Physical Review Letters, 78(1), 74-77 (1997)

Di-carbon defects in annealed highly carbon doped GaAs

J. Wagner (a), R. C. Newman (b), B. R. Davidson (b), S. P. Westwater (c), T. J. Bullough (c), T. B. Joyce (c), C. D. Latham (d), R. Jones (d), S. Öberg (e)

(a) Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-71908 Freiburg, Federal Republic of Germany

(b) Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College of Science, Technology and Medicine, London SW7 2BZ, United Kingdom

(c) Department of Materials Science and Engineering, P.O. Box 147, Liverpool University, L69 3BX, United Kingdom

(d) School of Physics, University of Exeter, Exeter, EX4 4QL United Kingdom

(e) Department of Mathematics, University of Luleå, Luleå, SE-97187, Sweden.

(Received 9th July 1996)

Abstract

Formation of bonded di-carbon C-C centers is deduced by the observation of Raman lines at 1741, 1708 and 1674 cm^-1 in GaAs co-doped with ¹²C and ¹³C after annealing at 850 °C with concomitant loss of vibrational of vibrational scattering from C_As.  The frequencies agree with results of ab initio theory for a split C-C interstitial (deep donor) formed by the trapping of a mobile interstitial C (displaced C_As) atom by an undisplaced C_As acceptor.  Other mechanisms of carrier loss are inferred since a weaker Raman triplet is detected at 1859, 1824 and 1788 cm^-1 from a different C-C complex.

PACS: 61.72.Vv, 61.72.Ji, 63.20.Pw, 78.30.Fs

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