MES: GaAs MESFET model

See Userguide § 3.4.10

MES - instance parameters (input-output)
areaArea factor
icvdsInitial D-S voltage
icvgsInitial G-S voltage
MES - instance parameters (output-only)
offDevice initially off
dnodeNumber of drain node
gnodeNumber of gate node
snodeNumber of source node
dprimenodeNumber of internal drain node
sprimenodeNumber of internal source node
vgsGate-Source voltage
vgdGate-Drain voltage
cgGate capacitance
cdDrain capacitance
cgdGate-Drain capacitance
gmTransconductance
gdsDrain-Source conductance
ggsGate-Source conductance
ggdGate-Drain conductance
cqgsCapacitance due to gate-source charge storage
cqgdCapacitance due to gate-drain charge storage
qgsGate-Source charge storage
qgdGate-Drain charge storage
isSource current
pPower dissipated by the mesfet
MES - model parameters (input-only)
nmfN type MESfet model
pmfP type MESfet model
MES - model parameters (input-output)
vt0Pinch-off voltage
vto(null)
alphaSaturation voltage parameter
betaTransconductance parameter
lambdaChannel length modulation parm.
bDoping tail extending parameter
rdDrain ohmic resistance
rsSource ohmic resistance
cgsG-S junction capacitance
cgdG-D junction capacitance
pbGate junction potential
isJunction saturation current
fcForward bias junction fit parm.
kfFlicker noise coefficient
afFlicker noise exponent
MES - model parameters (output-only)
typeN-type or P-type MESfet model
gdDrain conductance
gsSource conductance
depl_capDepletion capacitance
vcritCritical voltage

B.17 Mos1: Level 1 MOSfet model with Meyer capacitance model

See Userguide § 3.4.8

Mos1 - instance parameters (input-only)
offDevice initially off
icVector of D-S, G-S, B-S voltages
Mos1 - instance parameters (input-output)
lLength
wWidth
adDrain area
asSource area
pdDrain perimeter
psSource perimeter
nrdDrain squares
nrsSource squares
icvdsInitial D-S voltage
icvgsInitial G-S voltage
icvbsInitial B-S voltage
tempInstance temperature
Mos1 - instance parameters (output-only)
idDrain current
isSource current
igGate current
ibBulk current
ibdB-D junction current
ibsB-S junction current
vgsGate-Source voltage
vdsDrain-Source voltage
vbsBulk-Source voltage
vbdBulk-Drain voltage
dnodeNumber of the drain node
gnodeNumber of the gate node
snodeNumber of the source node
bnodeNumber of the node
dnodeprimeNumber of int. drain node
snodeprimeNumber of int. source node
von 
vdsatSaturation drain voltage
sourcevcritCritical source voltage
drainvcritCritical drain voltage
rsSource resistance
sourceconductanceConductance of source
rdDrain conductance
drainconductanceConductance of drain
gmTransconductance
cbsBulk-Source capacitance
gmbBulk-Source transconductance
gmbs 
gbdBulk-Drain conductance
gbsBulk-Source conductance
cbdBulk-Drain capacitance
cbsBulk-Source capacitance
cgsGate-Source capacitance
cgdGate-Drain capacitance
cgbGate-Bulk capacitance
cqgsCapacitance due to gate-source charge storage
cqgdCapacitance due to gate-drain charge storage
cqgbCapacitance due to gate-bulk charge storage
cqbdCapacitance due to bulk-drain charge storage
cqbsCapacitance due to bulk-source charge storage
cbd0Zero-Bias B-D junction capacitance
cbdsw0 
cbs0Zero-Bias B-S junction capacitance
cbssw0 
qgsGate-Source charge storage
qgdGate-Drain charge storage
qgbGate-Bulk charge storage
qbdBulk-Drain charge storage
qbsBulk-Source charge storage
pInstaneous power
Mos1 - model parameters (input-only)
nmosN type MOSfet model
pmosP type MOSfet model
Mos1 - model parameters (input-output)
vtoThreshold voltage
vt0(null)
kpTransconductance parameter
gammaBulk threshold parameter
phiSurface potential
lambdaChannel length modulation
rdDrain ohmic resistance
rsSource ohmic resistance
cbdB-D junction capacitance
cbsB-S junction capacitance
isBulk junction sat. current
pbBulk junction potential
cgsoGate-source overlap cap.
cgdoGate-drain overlap cap.
cgboGate-bulk overlap cap.
rshSheet resistance
cjBottom junction cap per area
mjBottom grading coefficient
cjswSide junction cap per area
mjswSide grading coefficient
jsBulk jct. sat. current density
toxOxide thickness
ldLateral diffusion
u0Surface mobility
uo(null)
fcForward bias jct. fit parm.
nsubSubstrate doping
tpgGate type
nssSurface state density
tnomParameter measurement temperature
kfFlicker noise coefficient
afFlicker noise exponent
Mos1 - model parameters (output-only)
typeN-channel or P-channel MOS

B.18 Mos2: Level 2 MOSfet model with Meyer capacitance model

See Userguide § 3.4.8

Mos2 - instance parameters (input-only)
offDevice initially off
icVector of D-S, G-S, B-S voltages
Mos2 - instance parameters (input-output)
lLength
wWidth
adDrain area
asSource area
pdDrain perimeter
psSource perimeter
nrdDrain squares
nrsSource squares
icvdsInitial D-S voltage
icvgsInitial G-S voltage
icvbsInitial B-S voltage
tempInstance operating temperature
Mos2 - instance parameters (output-only)
idDrain current
cd 
ibdB-D junction current
ibsB-S junction current
drainvcritCritical drain voltage
isSource current
igGate current
ibBulk current
vgsGate-Source voltage
vdsDrain-Source voltage
vbsBulk-Source voltage
vbdBulk-Drain voltage
dnodeNumber of drain node
gnodeNumber of gate node
snodeNumber of source node
bnodeNumber of bulk node
dnodeprimeNumber of internal drain node
snodeprimeNumber of internal source node
von 
vdsatSaturation drain voltage
sourcevcritCritical source voltage
drainvcritCritical drain voltage
rsSource resistance
sourceconductanceSourceconductance
rdDrain resistance
drainconductanceDrain conductance
gmTransconductance
gdsDrain-Source conductance
gmbBulk-Source transconductance
gmbs 
gbdBulk-Drain conductance
gbsBulk-Source conductance
cbdBulk-Drain capacitance
cbsBulk-Source capacitance
cgsGate-Source capacitance
cgdGate-Drain capacitance
cgbGate-Bulk capacitance
cbd0Zero-Bias B-D junction capacitance
cbdsw0 
cbs0Zero-Bias B-S junction capacitance
cbssw0 
cqgsCapacitance due to gate-source charge storage
cqgdCapacitance due to gate-drain charge storage
cqgbCapacitance due to gate-bulk charge storage
cqbdCapacitance due to bulk-drain charge storage
cqbsCapacitance due to bulk-source charge storage
qgsGate-Source charge storage
qgdGate-Drain charge storage
qgbGate-Bulk charge storage
qbdBulk-Drain charge storage
qbsBulk-Source charge storage
pInstantaneous power
Mos2 - model parameters (input-only)
nmosN type MOSfet model
pmosP type MOSfet model
Mos2 - model parameters (input-output)
vtoThreshold voltage
vt0(null)
kpTransconductance parameter
gammaBulk threshold parameter
phiSurface potential
lambdaChannel length modulation
rdDrain ohmic resistance
rsSource ohmic resistance
cbdB-D junction capacitance
cbsB-S junction capacitance
isBulk junction sat. current
pbBulk junction potential
cgsoGate-source overlap cap.
cgdoGate-drain overlap cap.
cgboGate-bulk overlap cap.
rshSheet resistance
cjBottom junction cap per area
mjBottom grading coefficient
cjswSide junction cap per area
mjswSide grading coefficient
jsBulk jct. sat. current density
toxOxide thickness
ldLateral diffusion
u0Surface mobility
uo(null)
fcForward bias jct. fit parm.
nsubSubstrate doping
tpgGate type
nssSurface state density
deltaWidth effect on threshold
uexpCrit. field exp for mob. deg.
ucritCrit. field for mob. degradation
vmaxMaximum carrier drift velocity
xjJunction depth
neffTotal channel charge coeff.
nfsFast surface state density
tnomParameter measurement temperature
kfFlicker noise coefficient
afFlicker noise exponent
Mos2 - model parameters (output-only)
typeN-channel or P-channel MOS

B.19 Mos3: Level 3 MOSfet model with Meyer capacitance model

See Userguide § 3.4.8

Mos3 - instance parameters (input-only)
offDevice initially off
Mos3 - instance parameters (input-output)
lLength
wWidth
adDrain area
asSource area
pdDrain perimeter
psSource perimeter
nrdDrain squares
nrsSource squares
icvdsInitial D-S voltage
icvgsInitial G-S voltage
icvbsInitial B-S voltage
icVector of D-S, G-S, B-S voltages
tempInstance operating temperature
Mos3 - instance parameters (output-only)
idDrain current
cdDrain current
ibdB-D junction current
ibsB-S junction current
isSource current
igGate current
ibBulk current
vgsGate-Source voltage
vdsDrain-Source voltage
vbsBulk-Source voltage
vbdBulk-Drain voltage
dnodeNumber of drain node
gnodeNumber of gate node
snodeNumber of source node
bnodeNumber of bulk node
dnodeprimeNumber of internal drain node
snodeprimeNumber of internal source node
vonTurn-on voltage
vdsatSaturation drain voltage
sourcevcritCritical source voltage
drainvcritCritical drain voltage
rsSource resistance
sourceconductanceSourceconductance
rdDrain resistance
drainconductanceDrain conductance
gmTransconductance
gdsDrain-Source conductance
gmbBulk-Source transconductance
gmbsBulk-Source transconductance
gbdBulk-Drain conductance
gbsBulk-Source conductance
cbdBulk-Drain capacitance
cbsBulk-Source capacitance
cgsGate-Source capacitance
cgdGate-Drain capacitance
cgbGate-Bulk capacitance
cqgsCapacitance due to gate-source charge storage
cqgdCapacitance due to gate-drain charge storage
cqgbCapacitance due to gate-bulk charge storage
cqbdCapacitance due to bulk-drain charge storage
cqbsCapacitance due to bulk-source charge storage
cbd0Zero-Bias B-D junction capacitance
cbdsw0Zero-Bias B-D sidewall capacitance
cbs0Zero-Bias B-S junction capacitance
cbssw0Zero-Bias B-S sidewall capacitance
qbsBulk-Source charge storage
qgsGate-Source charge storage
qgdGate-Drain charge storage
qgbGate-Bulk charge storage
qbdBulk-Drain charge storage
pInstantaneous power
Mos3 - model parameters (input-only)
nmosN type MOSfet model
pmosP type MOSfet model
Mos3 - model parameters (input-output)
vtoThreshold voltage
vt0(null)
kpTransconductance parameter
gammaBulk threshold parameter
phiSurface potential
rdDrain ohmic resistance
rsSource ohmic resistance
cbdB-D junction capacitance
cbsB-S junction capacitance
isBulk junction sat. current
pbBulk junction potential
cgsoGate-source overlap cap.
cgdoGate-drain overlap cap.
cgboGate-bulk overlap cap.
rshSheet resistance
cjBottom junction cap per area
mjBottom grading coefficient
cjswSide junction cap per area
mjswSide grading coefficient
jsBulk jct. sat. current density
toxOxide thickness
ldLateral diffusion
u0Surface mobility
uo(null)
fcForward bias jct. fit parm.
nsubSubstrate doping
tpgGate type
nssSurface state density
vmaxMaximum carrier drift velocity
xjJunction depth
nfsFast surface state density
xdDepletion layer width
alphaAlpha
etaVds dependence of threshold voltage
deltaWidth effect on threshold
input_delta(null)
thetaVgs dependence on mobility
kappaKappa
tnomParameter measurement temperature
kfFlicker noise coefficient
afFlicker noise exponent
Mos3 - model parameters (output-only)
typeN-channel or P-channel MOS

B.20 Mos6: Level 6 MOSfet model with Meyer capacitance model

See Userguide § 3.4.8

Mos6 - instance parameters (input-only)
offDevice initially off
icVector of D-S, G-S, B-S voltages
Mos6 - instance parameters (input-output)
lLength
wWidth
adDrain area
asSource area
pdDrain perimeter
psSource perimeter
nrdDrain squares
nrsSource squares
icvdsInitial D-S voltage
icvgsInitial G-S voltage
icvbsInitial B-S voltage
tempInstance temperature
Mos6 - instance parameters (output-only)
idDrain current
cdDrain current
isSource current
igGate current
ibBulk current
ibsB-S junction capacitance
ibdB-D junction capacitance
vgsGate-Source voltage
vdsDrain-Source voltage
vbsBulk-Source voltage
vbdBulk-Drain voltage
dnodeNumber of the drain node
gnodeNumber of the gate node
snodeNumber of the source node
bnodeNumber of the node
dnodeprimeNumber of int. drain node
snodeprimeNumber of int. source node
rsSource resistance
sourceconductanceSourceconductance
rdDrain resistance
drainconductanceDrain conductance
vonTurn-on voltage
vdsatSaturation drain voltage
sourcevcritCritical source voltage
drainvcritCritical drain voltage
gmbsBulk-Source transconductance
gmTransconductance
gdsDrain-Source conductance
gbdBulk-Drain conductance
gbsBulk-Source conductance
cgsGate-Source capacitance
cgdGate-Drain capacitance
cgbGate-Bulk capacitance
cbdBulk-Drain capacitance
cbsBulk-Source capacitance
cbd0Zero-Bias B-D junction capacitance
cbdsw0 
cbs0Zero-Bias B-S junction capacitance
cbssw0 
cqgsCapacitance due to gate-source charge storage
cqgdCapacitance due to gate-drain charge storage
cqgbCapacitance due to gate-bulk charge storage
cqbdCapacitance due to bulk-drain charge storage
cqbsCapacitance due to bulk-source charge storage
qgsGate-Source charge storage
qgdGate-Drain charge storage
qgbGate-Bulk charge storage
qbdBulk-Drain charge storage
qbsBulk-Source charge storage
pInstaneous power
Mos6 - model parameters (input-only)
nmosN type MOSfet model
pmosP type MOSfet model
Mos6 - model parameters (input-output)
vtoThreshold voltage
vt0(null)
kvSaturation voltage factor
nvSaturation voltage coeff.
kcSaturation current factor
ncSaturation current coeff.
nvthThreshold voltage coeff.
psSat. current modification par.
gammaBulk threshold parameter
gamma1Bulk threshold parameter 1
sigmaStatic feedback effect par.
phiSurface potential
lambdaChannel length modulation param.
lambda0Channel length modulation param. 0
lambda1Channel length modulation param. 1
rdDrain ohmic resistance
rsSource ohmic resistance
cbdB-D junction capacitance
cbsB-S junction capacitance
isBulk junction sat. current
pbBulk junction potential
cgsoGate-source overlap cap.
cgdoGate-drain overlap cap.
cgboGate-bulk overlap cap.
rshSheet resistance
cjBottom junction cap per area
mjBottom grading coefficient
cjswSide junction cap per area
mjswSide grading coefficient
jsBulk jct. sat. current density
ldLateral diffusion
toxOxide thickness
u0Surface mobility
uo(null)
fcForward bias jct. fit parm.
tpgGate type
nsubSubstrate doping
nssSurface state density
tnomParameter measurement temperature
Mos6 - model parameters (output-only)
typeN-channel or P-channel MOS

B.21 Resistor: Simple linear resistor

See Userguide § 3.1.1

Resistor - instance parameters (input-output)
resistanceResistance
tempInstance operating temperature
lLength
wWidth
Resistor - instance parameters (output-only)
iCurrent
pPower
Resistor - model parameters (input-only)
rDevice is a resistor model
Resistor - model parameters (input-output)
rshSheet resistance
narrowNarrowing of resistor
tc1First order temp. coefficient
tc2Second order temp. coefficient
defwDefault device width
tnomParameter measurement temperature

B.22 Switch: Ideal voltage controlled switch

See Userguide § 3.1.10

Switch - instance parameters (input-only)
onSwitch initially closed
offSwitch initially open
Switch - instance parameters (input-output)
pos_nodePositive node of switch
neg_nodeNegative node of switch
Switch - instance parameters (output-only)
cont_p_nodePositive contr. node of switch
cont_n_nodePositive contr. node of switch
iSwitch current
pSwitch power
Switch - model parameters (input-output)
swSwitch model
vtThreshold voltage
vhHysteresis voltage
ronResistance when closed
roffResistance when open
Switch - model parameters (output-only)
gonConductance when closed
goffConductance when open

B.23 Tranline: Lossless transmission line

See Userguide § 3.3.1

Tranline - instance parameters (input-only)
icInitial condition vector:v1,i1,v2,i2
Tranline - instance parameters (input-output)
z0Characteristic impedance
zo(null)
fFrequency
tdTransmission delay
nlNormalized length at frequency given
v1Initial voltage at end 1
v2Initial voltage at end 2
i1Initial current at end 1
i2Initial current at end 2
Tranline - instance parameters (output-only)
relRel. rate of change of deriv. for bkpt
absAbs. rate of change of deriv. for bkpt
pos_node1Positive node of end 1 of t. line
neg_node1Negative node of end 1 of t. line
pos_node2Positive node of end 2 of t. line
neg_node2Negative node of end 2 of t. line
delaysDelayed values of excitation

B.24 VCCS: Voltage controlled current source

See Userguide § 3.2.2.1

VCCS - instance parameters (input-only)
icInitial condition of controlling source
VCCS - instance parameters (input-output)
gainTransconductance of source (gain)
VCCS - instance parameters (output-only)
pos_nodePositive node of source
neg_nodeNegative node of source
cont_p_nodePositive node of contr. source
cont_n_nodeNegative node of contr. source
iOutput current
vVoltage across output
pPower

B.25 VCVS: Voltage controlled voltage source

See Userguide § 3.2.2.2

VCVS - instance parameters (input-only)
icInitial condition of controlling source
VCVS - instance parameters (input-output)
gainVoltage gain
VCVS - instance parameters (output-only)
pos_nodePositive node of source
neg_nodeNegative node of source
cont_p_nodePositive node of contr. source
cont_n_nodeNegative node of contr. source
iOutput current
vOutput voltage
pPower

B.26 Vsource: Independent voltage source

See Userguide § 3.2.1

Vsource - instance parameters (input-only)
pulsePulse description
sineSinusoidal source description
sinSinusoidal source description
expExponential source description
pwlPiecewise linear description
sffmSingle freq. FM descripton
acAC magnitude, phase vector
distof1f1 input for distortion
distof2f2 input for distortion
Vsource - instance parameters (input-output)
dcD.C. source value
acmagA.C. Magnitude
acphaseA.C. Phase
Vsource - instance parameters (output-only)
pos_nodePositive node of source
neg_nodeNegative node of source
functionFunction of the source
orderOrder of the source function
coeffsCoefficients for the function
acrealAC real part
acimagAC imaginary part
iVoltage source current
pInstantaneous power
                                                                                                                                                                                                                                                                       

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