Çakmak

Theoretical Physics
Çakmak

Mehmet ÇAKMAK

School of Physics
University of Exeter
Stocker Road
Exeter
EX4 4QL
UK


e-mail cakmak@excc.ex.ac.uk
Telephone (Exeter) 264198
Dept. Office 264151
Fax 264111

The dialling code for Exeter is 01392 (from UK), +44 1392 (international).


My research subject is theoretical studies of structural and electronic properties
of overlayers on semiconductor surfaces

  • In particular, I have been working on S and H2S-molecule adsorbed on the InP(110), GaAs(110), GaP(110), Si(001) and Ge(001) surfaces. ( H2 S-Si(001)-(1x2))
  • I have been working on disilane and digermane on the Si(001) and Ge(001) surfaces. Surface processes during chemical vapor deposition and the atomic-layer epitaxy of group-IV elements currently have received extensive interest. Although this process is most important for the microelectronics industry, a detailed theoretical understanding of these surfaces has not been investigated.
  • I am using an ab initio pseudopotential LDA code developed by my supervisor Dr. G.P. Srivastava.

    Publications...

    14-M. Çakmak and G.P. Srivastava, Desorption of S, Se and Te from the Si(001) surface, to be submitted Eur. Phys. Lett. (1999). 13-M. Çakmak, S.C.A. Gay, and G.P. Srivastava Adsorption of GeH2 on the Si(001) surface, to be submitted Surf. Sci (1999).

    12-S.C.A. Gay, M. Çakmak and G.P. Srivastava, Comparative study of Bi overlayers on the III-Sb(110)-(1x1) surfaces, submitted to Surf. Sci (1999). 11-M. Çakmak, S.C.A. Gay and G.P. Srivastava, Structure and energetics of segregated and nonsegregated H:Ge(001)/Si and Cl:Ge(001)/Si, submitted to Surf. Sci (1999). 10-M. Çakmak and G.P. Srivastava, Dissociative adsorption of Si2H6 on the Si(001) surface, submitted to Phys. Rev. B (1999).

    9-M. Çakmak and G.P. Srivastava, Adsorption of partially and fully dissociated H2S molecule on the Si(001) and Ge(001) surfaces, Phys. Rev. B 60, 5497 (1999). (Abstract) 8-M. Çakmak and G.P. Srivastava, Ab initio study of the adsorption of H2S onto the Si(001) surface, Sur. Sci. 433, 420 (1999). 7- M. Çakmak and G.P. Srivastava , Adsorption and desorption of S on and off Si(001) studied by Ab initio Density Functional Theory, J. Appl. Phys. 84, 6070 (1998). (Abstract) 6- M. Çakmak and G.P. Srivastava , Ab initio study of atomic geometry, electronic states and bonding for H2S-adsorption on III-V(110)-(1x1) surfaces, Phys. Rev. B 57, 4486 (1998). (Abstract) 5-M. Çakmak and G.P. Srivastava, Theoretical study of the GaAs(110)-(1x1)-H2S surface, Sur. Sci., 404, 658 (1998). 4-M. Çakmak and G.P. Srivastava, An ab initio calculation of the adsorption of H2S onto InP(110)-(1x1) surface, Appl. Sur. Sci. 123/124, 52 (1998). 3-H. M. Tutuncu, M. Çakmak and G.P. Srivastava, Structural, electronic and vibrational properties of the InSb(110) surface, Appl. Sur. Sci. 123/124, 146 (1998). 2-M. Çakmak and G.P. Srivastava, Calculation of atomic geometry, electronic states and bonding for the S-deposited InP(110) surface, Phys. Rev. B 56, 1928 (1997). (Abstract) 1-M. Çakmak and G.P. Srivastava, A theoretical study of sulphur adsorption on InP(110), Sur. Sci. 377, 592 (1997).



    Should you like a reprint or pre-print of any or all of these then I would be delighted to post them to you.


    cakmak@excc.ex.ac.uk

    Would you like to see My PhD thesis?

    (PhD Thesis)




    G.P. Srivastava (Group Page)....

    Theoretical Physics Page.
    (Or up to the Exeter)


    Personally...

    my Personal Home Page (on a different server)......under construction...!

    Gazi University (on a different server)




    Mehmet Çakmak <cakmak@excc.ex.ac.uk>
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    Last modified: Sun Sep 18 17:11:18 BST 1999