Theoretical evidence concerning mixed dimer growth on the Si(001)(2x1)-Ge Surface
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The growth of Ge upon the Si(001)(2x1) surface is of profound technological importance. Desirable properties of proposed combined Si/Ge devices have led to significant experimental and theoretical efforts to understand the process of Ge adsorption upon this surface. However, the initial stages of Ge growth on Si(001)(2x1) are still subject to considerable discussion, with various unresolved claims concerning different local geometry and bonding properties highlighting the substantial disagreement between several experimental and theoretical groups.
We have investigated several possible structures for Ge adsorbed onto the Si(001)(2x1) surface, allowing diffusion up to the second layer. Dark circles represent Ge atoms, while light circles represent Si atoms.
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