The following tables summarize the parameters available on each of
the devices and models in (note that for some systems with limited
memory, output parameters are not available). There are several
tables for each type of device supported by . Input parameters to
instances and models are parameters that can occur on an instance or
model definition line in the form "keyword=value" where "keyword" is
the parameter name as given in the tables. Default input parameters
(such as the resistance of a resistor or the capacitance of a
capacitor) obviously do not need the keyword specified.
Output parameters are those additional parameters which are
available for many types of instances for the output of operating point
and debugging information. These parameters are specified as
"@device[keyword]" and are available for the most recent point computed
or, if specified in a ".save" statement,
for an entire simulation as a normal output vector. Thus, to monitor
the gate-to-source capacitance of a MOSFET, a command
given before a transient simulation causes the specified
capacitance value to be saved at each timepoint, and a subsequent command such as
produces the desired plot. (Note that the
Some variables are listed as both input and output, and
their output simply returns the previously input value, or
the default value after the simulation has been run. Some
parameter are input only because the output system can not
handle variables of the given type yet, or the need for them
as output variables has not been apparent. Many such input
variables are available as output variables in a different
format, such as the initial condition vectors that can be
retrieved as individual initial condition values. Finally,
internally derived values are output only and are provided
for debugging and operating point output purposes.
Please note that these tables do not provide the
detailed information available about the parameters provided
in the section on each device and model, but are provided as
a quick reference guide.
| BJT - instance parameters (input-only) |
|---|
| ic | Initial condition vector |
| BJT - instance parameters (input-output) |
|---|
| off | Device initially off |
| icvbe | Initial B-E voltage |
| icvce | Initial C-E voltage |
| area | Area factor |
| temp | instance temperature |
| BJT - instance parameters (output-only) |
|---|
| colnode | Number of collector node |
| basenode | Number of base node |
| emitnode | Number of emitter node |
| substnode | Number of substrate node |
| colprimenode | Internal collector node |
| baseprimenode | Internal base node |
| emitprimenode | Internal emitter node |
| ic | Current at collector node |
| ib | Current at base node |
| ie | Emitter current |
| is | Substrate current |
| vbe | B-E voltage |
| vbc | B-C voltage |
| gm | Small signal transconductance |
| gpi | Small signal input conductance - pi |
| gmu | Small signal conductance - mu |
| gx | Conductance from base to internal base |
| go | Small signal output conductance |
| geqcb | d(Ibe)/d(Vbc) |
| gccs | Internal C-S cap. equiv. cond. |
| geqbx | Internal C-B-base cap. equiv. cond. |
| cpi | Internal base to emitter capactance |
| cmu | Internal base to collector capactiance |
| cbx | Base to collector capacitance |
| ccs | Collector to substrate capacitance |
| cqbe | Cap. due to charge storage in B-E jct. |
| cqbc | Cap. due to charge storage in B-C jct. |
| cqcs | Cap. due to charge storage in C-S jct. |
| cqbx | Cap. due to charge storage in B-X jct. |
| cexbc | Total current in B-X junction |
| qbe | Charge storage B-E junction |
| qbc | Charge storage B-C junction |
| qcs | Charge storage C-S junction |
| qbx | Charge storage B-X junction |
| p | Power dissipation |
| BJT - model parameters (input-output) |
|---|
| npn | NPN type device |
| pnp | PNP type device |
| is | Saturation Current |
| bf | Ideal forward beta |
| nf | Forward emission coefficient |
| vaf | Forward Early voltage |
| va | (null) |
| ikf | Forward beta roll-off corner current |
| ik | (null) |
| ise | B-E leakage saturation current |
| ne | B-E leakage emission coefficient |
| br | Ideal reverse beta |
| nr | Reverse emission coefficient |
| var | Reverse Early voltage |
| vb | (null) |
| ikr | reverse beta roll-off corner current |
| isc | B-C leakage saturation current |
| nc | B-C leakage emission coefficient |
| rb | Zero bias base resistance |
| irb | Current for base resistance=(rb+rbm)/2 |
| rbm | Minimum base resistance |
| re | Emitter resistance |
| rc | Collector resistance |
| cje | Zero bias B-E depletion capacitance |
| vje | B-E built in potential |
| pe | (null) |
| mje | B-E junction grading coefficient |
| me | (null) |
| tf | Ideal forward transit time |
| xtf | Coefficient for bias dependence of TF |
| vtf | Voltage giving VBC dependence of TF |
| itf | High current dependence of TF |
| ptf | Excess phase |
| cjc | Zero bias B-C depletion capacitance |
| vjc | B-C built in potential |
| pc | (null) |
| mjc | B-C junction grading coefficient |
| mc | (null) |
| xcjc | Fraction of B-C cap to internal base |
| tr | Ideal reverse transit time |
| cjs | Zero bias C-S capacitance |
| ccs | Zero bias C-S capacitance |
| vjs | Substrate junction built in potential |
| ps | (null) |
| mjs | Substrate junction grading coefficient |
| ms | (null) |
| xtb | Forward and reverse beta temp. exp. |
| eg | Energy gap for IS temp. dependency |
| xti | Temp. exponent for IS |
| fc | Forward bias junction fit parameter |
| tnom | Parameter measurement temperature |
| kf | Flicker Noise Coefficient |
| af | Flicker Noise Exponent |
| BJT - model parameters (output-only) |
|---|
| type | NPN or PNP |
| invearlyvoltf | Inverse early voltage:forward |
| invearlyvoltr | Inverse early voltage:reverse |
| invrollofff | Inverse roll off - forward |
| invrolloffr | Inverse roll off - reverse |
| collectorconduct | Collector conductance |
| emitterconduct | Emitter conductance |
| transtimevbcfact | Transit time VBC factor |
| excessphasefactor | Excess phase fact. |
| BSIM1 - instance parameters (input-only) |
|---|
| ic | Vector of DS,GS,BS initial voltages |
| BSIM1 - instance parameters (input-output) |
|---|
| l | Length |
| w | Width |
| ad | Drain area |
| as | Source area |
| pd | Drain perimeter |
| ps | Source perimeter |
| nrd | Number of squares in drain |
| nrs | Number of squares in source |
| off | Device is initially off |
| vds | Initial D-S voltage |
| vgs | Initial G-S voltage |
| vbs | Initial B-S voltage |
| BSIM1 - model parameters (input-only) |
|---|
| nmos | Flag to indicate NMOS |
| pmos | Flag to indicate PMOS |
| BSIM1 - model parameters (input-output) |
|---|
| vfb | Flat band voltage |
| lvfb | Length dependence of vfb
|
| wvfb | Width dependence of vfb |
| phi | Strong inversion surface potential |
| lphi | Length dependence of phi |
| wphi | Width dependence of phi |
| k1 | Bulk effect coefficient 1 |
| lk1 | Length dependence of k1 |
| wk1 | Width dependence of k1 |
| k2 | Bulk effect coefficient 2 |
| lk2 | Length dependence of k2 |
| wk2 | Width dependence of k2 |
| eta | VDS dependence of threshold voltage |
| leta | Length dependence of eta |
| weta | Width dependence of eta |
| x2e | VBS dependence of eta |
| lx2e | Length dependence of x2e |
| wx2e | Width dependence of x2e |
| x3e | VDS dependence of eta |
| lx3e | Length dependence of x3e |
| wx3e | Width dependence of x3e |
| dl | Channel length reduction in um |
| dw | Channel width reduction in um |
| muz | Zero field mobility at VDS=0 VGS=VTH |
| x2mz | VBS dependence of muz |
| lx2mz | Length dependence of x2mz |
| wx2mz | Width dependence of x2mz |
| mus | Mobility at VDS=VDD VGS=VTH, channel length modulation |
| lmus | Length dependence of mus |
| wmus | Width dependence of mus |
| x2ms | VBS dependence of mus |
| lx2ms | Length dependence of x2ms |
| wx2ms | Width dependence of x2ms |
| x3ms | VDS dependence of mus |
| lx3ms | Length dependence of x3ms |
| wx3ms | Width dependence of x3ms |
| u0 | VGS dependence of mobility |
| lu0 | Length dependence of u0 |
| wu0 | Width dependence of u0 |
| x2u0 | VBS dependence of u0 |
| lx2u0 | Length dependence of x2u0 |
| wx2u0 | Width dependence of x2u0 |
| u1 | VDS depence of mobility, velocity saturation |
| lu1 | Length dependence of u1 |
| wu1 | Width dependence of u1 |
| x2u1 | VBS depence of u1 |
| lx2u1 | Length depence of x2u1 |
| wx2u1 | Width depence of x2u1 |
| x3u1 | VDS depence of u1 |
| lx3u1 | Length dependence of x3u1 |
| wx3u1 | Width depence of x3u1 |
| n0 | Subthreshold slope |
| ln0 | Length dependence of n0 |
| wn0 | Width dependence of n0 |
| nb | VBS dependence of subthreshold slope |
| lnb | Length dependence of nb |
| wnb | Width dependence of nb |
| nd | VDS dependence of subthreshold slope |
| lnd | Length dependence of nd |
| wnd | Width dependence of nd |
| tox | Gate oxide thickness in um |
| temp | Temperature in degree Celcius |
| vdd | Supply voltage to specify mus |
| cgso | Gate source overlap capacitance per unit channel width(m) |
| cgdo | Gate drain overlap capacitance per unit channel width(m) |
| cgbo | Gate bulk overlap capacitance per unit channel length(m) |
| xpart | Flag for channel charge partitioning |
| rsh | Source drain diffusion sheet resistance in ohm per square |
| js | Source drain junction saturation current per unit area |
| pb | Source drain junction built in potential |
| mj | Source drain bottom junction capacitance grading coefficient |
| pbsw | Source drain side junction capacitance built in potential |
| mjsw | Source drain side junction capacitance grading coefficient |
| cj | Source drain bottom junction capacitance per unit area |
| cjsw | Source drain side junction capacitance per unit area |
| wdf | Default width of source drain diffusion in um |
| dell | Length reduction of source drain diffusion |
| BSIM2 - instance parameters (input-only) |
|---|
| ic | Vector of DS,GS,BS initial voltages |
| BSIM2 - instance parameters (input-output) |
|---|
| l | Length |
| w | Width |
| ad | Drain area |
| as | Source area |
| pd | Drain perimeter |
| ps | Source perimeter |
| nrd | Number of squares in drain |
| nrs | Number of squares in source |
| off | Device is initially off |
| vds | Initial D-S voltage |
| vgs | Initial G-S voltage |
| vbs | Initial B-S voltage |
| BSIM2 - model parameters (input-only) |
|---|
| nmos | Flag to indicate NMOS |
| pmos | Flag to indicate PMOS |
| BSIM2 - model parameters (input-output) |
|---|
| vfb | Flat band voltage |
| lvfb | Length dependence of vfb |
| wvfb | Width dependence of vfb |
| phi | Strong inversion surface potential |
| lphi | Length dependence of phi |
| wphi | Width dependence of phi |
| k1 | Bulk effect coefficient 1 |
| lk1 | Length dependence of k1 |
| wk1 | Width dependence of k1 |
| k2 | Bulk effect coefficient 2 |
| lk2 | Length dependence of k2 |
| wk2 | Width dependence of k2 |
| |eta0 | VDS dependence of threshold voltage at VDD=0 |
| leta0 | Length dependence of eta0 |
| weta0 | Width dependence of eta0 |
| etab | VBS dependence of eta |
| letab | Length dependence of etab |
| wetab | Width dependence of etab |
| dl | Channel length reduction in um |
| dw | Channel width reduction in um |
| mu0 | Low-field mobility, at VDS=0 VGS=VTH |
| mu0b | VBS dependence of low-field mobility |
| lmu0b | Length dependence of mu0b |
| wmu0b | Width dependence of mu0b |
| mus0 | Mobility at VDS=VDD VGS=VTH |
| lmus0 | Length dependence of mus0 |
| wmus0 | Width dependence of mus |
| musb | VBS dependence of mus |
| lmusb | Length dependence of musb |
| wmusb | Width dependence of musb |
| mu20 | VDS dependence of mu in tanh term |
| lmu20 | Length dependence of mu20 |
| wmu20 | Width dependence of mu20 |
| mu2b | VBS dependence of mu2 |
| lmu2b | Length dependence of mu2b |
| wmu2b | Width dependence of mu2b |
| mu2g | VGS dependence of mu2 |
| lmu2g | Length dependence of mu2g |
| wmu2g | Width dependence of mu2g |
| mu30 | VDS dependence of mu in linear term |
| lmu30 | Length dependence of mu30 |
| wmu30 | Width dependence of mu30 |
| mu3b | VBS dependence of mu3 |
| lmu3b | Length dependence of mu3b |
| wmu3b | Width dependence of mu3b |
| mu3g | VGS dependence of mu3 |
| lmu3g | Length dependence of mu3g |
| wmu3g | Width dependence of mu3g |
| mu40 | VDS dependence of mu in linear term |
| lmu40 | Length dependence of mu40 |
| wmu40 | Width dependence of mu40 |
| mu4b | VBS dependence of mu4 |
| lmu4b | Length dependence of mu4b |
| wmu4b | Width dependence of mu4b |
| mu4g | VGS dependence of mu4 |
| lmu4g | Length dependence of mu4g |
| wmu4g | Width dependence of mu4g |
| ua0 | Linear VGS dependence of mobility |
| lua0 | Length dependence of ua0 |
| wua0 | Width dependence of ua0 |
| uab | VBS dependence of ua |
| luab | Length dependence of uab |
| wuab | Width dependence of uab |
| ub0 | Quadratic VGS dependence of mobility |
| lub0 | Length dependence of ub0 |
| wub0 | Width dependence of ub0 |
| ubb | VBS dependence of ub |
| lubb | Length dependence of ubb |
| wubb | Width dependence of ubb |
| u10 | VDS depence of mobility |
| lu10 | Length dependence of u10 |
| wu10 | Width dependence of u10 |
| u1b | VBS depence of u1 |
| lu1b | Length depence of u1b |
| wu1b | Width depence of u1b |
| u1d | VDS depence of u1 |
| lu1d | Length depence of u1d |
| wu1d | Width depence of u1d |
| n0 | Subthreshold slope at VDS=0 VBS=0 |
| ln0 | Length dependence of n0 |
| wn0 | Width dependence of n0 |
| nb | VBS dependence of n |
| lnb | Length dependence of nb |
| wnb | Width dependence of nb |
| nd | VDS dependence of n |
| lnd | Length dependence of nd |
| wnd | Width dependence of nd |
| vof0 | Threshold voltage offset AT VDS=0 VBS=0 |
| lvof0 | Length dependence of vof0 |
| wvof0 | Width dependence of vof0 |
| vofb | VBS dependence of vof |
| lvofb | Length dependence of vofb |
| wvofb | Width dependence of vofb |
| vofd | VDS dependence of vof |
| lvofd | Length dependence of vofd |
| wvofd | Width dependence of vofd |
| ai0 | Pre-factor of hot-electron effect. |
| lai0 | Length dependence of ai0 |
| wai0 | Width dependence of ai0 |
| aib | VBS dependence of ai |
| laib | Length dependence of aib |
| waib | Width dependence of aib |
| bi0 | Exponential factor of hot-electron effect. |
| lbi0 | Length dependence of bi0 |
| wbi0 | Width dependence of bi0 |
| bib | VBS dependence of bi |
| lbib | Length dependence of bib |
| wbib | Width dependence of bib |
| vghigh | Upper bound of the cubic spline function. |
| lvghigh | Length dependence of vghigh |
| wvghigh | Width dependence of vghigh |
| vglow | Lower bound of the cubic spline function. |
| lvglow | Length dependence of vglow |
| wvglow | Width dependence of vglow |
| tox | Gate oxide thickness in um |
| temp | Temperature in degree Celcius |
| vdd | Maximum Vds |
| vgg | Maximum Vgs |
| vbb | Maximum Vbs |
| cgso | Gate source overlap capacitance per unit channel width(m) |
| cgdo | Gate drain overlap capacitance per unit channel width(m) |
| cgbo | Gate bulk overlap capacitance per unit channel length(m) |
| xpart | Flag for channel charge partitioning |
| rsh | Source drain diffusion sheet resistance in ohm per square |
| js | Source drain junction saturation current per unit area |
| pb | Source drain junction built in potential |
| mj | Source drain bottom junction capacitance grading coefficient |
| pbsw | Source drain side junction capacitance built in potential |
| mjsw | Source drain side junction capacitance grading coefficient |
| cj | Source drain bottom junction capacitance per unit area |
| cjsw | Source drain side junction capacitance per unit area |
| wdf | Default width of source drain diffusion in um |
| dell | Length reduction of source drain diffusion |
| JFET - instance parameters (input-output) |
|---|
| off | Device initially off |
| ic | Initial VDS,VGS vector |
| area | Area factor |
| ic-vds | Initial D-S voltage |
| ic-vgs | Initial G-S volrage |
| temp | Instance temperature |
| JFET - instance parameters (output-only) |
|---|
| drain-node | Number of drain node |
| gate-node | Number of gate node |
| source-node | Number of source node |
| drain-prime-node | Internal drain node |
| source-prime-nodeInternal | source node |
| vgs | Voltage G-S |
| vgd | Voltage G-D |
| ig | Current at gate node |
| id | Current at drain node |
| is | Source current |
| igd | Current G-D |
| gm | Transconductance |
| gds | Conductance D-S |
| ggs | Conductance G-S |
| ggd | Conductance G-D |
| qgs | Charge storage G-S junction |
| qgd | Charge storage G-D junction |
| cqgs | Capacitance due to charge storage G-S junction |
| cqgd | Capacitance due to charge storage G-D junction |
| p | Power dissipated by the JFET |
| JFET - model parameters (output-only) |
|---|
| njf | N type JFET model |
| pjf | P type JFET model |
| vt0 | Threshold voltage |
| vto | (null) |
| beta | Transconductance parameter |
| lambda | Channel length modulation param. |
| rd | Drain ohmic resistance |
| rs | Source ohmic resistance |
| cgs | G-S junction capactance |
| cgd | G-D junction cap |
| pb | Gate junction potential |
| is | Gate junction saturation current |
| fc | Forward bias junction fit parm. |
| b | Doping tail parameter |
| tnom | parameter measurement temperature |
| kf | Flicker Noise Coefficient |
| af | Flicker Noise Exponent |
| JFET - model parameters (output-only) |
|---|
| type | N-type or P-type JFET model |
| gd | Drain conductance |
| gs | Source conductance |
| LTRA - instance parameters (input-only) |
|---|
| ic | Initial condition vector:v1,i1,v2,i2 |
| LTRA - instance parameters (input-output) |
|---|
| v1 | Initial voltage at end 1 |
| v2 | Initial voltage at end 2 |
| i1 | Initial current at end 1 |
| i2 | Initial current at end 2 |
| LTRA - instance parameters (output-only) |
|---|
| pos_node1 | Positive node of end 1 of t-line |
| neg_node1 | Negative node of end 1 of t.line |
| pos_node2 | Positive node of end 2 of t-line |
| neg_node2 | Negative node of end 2 of t-line |
| LTRA - model parameters (input-output) |
|---|
| ltra | LTRA model |
| r | Resistance per metre |
| l | Inductance per metre |
| g | (null) |
| c | Capacitance per metre |
| len | length of line |
| nocontrol | No timestep control |
| steplimit | always limit timestep to 0.8*(delay of line) |
| nosteplimit | don't always limit timestep to 0.8*(delay of line) |
| lininterp | use linear interpolation |
| quadinterp | use quadratic interpolation |
| mixedinterp | use linear interpolation if quadratic results look unacceptable |
| truncnr | use N-R iterations for step calculation in LTRAtrunc |
| truncdontcut | don't limit timestep to keep impulse response calculation errors low |
| compactrel | special reltol for straight line checking |
| compactabs | special abstol for straight line checking |
| LTRA - model parameters (output-only) |
|---|
| rel | Rel. rate of change of deriv. for bkpt |
| abs | Abs. rate of change of deriv. for bkpt |
| MES - instance parameters (input-output) |
|---|
| area | Area factor |
| icvds | Initial D-S voltage |
| icvgs | Initial G-S voltage |
| MES - instance parameters (output-only) |
|---|
| off | Device initially off |
| dnode | Number of drain node |
| gnode | Number of gate node |
| snode | Number of source node |
| dprimenode | Number of internal drain node |
| sprimenode | Number of internal source node |
| vgs | Gate-Source voltage |
| vgd | Gate-Drain voltage |
| cg | Gate capacitance |
| cd | Drain capacitance |
| cgd | Gate-Drain capacitance |
| gm | Transconductance |
| gds | Drain-Source conductance |
| ggs | Gate-Source conductance |
| ggd | Gate-Drain conductance |
| cqgs | Capacitance due to gate-source charge storage |
| cqgd | Capacitance due to gate-drain charge storage |
| qgs | Gate-Source charge storage |
| qgd | Gate-Drain charge storage |
| is | Source current |
| p | Power dissipated by the mesfet |
| MES - model parameters (input-only) |
|---|
| nmf | N type MESfet model |
| pmf | P type MESfet model |
| MES - model parameters (input-output) |
|---|
| vt0 | Pinch-off voltage |
| vto | (null) |
| alpha | Saturation voltage parameter |
| beta | Transconductance parameter |
| lambda | Channel length modulation parm. |
| b | Doping tail extending parameter |
| rd | Drain ohmic resistance |
| rs | Source ohmic resistance |
| cgs | G-S junction capacitance |
| cgd | G-D junction capacitance |
| pb | Gate junction potential |
| is | Junction saturation current |
| fc | Forward bias junction fit parm. |
| kf | Flicker noise coefficient |
| af | Flicker noise exponent |
| MES - model parameters (output-only) |
|---|
| type | N-type or P-type MESfet model |
| gd | Drain conductance |
| gs | Source conductance |
| depl_cap | Depletion capacitance |
| vcrit | Critical voltage |
| Mos1 - instance parameters (input-only) |
|---|
| off | Device initially off |
| ic | Vector of D-S, G-S, B-S voltages |
| Mos1 - instance parameters (input-output) |
|---|
| l | Length |
| w | Width |
| ad | Drain area |
| as | Source area |
| pd | Drain perimeter |
| ps | Source perimeter |
| nrd | Drain squares |
| nrs | Source squares |
| icvds | Initial D-S voltage |
| icvgs | Initial G-S voltage |
| icvbs | Initial B-S voltage |
| temp | Instance temperature |
| Mos1 - instance parameters (output-only) |
|---|
| id | Drain current |
| is | Source current |
| ig | Gate current |
| ib | Bulk current |
| ibd | B-D junction current |
| ibs | B-S junction current |
| vgs | Gate-Source voltage |
| vds | Drain-Source voltage |
| vbs | Bulk-Source voltage |
| vbd | Bulk-Drain voltage |
| dnode | Number of the drain node |
| gnode | Number of the gate node |
| snode | Number of the source node |
| bnode | Number of the node |
| dnodeprime | Number of int. drain node |
| snodeprime | Number of int. source node |
| von | |
| vdsat | Saturation drain voltage |
| sourcevcrit | Critical source voltage |
| drainvcrit | Critical drain voltage |
| rs | Source resistance |
| sourceconductance | Conductance of source |
| rd | Drain conductance |
| drainconductance | Conductance of drain |
| gm | Transconductance |
| cbs | Bulk-Source capacitance |
| gmb | Bulk-Source transconductance |
| gmbs | |
| gbd | Bulk-Drain conductance |
| gbs | Bulk-Source conductance |
| cbd | Bulk-Drain capacitance |
| cbs | Bulk-Source capacitance |
| cgs | Gate-Source capacitance |
| cgd | Gate-Drain capacitance |
| cgb | Gate-Bulk capacitance |
| cqgs | Capacitance due to gate-source charge storage |
| cqgd | Capacitance due to gate-drain charge storage |
| cqgb | Capacitance due to gate-bulk charge storage |
| cqbd | Capacitance due to bulk-drain charge storage |
| cqbs | Capacitance due to bulk-source charge storage |
| cbd0 | Zero-Bias B-D junction capacitance |
| cbdsw0 | |
| cbs0 | Zero-Bias B-S junction capacitance |
| cbssw0 | |
| qgs | Gate-Source charge storage |
| qgd | Gate-Drain charge storage |
| qgb | Gate-Bulk charge storage |
| qbd | Bulk-Drain charge storage |
| qbs | Bulk-Source charge storage |
| p | Instaneous power |
| Mos1 - model parameters (input-only) |
|---|
| nmos | N type MOSfet model |
| pmos | P type MOSfet model |
| Mos1 - model parameters (input-output) |
|---|
| vto | Threshold voltage |
| vt0 | (null) |
| kp | Transconductance parameter |
| gamma | Bulk threshold parameter |
| phi | Surface potential |
| lambda | Channel length modulation |
| rd | Drain ohmic resistance |
| rs | Source ohmic resistance |
| cbd | B-D junction capacitance |
| cbs | B-S junction capacitance |
| is | Bulk junction sat. current |
| pb | Bulk junction potential |
| cgso | Gate-source overlap cap. |
| cgdo | Gate-drain overlap cap. |
| cgbo | Gate-bulk overlap cap. |
| rsh | Sheet resistance |
| cj | Bottom junction cap per area |
| mj | Bottom grading coefficient |
| cjsw | Side junction cap per area |
| mjsw | Side grading coefficient |
| js | Bulk jct. sat. current density |
| tox | Oxide thickness |
| ld | Lateral diffusion |
| u0 | Surface mobility |
| uo | (null) |
| fc | Forward bias jct. fit parm. |
| nsub | Substrate doping |
| tpg | Gate type |
| nss | Surface state density |
| tnom | Parameter measurement temperature |
| kf | Flicker noise coefficient |
| af | Flicker noise exponent |
| Mos1 - model parameters (output-only) |
|---|
| type | N-channel or P-channel MOS |
| Mos2 - instance parameters (input-only) |
|---|
| off | Device initially off |
| ic | Vector of D-S, G-S, B-S voltages |
| Mos2 - instance parameters (input-output) |
|---|
| l | Length |
| w | Width |
| ad | Drain area |
| as | Source area |
| pd | Drain perimeter |
| ps | Source perimeter |
| nrd | Drain squares |
| nrs | Source squares |
| icvds | Initial D-S voltage |
| icvgs | Initial G-S voltage |
| icvbs | Initial B-S voltage |
| temp | Instance operating temperature |
| Mos2 - instance parameters (output-only) |
|---|
| id | Drain current |
| cd | |
| ibd | B-D junction current |
| ibs | B-S junction current |
| drainvcrit | Critical drain voltage |
| is | Source current |
| ig | Gate current |
| ib | Bulk current |
| vgs | Gate-Source voltage |
| vds | Drain-Source voltage |
| vbs | Bulk-Source voltage |
| vbd | Bulk-Drain voltage |
| dnode | Number of drain node |
| gnode | Number of gate node |
| snode | Number of source node |
| bnode | Number of bulk node |
| dnodeprime | Number of internal drain node |
| snodeprime | Number of internal source node |
| von | |
| vdsat | Saturation drain voltage |
| sourcevcrit | Critical source voltage |
| drainvcrit | Critical drain voltage |
| rs | Source resistance |
| sourceconductanceSource | conductance |
| rd | Drain resistance |
| drainconductance | Drain conductance |
| gm | Transconductance |
| gds | Drain-Source conductance |
| gmb | Bulk-Source transconductance |
| gmbs | |
| gbd | Bulk-Drain conductance |
| gbs | Bulk-Source conductance |
| cbd | Bulk-Drain capacitance |
| cbs | Bulk-Source capacitance |
| cgs | Gate-Source capacitance |
| cgd | Gate-Drain capacitance |
| cgb | Gate-Bulk capacitance |
| cbd0 | Zero-Bias B-D junction capacitance |
| cbdsw0 | |
| cbs0 | Zero-Bias B-S junction capacitance |
| cbssw0 | |
| cqgs | Capacitance due to gate-source charge storage |
| cqgd | Capacitance due to gate-drain charge storage |
| cqgb | Capacitance due to gate-bulk charge storage |
| cqbd | Capacitance due to bulk-drain charge storage |
| cqbs | Capacitance due to bulk-source charge storage |
| qgs | Gate-Source charge storage |
| qgd | Gate-Drain charge storage |
| qgb | Gate-Bulk charge storage |
| qbd | Bulk-Drain charge storage |
| qbs | Bulk-Source charge storage |
| p | Instantaneous power |
| Mos2 - model parameters (input-only) |
|---|
| nmos | N type MOSfet model |
| pmos | P type MOSfet model |
| Mos2 - model parameters (input-output) |
|---|
| vto | Threshold voltage |
| vt0 | (null) |
| kp | Transconductance parameter |
| gamma | Bulk threshold parameter |
| phi | Surface potential |
| lambda | Channel length modulation |
| rd | Drain ohmic resistance |
| rs | Source ohmic resistance |
| cbd | B-D junction capacitance |
| cbs | B-S junction capacitance |
| is | Bulk junction sat. current |
| pb | Bulk junction potential |
| cgso | Gate-source overlap cap. |
| cgdo | Gate-drain overlap cap. |
| cgbo | Gate-bulk overlap cap. |
| rsh | Sheet resistance |
| cj | Bottom junction cap per area |
| mj | Bottom grading coefficient |
| cjsw | Side junction cap per area |
| mjsw | Side grading coefficient |
| js | Bulk jct. sat. current density |
| tox | Oxide thickness |
| ld | Lateral diffusion |
| u0 | Surface mobility |
| uo | (null) |
| fc | Forward bias jct. fit parm. |
| nsub | Substrate doping |
| tpg | Gate type |
| nss | Surface state density |
| delta | Width effect on threshold |
| uexp | Crit. field exp for mob. deg. |
| ucrit | Crit. field for mob. degradation |
| vmax | Maximum carrier drift velocity |
| xj | Junction depth |
| neff | Total channel charge coeff. |
| nfs | Fast surface state density |
| tnom | Parameter measurement temperature |
| kf | Flicker noise coefficient |
| af | Flicker noise exponent |
| Mos2 - model parameters (output-only) |
|---|
| type | N-channel or P-channel MOS |
| Mos3 - instance parameters (input-only) |
|---|
| off | Device initially off |
| Mos3 - instance parameters (input-output) |
|---|
| l | Length |
| w | Width |
| ad | Drain area |
| as | Source area |
| pd | Drain perimeter |
| ps | Source perimeter |
| nrd | Drain squares |
| nrs | Source squares |
| icvds | Initial D-S voltage |
| icvgs | Initial G-S voltage |
| icvbs | Initial B-S voltage |
| ic | Vector of D-S, G-S, B-S voltages |
| temp | Instance operating temperature |
| Mos3 - instance parameters (output-only) |
|---|
| id | Drain current |
| cd | Drain current |
| ibd | B-D junction current |
| ibs | B-S junction current |
| is | Source current |
| ig | Gate current |
| ib | Bulk current |
| vgs | Gate-Source voltage |
| vds | Drain-Source voltage |
| vbs | Bulk-Source voltage |
| vbd | Bulk-Drain voltage |
| dnode | Number of drain node |
| gnode | Number of gate node |
| snode | Number of source node |
| bnode | Number of bulk node |
| dnodeprime | Number of internal drain node |
| snodeprime | Number of internal source node |
| von | Turn-on voltage |
| vdsat | Saturation drain voltage |
| sourcevcrit | Critical source voltage |
| drainvcrit | Critical drain voltage |
| rs | Source resistance |
| sourceconductanceSource | conductance |
| rd | Drain resistance |
| drainconductance | Drain conductance |
| gm | Transconductance |
| gds | Drain-Source conductance |
| gmb | Bulk-Source transconductance |
| gmbs | Bulk-Source transconductance |
| gbd | Bulk-Drain conductance |
| gbs | Bulk-Source conductance |
| cbd | Bulk-Drain capacitance |
| cbs | Bulk-Source capacitance |
| cgs | Gate-Source capacitance |
| cgd | Gate-Drain capacitance |
| cgb | Gate-Bulk capacitance |
| cqgs | Capacitance due to gate-source charge storage |
| cqgd | Capacitance due to gate-drain charge storage |
| cqgb | Capacitance due to gate-bulk charge storage |
| cqbd | Capacitance due to bulk-drain charge storage |
| cqbs | Capacitance due to bulk-source charge storage |
| cbd0 | Zero-Bias B-D junction capacitance |
| cbdsw0 | Zero-Bias B-D sidewall capacitance |
| cbs0 | Zero-Bias B-S junction capacitance |
| cbssw0 | Zero-Bias B-S sidewall capacitance |
| qbs | Bulk-Source charge storage |
| qgs | Gate-Source charge storage |
| qgd | Gate-Drain charge storage |
| qgb | Gate-Bulk charge storage |
| qbd | Bulk-Drain charge storage |
| p | Instantaneous power |
| Mos3 - model parameters (input-only) |
|---|
| nmos | N type MOSfet model |
| pmos | P type MOSfet model |
| Mos3 - model parameters (input-output) |
|---|
| vto | Threshold voltage |
| vt0 | (null) |
| kp | Transconductance parameter |
| gamma | Bulk threshold parameter |
| phi | Surface potential |
| rd | Drain ohmic resistance |
| rs | Source ohmic resistance |
| cbd | B-D junction capacitance |
| cbs | B-S junction capacitance |
| is | Bulk junction sat. current |
| pb | Bulk junction potential |
| cgso | Gate-source overlap cap. |
| cgdo | Gate-drain overlap cap. |
| cgbo | Gate-bulk overlap cap. |
| rsh | Sheet resistance |
| cj | Bottom junction cap per area |
| mj | Bottom grading coefficient |
| cjsw | Side junction cap per area |
| mjsw | Side grading coefficient |
| js | Bulk jct. sat. current density |
| tox | Oxide thickness |
| ld | Lateral diffusion |
| u0 | Surface mobility |
| uo | (null) |
| fc | Forward bias jct. fit parm. |
| nsub | Substrate doping |
| tpg | Gate type |
| nss | Surface state density |
| vmax | Maximum carrier drift velocity |
| xj | Junction depth |
| nfs | Fast surface state density |
| xd | Depletion layer width |
| alpha | Alpha |
| eta | Vds dependence of threshold voltage |
| delta | Width effect on threshold |
| input_delta | (null) |
| theta | Vgs dependence on mobility |
| kappa | Kappa |
| tnom | Parameter measurement temperature |
| kf | Flicker noise coefficient |
| af | Flicker noise exponent |
| Mos3 - model parameters (output-only) |
|---|
| type | N-channel or P-channel MOS |
| Mos6 - instance parameters (input-only) |
|---|
| off | Device initially off |
| ic | Vector of D-S, G-S, B-S voltages |
| Mos6 - instance parameters (input-output) |
|---|
| l | Length |
| w | Width |
| ad | Drain area |
| as | Source area |
| pd | Drain perimeter |
| ps | Source perimeter |
| nrd | Drain squares |
| nrs | Source squares |
| icvds | Initial D-S voltage |
| icvgs | Initial G-S voltage |
| icvbs | Initial B-S voltage |
| temp | Instance temperature |
| Mos6 - instance parameters (output-only) |
|---|
| id | Drain current |
| cd | Drain current |
| is | Source current |
| ig | Gate current |
| ib | Bulk current |
| ibs | B-S junction capacitance |
| ibd | B-D junction capacitance |
| vgs | Gate-Source voltage |
| vds | Drain-Source voltage |
| vbs | Bulk-Source voltage |
| vbd | Bulk-Drain voltage |
| dnode | Number of the drain node |
| gnode | Number of the gate node |
| snode | Number of the source node |
| bnode | Number of the node |
| dnodeprime | Number of int. drain node |
| snodeprime | Number of int. source node |
| rs | Source resistance |
| sourceconductanceSource | conductance |
| rd | Drain resistance |
| drainconductance | Drain conductance |
| von | Turn-on voltage |
| vdsat | Saturation drain voltage |
| sourcevcrit | Critical source voltage |
| drainvcrit | Critical drain voltage |
| gmbs | Bulk-Source transconductance |
| gm | Transconductance |
| gds | Drain-Source conductance |
| gbd | Bulk-Drain conductance |
| gbs | Bulk-Source conductance |
| cgs | Gate-Source capacitance |
| cgd | Gate-Drain capacitance |
| cgb | Gate-Bulk capacitance |
| cbd | Bulk-Drain capacitance |
| cbs | Bulk-Source capacitance |
| cbd0 | Zero-Bias B-D junction capacitance |
| cbdsw0 | |
| cbs0 | Zero-Bias B-S junction capacitance |
| cbssw0 | |
| cqgs | Capacitance due to gate-source charge storage |
| cqgd | Capacitance due to gate-drain charge storage |
| cqgb | Capacitance due to gate-bulk charge storage |
| cqbd | Capacitance due to bulk-drain charge storage |
| cqbs | Capacitance due to bulk-source charge storage |
| qgs | Gate-Source charge storage |
| qgd | Gate-Drain charge storage |
| qgb | Gate-Bulk charge storage |
| qbd | Bulk-Drain charge storage |
| qbs | Bulk-Source charge storage |
| p | Instaneous power |
| Mos6 - model parameters (input-only) |
|---|
| nmos | N type MOSfet model |
| pmos | P type MOSfet model |
| Mos6 - model parameters (input-output) |
|---|
| vto | Threshold voltage |
| vt0 | (null) |
| kv | Saturation voltage factor |
| nv | Saturation voltage coeff. |
| kc | Saturation current factor |
| nc | Saturation current coeff. |
| nvth | Threshold voltage coeff. |
| ps | Sat. current modification par. |
| gamma | Bulk threshold parameter |
| gamma1 | Bulk threshold parameter 1 |
| sigma | Static feedback effect par. |
| phi | Surface potential |
| lambda | Channel length modulation param. |
| lambda0 | Channel length modulation param. 0 |
| lambda1 | Channel length modulation param. 1 |
| rd | Drain ohmic resistance |
| rs | Source ohmic resistance |
| cbd | B-D junction capacitance |
| cbs | B-S junction capacitance |
| is | Bulk junction sat. current |
| pb | Bulk junction potential |
| cgso | Gate-source overlap cap. |
| cgdo | Gate-drain overlap cap. |
| cgbo | Gate-bulk overlap cap. |
| rsh | Sheet resistance |
| cj | Bottom junction cap per area |
| mj | Bottom grading coefficient |
| cjsw | Side junction cap per area |
| mjsw | Side grading coefficient |
| js | Bulk jct. sat. current density |
| ld | Lateral diffusion |
| tox | Oxide thickness |
| u0 | Surface mobility |
| uo | (null) |
| fc | Forward bias jct. fit parm. |
| tpg | Gate type |
| nsub | Substrate doping |
| nss | Surface state density |
| tnom | Parameter measurement temperature |
| Mos6 - model parameters (output-only) |
|---|
| type | N-channel or P-channel MOS |
