Network objectives
- Understand and overcome the technological problems associated with
ion implantation, specifically, to suppress Transient Enhanced
Diffusion (TED) and to develop effective methods of controlling
the carrier lifetime in semiconductors using ion implantation;
- Improve the radiation tolerance of silicon devices used in high
energy particle physics and space applications.
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Consortium contribution
We are performing ab initio simulations on defects in
irradiated and implanted silicon. Of special interest here are the
electrical levels arising from relevant defects like aggregates of
vacancies or self-interstitials, and also reactions between these
and impurities in Si.
The structural and electrical
properties are calculated using spin-polarised local density
functional theory using clusters and supercells.
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Related events
- Hydrogen'99 - Workshop on Hydrogen in semiconductors, 15-16th
April, 1999 Exeter, UK
- 1st ENDEASD Workshop & Summer School, 17-23rd April, 1999,
Santorini, Greece
- Investigations of Defects in Silicon using First Principles Methods
R. Jones, A. Resende, S. Öberg and
P. R. Briddon (PDF)
- Self-Interstitial Clusters in Silicon
B. J. Coomer, J. P. Goss, A. Resende,
R. Jones, S. Öberg and
P. R. Briddon (PDF)
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Other network partners
-
SIRE, Brunel
Physics Department,
London - UK
-
HEPG, Imperial College, London - UK
- IFA,
University of Aarhus - Denmark
- IMEC, Leuven - Belgium
- Solid State
Electronics, KTH -
Royal Institute of Technology, Stockholm - Sweden
- CNR-IMETEM, Catania - Italy
- INFN, Pisa - Italy
- Demokritos, Institute of
Nuclear Physics, Athens - Greece
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